IXBH24N170

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT24N170 IXBH24N170 VCES = 1700V IC110 = 24A VCE(sat) ≤ 2.5V TO-268 (IXBT) G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V C (Tab) VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 24 A ICM TC = 25°C, 1ms 230 A SSOA VGE = 15V, TVJ = 125°C, RG = 10Ω ICM = 50 A (RBSOA) Clamped Inductive Load VCES ≤ 1360 V PC TC = 25°C 250 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 1.13/10 Nm/lb.in. 4 6 g g TO-247 (IXBH) G BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 5.0 V 25 500 μA μA ±100 nA 2.5 TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved 2.4 C = Collector Tab = Collector z z z High Blocking Voltage International Standard Packages Low Conduction Losses Advantages Low Gate Drive Requirement High Power Density Applications V TJ = 125°C C (Tab) Features z Characteristic Values Min. Typ. Max. E G = Gate E = Emiiter z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C V z z z z z Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100190A(03/13) IXBT24N170 IXBH24N170 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 15 IC = IC110, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg(on) Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = IC110, VGE = 15V VCE = 850V, RG = 10Ω Resistive Switching Times, TJ = 125°C IC = IC110, VGE = 15V VCE = 850V, RG = 10Ω 25 S 2790 pF 163 pF 60 pF 140 nC 16 nC 60 nC 33 ns 82 ns 315 ns 750 ns 35 ns 155 ns 325 ns 960 ns RthJC RthCS 0.50 TO-247 TO-268 Outline Terminals: 1 - Gate 3 - Emitter 2,4 - Collector °C/W ° C/W 0.21 TO-247 Outline Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 24A, VGE = 0V 2.8 trr IF = 12A, VGE = 0V, -diF/dt = 100A/μs IRM VR = 100V 1 2 ∅P 3 V 1.06 μs 26 A e Terminals: 1 - Gate 3 - Emitter Dim. Note Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBT24N170 IXBH24N170 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 48 300 VGE = 25V 19V 15V 13V 11V 40 250 9V 32 13V 200 24 IC - Amperes IC - Amperes VGE = 25V 21V 19V 17V 15V 7V 16 8 11V 150 100 9V 7V 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 4 6 8 10 12 14 16 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 18 20 1.6 48 VGE = 25V 19V 15V 13V 11V VGE = 15V 1.5 I C = 48A 1.4 9V VCE(sat) - Normalized 40 32 IC - Amperes 2 VCE - Volts 7V 24 16 1.3 1.2 I C = 24A 1.1 1.0 0.9 8 I 5V C = 12A 0.8 0 0.7 0 0.5 1 1.5 2 2.5 3 -50 3.5 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 5.0 90 TJ = 25ºC 4.5 80 70 IC - Amperes VCE - Volts 4.0 3.5 I 3.0 2.5 C = 48A 24A 60 50 40 TJ = 125ºC 25ºC - 40ºC 30 2.0 20 12A 1.5 10 0 1.0 5 7 9 11 13 15 17 19 21 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 23 25 3 4 5 6 VGE - Volts 7 8 9 IXBT24N170 IXBH24N170 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 50 80 TJ = - 40ºC 45 70 40 30 TJ = 125ºC IF - Amperes g f s - Siemens 60 25ºC 35 125ºC 25 20 50 TJ = 25ºC 40 30 15 20 10 10 5 0 0 0 10 20 30 40 50 60 70 80 90 100 110 0 120 0.4 0.8 1.2 IC - Amperes Fig. 9. Gate Charge 2 2.4 2.8 3.2 30 35 40 Fig. 10. Capacitance 16 10,000 f = 1 MHz VCE = 850V 14 I C = 24A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts 1.6 VF - Volts 10 8 6 4 Cies 1,000 Coes 100 Cres 2 10 0 0 20 40 60 80 100 120 0 140 5 10 15 20 25 VCE - Volts QG - NanoCoulombs Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 1 60 50 Z(th)JC - ºC / W IC - Amperes 40 30 0.1 0.01 20 TJ = 125ºC 10 0 200 RG = 10Ω dv / dt < 10V / ns 400 600 800 1000 1200 1400 1600 1800 0.001 0.00001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBT24N170 IXBH24N170 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 350 350 RG = 10Ω , VGE = 15V RG = 10Ω , VGE = 15V 300 300 VCE = 850V I C = 48A t r - Nanoseconds t r - Nanoseconds 250 200 150 100 I C VCE = 850V 250 TJ = 125ºC 200 150 100 = 24A TJ = 25ºC 50 50 0 0 25 35 45 55 65 75 85 95 105 115 10 125 15 20 25 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr td(on) - - - - 1200 90 1100 80 1000 300 60 I C = 24A 250 50 tf 40 45 50 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 1300 tf 1200 td(off) - - - - RG = 10Ω, VGE = 15V 1100 420 1500 400 1400 900 340 800 320 700 300 600 280 TJ = 25ºC, 125ºC 500 400 15 20 25 30 35 40 45 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 50 tf td(off) - - - - 1000 TJ = 125ºC, VGE = 15V 900 VCE = 850V 1200 800 1100 700 1000 600 I C = 24A 900 500 800 400 I C = 48A 700 300 260 600 200 240 500 t d(off) - Nanoseconds 360 t d(off) - Nanoseconds 1000 260 125 1100 1300 380 VCE = 850V 10 270 I C = 48A 25 55 310 I C = 24A 280 400 35 320 600 20 30 VCE = 850V 290 500 25 330 700 30 20 td(off) - - - - RG = 10Ω, VGE = 15V 300 150 15 50 800 40 10 45 340 900 200 100 t f - Nanoseconds t f - Nanoseconds 70 t f - Nanoseconds t r - Nanoseconds I C = 48A t d(on) - Nanoseconds VCE = 850V 350 40 t d(off) - Nanoseconds 100 TJ = 125ºC, VGE = 15V 400 35 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 500 450 30 IC - Amperes TJ - Degrees Centigrade 100 10 15 20 25 30 35 40 45 50 55 RG - Ohms IXYS REF: B_24N170(6N)9-09-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.