IXBH40N160

IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 33 A VCES = 1600 V VCE(sat) = 6.2 V typ. tfi = 40 ns N-Channel, Enhancement Mode C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 Ω VCE = 0.8·VCES Clamped inductive load, L = 100 µH PC TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 1600 1600 V V ±20 ±30 V V 33 20 40 A A A ICM = 40 A 350 W -55 ... +150 150 -55 ... +150 300 °C °C °C °C 1.15/10Nm/lb.in. Weight Symbol 6 Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 1 mA, VGE = 0 V 1600 VGE(th) IC = 2 mA, VCE = VGE 4 ICES VCE = 0.8·VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC V 8 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V 6.2 TJ = 125°C IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved g V 400 3 µA mA ± 500 nA 7.1 7.8 V V Features • International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • MOS Gate turn-on - drive simplicity • Intrinsic diode Applications • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density 0648 Symbol C = Collector, TAB = Collector 1-4 IXBH 40N160 Symbol Conditions Cies Coes Cres VCE = 25 V, VGE = 0 V, f = 1 MHz Qg td(on) tri td(off) tfi Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3300 220 30 pF pF pF 130 nC 200 60 270 ns ns ns 40 ns 0.25 0.35 K/W K/W IC = 20 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 960 V, RG = 22 Ω RthJC RthCK Reverse Conduction Symbol VF Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions min. IF = IC90, VGE = 0 V, Pulse test t < 300 µs, duty cycle d < 2% typ. max. 2.5 5 V TO-247 AD Outline © 2006 IXYS All rights reserved Millimeter Min. Max. Inches Min. Max. A B 19.81 20.80 20.32 21.46 0.780 0.819 0.800 0.845 C D 15.75 3.55 16.26 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 0648 IXYS reserves the right to change limits, test conditions and dimensions. Dim. 2-4 IXBH 40N160 70 70 VGE = 17V TJ = 25°C VGE = 17V TJ = 125°C 60 60 15V 50 13V IC - Amperes IC - Amperes 15V 40 30 20 50 13V 40 30 20 10 10 0 0 0 2 4 6 8 10 12 14 16 0 18 2 4 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 70 70 VCE = 20V 60 60 50 50 IF - Amperes IC - Amperes 6 40 TJ = 25°C TJ = 125°C 30 40 30 TJ = 25°C 20 20 10 10 0 0.0 0 5 6 7 8 9 10 11 12 13 0.5 1.0 VGE - Volts 2.5 3.0 3.5 4.0 Fig. 4 Typ. Characteristics of Reverse Conduction 100 VCE = 600V IC = 20A 14 2.0 VF - Volts Fig. 3 Typ. Transfer Characteristics 16 1.5 TJ = 125°C ICM - Amperes VGE - Volts 12 10 8 6 10 TJ = 125°C VCEK < VCES IXBH 40N140 IXBH 40N160 1 4 2 0 20 40 60 80 100 120 140 QG - nanocoulombs Fig. 5 Typ. Gate Charge characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0.1 0 400 800 1200 1600 VCE - Volts Fig. 6 Reverse Based Safe Operating Area RBSOA 0648 0 3-4 IXBH 40N160 400 VCE = 960V VGE = 15V IC = 20A TJ = 125°C VCE = 960V VGE = 15V 40 RG = 22Ω td(off) - nanoseconds tfi - nanoseconds 50 TJ = 125°C 30 20 10 300 200 100 0 0 0 10 20 30 40 0 10 20 30 40 RG - Ohms IC - Amperes Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time 1 ZthJC - K/W 0.1 0.01 Single Pulse 0.001 0.0001 0.00001 IXBH40 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0648 Fig. 9 Typ. Transient Thermal Impedance 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.