IXBL60N360

Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = 3600V IC110 = 36A VCE(sat)  3.4V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3600 V VCGR TJ = 25°C to 150°C, RGE = 1M 3600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 92 A IC110 TC = 110°C 36 A ICM TC = 25°C, 1ms 720 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 4.7 Clamped Inductive Load ICM = 480 VCES  1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive PC TC G 417 W -55 ... +150 °C  TJM 150 °C  Tstg -55 ... +150 °C  300 260 °C °C 30..170 / 7..36 N/lb 4000 V~ 8 g = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force with Clip VISOL 50/60Hz, 5 Seconds Weight Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BV CES IC = 250μA, VGE = 0V 3600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 3000V, VGE = 0V Note 2, TJ = 100°C IGES VCE = 0V, VGE = ± 20V VCE(SAT) IC = 60A, VGE = 15V, Note 1 TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved Isolated Tab C = Collector Features μs TL TSOLD C G = Gate E = Emitter 10 TJ E 2.8 3.4  Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Frequency Operation Advantages   Low Gate Drive Requirement High Power Density Applications  V 125  5.0 V 25 μA μA ±200 nA 3.4 V V Switch-Mode and Resonant-Mode Power Supplies  Uninterruptible Power Supplies (UPS)  Laser Generators  Capacitor Discharge Circuits  AC Switches DS100577(11/13) IXBL60N360 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 37 Cies Coes Cres RGi Qg(on) Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf IC = 60A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz S 8140 367 174 pF pF pF 5.0  450 52 187 nC nC nC 50 300 ns ns 340 910 ns ns 56 674 ns ns 370 1025 ns ns IC = 60A, VGE = 15V, VCE = 1000V Resistive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 960V, RG = 4.7 VCE = 960V, RG = 4.7 RthJC RthCS E 62 Integrated Gate Input Resistance Resistive load, TJ = 125°C IC = 60A, VGE = 15V ISOPLUS i5-PakTM HV (IXBL) Outline 0.30 °C/W °C/W 0.15 Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 60A, VGE = 0V, Note 1 trr IF = 30A, VGE = 0V, -diF/dt = 150A/μs IRM QRM 5.0 1.95 VR = 100V, VGE = 0V V S 4 1 2 + e1 e1 3 c b1 b3 b2 e PIN 1 = Gate PIN 2 = Emitter PIN 3 = Collector PIN 4 = Isolated SYM INCHES MIN MAX MILLIMETER MIN MAX A 0.190 0.205 4.83 A1 0.102 0.118 2.59 5.21 3.00 A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 0.799 E 0.770 19.56 20.29 e 0.150 BSC 3.81 BSC e1 L 0.450 BSC 11.43 BSC 0.780 0.820 19.81 20.83 L1 0.080 0.102 2.03 Q 0.210 0.235 5.33 5.97 Q1 0.490 0.513 12.45 13.03 4.57 2.59 R 0.150 0.180 3.81 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 μs 78 A 75.7 μC ADVANCETECHNICAL INFORMATION Notes: The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBL60N360 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 120 300 VGE = 25V 15V 11V 100 VGE = 25V 15V 11V 250 9V I C - Amperes I C - Amperes 80 60 7V 40 9V 200 8V 150 100 7V 20 50 6V 6V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 120 1.6 VGE = 25V 15V 11V VGE = 15V 1.5 9V VCE(sat) - Normalized 1.4 80 I C - Amperes 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 100 15 VCE - Volts VCE - Volts 60 7V 40 I C = 120A 1.3 1.2 I C = 60A 1.1 1.0 0.9 I C = 30A 20 0.8 5V 0.7 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 5.0 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 200 180 TJ = 25ºC 6 160 5 I C - Amperes VCE - Volts 140 5 I C = 120A 4 4 60A 120 100 80 60 TJ = 125ºC 25ºC 3 40 30A 3 -40ºC 20 0 2 5 6 7 8 9 10 11 12 13 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBL60N360 Fig. 7. Transconductance Fig. 8. Gate Charge 16 120 TJ = - 40ºC VCE = 1000V 14 100 I C = 60A I G = 10mA VGE - Volts g f s - Siemens 12 25ºC 80 125ºC 60 10 8 6 40 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 220 50 100 150 250 300 350 400 450 Fig. 10. Capacitance Fig. 9. Forward Voltage Drop of Intrinsic Diode 100,000 200 180 TJ = 25ºC 125ºC f = 1 MHz Capacitance - PicoFarads J 160 140 I F - Amperes 200 QG - NanoCoulombs I C - Amperes 120 100 80 VGE = 0V 60 VGE = 15V 40 10,000 Cies 1,000 Coes 20 Cres 0 100 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 VCE - Volts VF - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 500 400 Z (th)JC - ºC / W I C - Amperes 0.1 300 200 0.01 TJ = 125ºC 100 RG = 4.7Ω dv / dt < 10V / ns 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 VCE - KiloVolts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds 10 100 IXBL60N360 Fig. 13. Forward-Bias Safe Operating Area @ T C = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ T C = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 10 1ms 1 10ms TJ = 150ºC 0.1 TC = 25ºC I C - A m peres I C - A m peres 25µs 100µs 25µs 10 100µs 1 1ms TJ = 150ºC 0.1 Single Pulse DC 0.01 10ms TC = 75ºC Single Pulse 100ms DC 0.01 1 10 100 1,000 VCE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 10,000 1 10 100 1,000 100ms 10,000 VCE - Volts IXYS REF: B_60N360(H9-B11-27) 11-15-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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