IXBH42N170A

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(sat) ≤ tfi = 1700V 21A 6.0V 20ns TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms 42 21 265 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 84 1360 A V TSC (SCSOA) VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 10Ω, non repetitive 10 µs PC TC = 25°C 357 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features 300 260 °C °C z 1.13/10 Nm/lb.in. 4 6 g g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 E C (Tab) TO-247 (IXBH) G C E G = Gate E = Emiiter z z z C (Tab) C = Collector Tab = Collector High Blocking Voltage International Standard Packages Anti-Parallel Diode Low Conduction Losses Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250µA, VGE = 0V 1700 VGE(th) IC = 750µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC90, VGE = 15V, Note 1 5.2 © 2012 IXYS CORPORATION, All Rights Reserved V 50 µA 1.5 mA TJ = 125°C TJ = 125°C Applications V 5.5 5.3 Low Gate Drive Requirement High Power Density ±100 nA 6.0 V z z z z z Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) AC Motor Drives Capacitor Discharge Circuits AC Switches V DS98939A(11/12) IXBT42N170A IXBH42N170A Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 14 IC = IC90, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC90, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC90, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Diode Type = DH40-18A Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = IC90, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Diode Type = DH40-18A Note 2 RthJC RthCS TO-247 TO-268 Outline 23 S 3920 275 107 pF pF pF 188 23 80 nC nC nC 19 17 3.43 200 20 0.43 ns ns mJ ns ns mJ 19 14 5.40 226 82 0.83 ns ns mJ ns ns mJ 0.21 0.35 °C/W °C/W Terminals: 1 - Gate 3 - Emitter 2,4 - Collector TO-247 Outline Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. 5.0 1 VF IF = IC90, VGE = 0V trr IF = 25A, VGE = 0V, -diF/dt = 50A/µs 330 ns IRM VR = 100V, VGE = 0V 15 A 2 ∅P 3 V e Terminals: 1 - Gate 3 - Emitter Note 1: Dim. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBT42N170A IXBH42N170A Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 180 80 VGE = 15V 12V 10V 70 9V 140 10V IC - Amperes 60 IC - Amperes VGE = 15V 12V 11V 160 8V 50 40 30 120 100 9V 80 60 8V 7V 20 40 10 20 6V 0 0 1 2 3 4 5 6 7 8 9 10 7V 0 11 12 0 5 10 6V 20 15 25 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 1.8 80 VGE = 15V 12V 10V 9V 70 VCE(sat) - Normalized 60 IC - Amperes VGE = 15V 1.6 8V 50 40 7V 30 20 C = 84A I C = 42A I C = 21A 1.4 1.2 1.0 0.8 6V 0.6 10 I 5V 0 0.4 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 13 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 50 75 100 125 150 Fig. 6. Input Admittance 100 16 90 TJ = 25ºC 14 80 70 I C = 84A IC - Amperes 12 VCE - Volts 25 TJ - Degrees Centigrade 10 8 42A 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 20 6 10 21A 0 4 6 7 8 9 10 11 12 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXBT42N170A IXBH42N170A Fig. 7. Transconductance Fig. 8. Gate Charge 45 16 TJ = - 40ºC 35 25ºC 30 125ºC VGE - Volts g f s - Siemens 40 25 20 14 VCE = 850V 12 I G = 10mA I C = 42A 10 8 6 15 10 4 5 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 IC - Amperes 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Capacitance 10,000 220 200 Capacitance - PicoFarads 180 IF - Amperes 160 140 TJ = 25ºC J 120 TJ = 125ºC 100 80 60 Cies 1,000 Coes 100 Cres 40 20 f = 1 MHz 0 10 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 VCE - Volts VF - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 90 1 80 60 Z(th)JC - ºC / W IC - Amperes 70 50 40 30 20 TJ = 125ºC 10 RG = 10Ω dv / dt < 10V / ns 0 200 400 600 800 1000 1200 1400 1600 1800 0.1 0.01 0.001 0.0001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.001 0.01 Pulse Width - Second 0.1 1 IXBT42N170A IXBH42N170A Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 25µs IC - Amperes IC - Amperes 25µs 100µs 10 1ms 1 1ms 1 10ms TJ = 150ºC 0.1 100µs 10 0.1 DC TC = 25ºC Single Pulse TJ = 150ºC 10ms TC = 75ºC DC Single Pulse 0.01 0.01 1 10 100 1,000 10,000 1 10 100 VCE - Volts Fig. 15. Inductive Switching Energy Loss vs. Gate Resistance --- 5 VCE = 850V 20 3 16 I 2 C = 42A 3 15 TJ = 25ºC 2 10 1 5 12 1 8 0 4 1 2 3 4 5 6 7 8 9 0 10 0 20 30 40 50 RG - Ohms 6 Eon - --- VCE = 850V C = 84A 16 2 12 I C 0 45 55 65 75 85 95 105 TJ - Degrees Centigrade © 2012 IXYS CORPORATION, All Rights Reserved 115 400 VCE = 850V 350 80 300 I C = 84A 60 I C 250 = 42A 40 200 8 20 150 4 125 0 = 42A 1 Eon - MilliJoules I t d(off) - - - - 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 20 35 tf i TJ = 125ºC, VGE = 15V 100 4 25 450 120 24 RG = 1Ω , VGE = 15V 3 80 140 t f i - Nanoseconds Eoff 70 Fig. 18. Inductive Turn-off Switching Times vs. Gate Resistance 28 5 60 IC - Amperes Fig. 17. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules Eon - MilliJoules = 84A 20 TJ = 125ºC VCE = 850V Eon - MilliJoules C 25 --- TJ = 125ºC , VGE = 15V 24 4 Eon - Eoff 4 I 10,000 Fig. 16. Inductive Switching Energy Loss vs. Collector Current 28 TJ = 125ºC , VGE = 15V 5 Eoff - MilliJoules Eon - Eoff 6 32 Eoff - MilliJoules 7 1,000 VCE - Volts IXBT42N170A IXBH42N170A Fig. 20. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 19. Inductive Turn-off Switching Times vs. Collector Current 140 t d(off) - - - - RG = 1Ω , VGE = 15V 200 TJ = 125ºC 60 180 TJ = 25ºC 40 160 20 140 t d(off) - - - 200 VCE = 850V 80 180 I C = 42A, 84A 60 160 40 0 120 20 30 40 50 60 70 140 20 80 25 35 45 IC - Amperes t d(on) - - - - 100 60 I C 26 = 42A 40 22 20 18 0 120 125 6 7 8 9 t d(on) - - - 26 80 24 TJ = 25ºC 60 22 40 20 TJ = 125ºC 20 14 5 t r i - Nanoseconds t r i - Nanoseconds = 84A 30 4 115 18 0 10 t d(on) - Nanoseconds C 80 3 105 VCE = 850V t d(on) - Nanoseconds I 34 2 95 RG = 1Ω , VGE = 15V 38 100 1 85 28 tr i 42 TJ = 125ºC, VGE = 15V VCE = 850V 75 120 46 120 65 Fig. 22. Inductive Turn-on Switching Times vs. Collector Current 160 tr i 55 TJ - Degrees Centigrade Fig. 21. Inductive Turn-on Switching Times vs. Gate Resistance 140 t d(off) - Nanoseconds 220 t d(off) - Nanoseconds 80 tfi RG = 1Ω , VGE = 15V 100 VCE = 850V 100 220 240 t f i - Nanoseconds tfi 120 t f i - Nanoseconds 120 260 16 20 RG - Ohms 30 40 50 60 70 80 IC - Amperes Fig. 23. Inductive Turn-on Switching Times vs. Junction Temperature 160 26 tr i 140 t d(on) - - - - 25 RG = 1Ω , VGE = 15V t r i - Nanoseconds 24 VCE = 850V 100 I C = 84A 23 80 22 60 21 I 40 C = 42A 20 t d(on) - Nanoseconds 120 20 19 0 25 35 45 55 65 75 85 95 105 115 18 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_42N170A(7N)11-12-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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