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IXBH5N160G

IXBH5N160G

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO247

  • 描述:

    IGBT 1600V 5.7A 68W Through Hole TO-247AD (IXBH)

  • 详情介绍
  • 数据手册
  • 价格&库存
IXBH5N160G 数据手册
IXBP 5N160 G IXBH 5N160 G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor C Preliminary data sheet IC25 VCES VCE(sat) tf = 5.7 A = 1600 V = 4.9 V = 70 ns TO-220 AB (IXBP) G C C (TAB) E G TO-247 AD (IXBH) E G C E C (TAB) A = Anode, C = Cathode , TAB = Cathode IGBT Features Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = 10/0 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH Ptot TC = 25°C Symbol Conditions IC = 3 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.3 mA; VGE = VCE ICES VGE = 0 V; VCE = VCES; TVJ = 25°C VCE = 0.8VCES; TVJ = 125°C td(on) tr td(off) tf V ± 20 V 5.7 3.5 A A 6 0.8VCES A 68 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IGES 1600 4.9 5.6 3.5 Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 10 V; IC = 3 A VF (reverse conduction); IF = 3 A RthJC V V 5.5 V 150 µA µA 100 nA 50 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 960 V; IC = 3 A VGE = 10/0 V; RG = 47 Ω 7.2 140 200 120 70 ns ns ns ns 325 26 pF nC 6 V • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability • industry standard package - TO-220AB - TO-247AD epoxy meets UL94V-0 Applications • switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators 1.85 K/W 321 Symbol IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXBP 5N160 G IXBH 5N160 G Dimensions Component Symbol Conditions Maximum Ratings TVJ Tstg MD mounting torque Symbol Conditions RthCH with heatsink compound Weight (TO-220) (TO-247) (TO-220) (TO-247) -55...+150 -55...+125 °C °C 0.6 1.2 Nm Nm TO-220 AB Characteristic Values min. typ. max. 0.25 K/W 2 6 g g Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-247 AD © 2003 IXYS All rights reserved Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D* 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 321 Dim. 2-2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXBH5N160G
物料型号:IXBP 5N160 G和IXBH 5N160 G。

器件简介:这些是单片双极型MOS晶体管,具有高电压BIMOSFET技术,可以作为高压MOSFET的替代品,具有更低的电压降和MOSFET兼容的控制特性。

引脚分配:文档中提供了两种封装类型的引脚分配,分别是TO-220 AB和TO-247 AD。

参数特性:包括最大电流(I_C25)为5.7A,最大集电极-发射极电压(V_CES)为1600V,饱和压降(V_CE(sat))为4.9V,以及存储时间(t)为70ns。

功能详解:文档列出了详细的电气特性,如集电极-发射极饱和电压(CE(sat))、门极-发射极阈值电压(GE(th))、集电极-发射极具性电流(CES)、门极-发射极电流(GES)等。

应用信息:这些BIMOSFET适用于开关电源、DC-DC转换器、谐振转换器、灯镇流器、激光发生器和X射线发生器等。

封装信息:提供了TO-220 AB和TO-247 AD两种封装的尺寸和重量信息。
IXBH5N160G 价格&库存

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