IXBH16N170

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = 1700V IC90 = 16A VCE(sat) ≤ 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 16 A ICM TC = 25°C, 1ms 120 A SSOA VGE = 15V, TVJ = 125°C, RG = 22Ω ICM = 40 A (RBSOA) Clamped inductive load VCES ≤ 1350 V PC TC = 25°C 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. TJ TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-247) Weight TO-247 TO-268 6 4 g g G C C (TAB) E TO-268 (IXBT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z z z High blocking voltage International standard packages Low conduction losses Advantages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 16A, VGE = 15V, Note 1 V 5.5 © 2008 IXYS CORPORATION, All rights reserved V 50 μA 2 mA TJ = 125°C TJ = 125°C z 3.2 ±100 nA 3.3 V Low gate drive requirement High power density Applications: z z z z z Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) Laser generator Capacitor discharge circuit AC switches V DS98657B(10/08) IXBH16N170 IXBT16N170 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfS 8.5 IC = 16A, VCE = 10V, Note 1 TO-247 (IXBH) Outline 14 S 1960 pF 85 pF Cres 24 pF Qg 72 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 12 nC Qgc 25 nC td(on) 38 ns 101 ns 125 ns 480 ns tr td(off) tf td(on) IC = 16A, VGE = 15V, VCE = 0.5 • VCES Resistive Switching times, TJ = 25°C IC = 16A, VGE = 15V VCE = 850V, RG = 22Ω 37 ns tr Resistive Switching times, TJ = 125°C 183 ns td(off) IC = 16A, VGE = 15V 235 ns VCE = 850V, RG = 22Ω 705 ns tf RthJC 0.50 RthCS °C/W ° C/W 0.25 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXBT) Outline Reverse Diode Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VF IF = 16A, VGE = 0V 2.6 trr IF = 8A, VGE = 0V, -diF/dt = 100A/μs IRM VR = 100V, VGE = 0V V 1.32 μs 26 A Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBH16N170 IXBT16N170 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 140 32 VGE = 15V VGE = 15V 13V 11V 28 120 13V 100 IC - Amperes IC - Amperes 24 20 9V 16 12 7V 60 9V 40 8 7V 20 4 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 3 6 9 12 15 18 24 VCE - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 27 30 1.7 VGE = 15V 13V 11V 28 VGE = 15V 1.6 1.5 20 VCE(sat) - Normalized 24 9V 16 7V 12 8 I C = 32A 1.4 1.3 1.2 I C = 16A 1.1 1.0 0.9 I 0.8 4 5V C = 8A 0.7 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 125 150 50 6.5 TJ = - 40ºC 25ºC 125ºC 45 TJ = 25ºC 6.0 40 5.5 I C 35 = 32A IC - Amperes 5.0 VCE - Volts 21 VCE - Volts 32 IC - Amperes 11V 80 4.5 4.0 3.5 16A 30 25 20 15 3.0 10 2.5 8A 5 2.0 0 1.5 5 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 IXBH16N170 IXBT16N170 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 50 24 TJ = - 40ºC 22 45 20 40 35 25ºC 16 IF - Amperes g f s - Siemens 18 14 125ºC 12 10 8 30 25 20 15 6 TJ = 125ºC 10 4 TJ = 25ºC 5 2 0 0 0 5 10 15 20 25 30 35 40 45 50 0.6 55 0.8 1.0 1.2 1.4 1.8 2.0 2.2 2.4 2.6 Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 16 f = 1 MHz VCE = 850V 14 I C = 16A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts 1.6 VF - Volts IC - Amperes 10 8 6 4 Cies 1,000 Coes 100 2 Cres 10 0 0 10 20 30 40 50 60 70 0 80 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 45 1.000 40 30 Z(th)JC - ºC / W IC - Amperes 35 25 20 15 10 5 0 200 0.100 0.010 TJ = 125ºC RG = 22Ω dV / dt < 10V / ns 400 600 800 1000 1200 1400 1600 1800 0.001 0.00001 VCE - Volts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: B_16N170(4A)10-06-08 IXBH16N170 IXBT16N170 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 340 350 300 300 VGE = 15V VGE = 15V TJ = 125ºC VCE = 850V I 220 C t r - Nanoseconds VCE = 850V 260 t r - Nanoseconds RG = 22Ω RG = 22Ω = 32A 180 140 I C 250 200 150 100 TJ = 25ºC = 16A 50 100 0 60 25 35 45 55 65 75 85 95 105 115 8 125 10 12 14 16 18 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - 160 TJ = 125ºC, VGE = 15V 140 I C = 32A 500 120 400 100 300 80 I C = 16A 200 60 0 40 60 80 100 120 140 800 240 600 230 500 220 400 210 I C = 32A 300 20 160 200 200 25 35 45 55 RG = 22Ω, VGE = 15V 900 280 260 TJ = 125ºC 600 240 500 220 TJ = 25ºC t f - Nanoseconds 800 115 190 125 td(off) - - - - 1200 TJ = 125ºC, VGE = 15V VCE = 850V 800 1000 700 800 I C = 16A 600 600 500 400 200 300 180 200 160 14 105 t d(off) - Nanoseconds 300 12 95 1400 tf 320 900 10 85 1000 340 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - VCE = 850V 8 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 360 tf 400 65 TJ - Degrees Centigrade 1200 700 I C = 16A 700 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 1000 32 250 RG = 22Ω, VGE = 15V RG - Ohms 1100 30 td(off) - - - - VCE = 850V 40 100 20 28 260 tf t f - Nanoseconds VCE = 850V 26 t d(off) - Nanoseconds 600 24 900 t d(on) - Nanoseconds t r - Nanoseconds 180 tr 22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 800 700 20 IC - Amperes 16 18 20 22 24 26 28 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 30 32 I 400 C = 32A 200 300 20 40 60 80 100 120 140 0 160 RG - Ohms IXYS REF: B_16N170(4A)10-06-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.