IXBL64N250

High Voltage, High Gain BiMOSFETTM IXBL64N250 VCES IC110 = 2500V = 46A  3.0V VCE(sat) Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1M 2500 V VGES Continuous ±25 V VGEM Transient ±35 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 116 46 750 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 1 ICM = 160 A (RBSOA) Clamped Inductive Load TSC (SCSOA) VGE = 15V, TJ = 125°C RG = 5, VCE = 1250V, Non-Repetitive PC TC = 25°C VCE < 0.8 • VCES G  500 W  -55 ... +150 °C  TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 2500 V~ 30..170 / 7..36 Nm/lb-in. 8 g Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 VISOL 50/60Hz, 1 minute FC Mounting Force with Clip Weight Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IC = 1mA, VGE = 0V 2500 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V 5.0 IGES VCE = 0V, VGE = ± 25V VCE(sat) IC = 64A, VGE = 15V, Note 1 TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved     Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V Electrical Isolation High Blocking Voltage Low Switching Losses High Current Handling Capability Anti-Parallel Diode Advantages   High Power Density Low Gate Drive Requirement  V V 50 μA Note 2, TJ = 125C C = Collector Applications Characteristic Values Min. Typ. Max. BVCES Isolated Tab Features μs TL TSOLD C G = Gate E = Emitter 10 TJ E Switch-Mode and Resonant-Mode Power Supplies  Uninterrupted Power Supplies (UPS)  Capacitor Discharge Circuits  Laser Generators 6 mA ±200 nA 2.5 3.1 3.0 V V DS100259A(5/18) IXBL64N250 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 64A, VCE = 10V, Note 1 40 Cies VCE = 25V, VGE = 0V, f = 1MHz Coes ISOPLUS i5-PakTM HV (IXBL) Outline E 72 S 8900 pF 345 pF Cres 118 pF Qg 400 nC Qge IC = 64A, VGE = 15V, VCE = 600V Qgc td(on) Resistive Switching Times, TJ = 25°C tr IC = 128A, VGE = 15V td(off) VCE = 1250V, RG = 1 tf td(on) Resistive Switching Times, TJ = 125°C tr IC = 128A, VGE = 15V td(off) VCE = 1250V, RG = 1 tf 46 nC 155 nC 49 ns 318 ns 232 ns 170 ns 3 c e1 e1 b3 b2 Pin 1 Pin 2 Pin 3 Tab 4 SYM INCHES MIN MAX b1 e = Gate = Emitter = Collector = Electrically Isolated MILLIMETER MIN MAX A 0.190 0.205 4.83 5.21 A1 0.102 0.118 2.59 3.00 A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 1.83 578 ns b1 0.063 0.072 1.60 222 ns b2 0.058 0.068 1.47 1.73 175 ns c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 0.25 °C/W °C/W Reverse Diode Characteristic Values Min. Typ. Max VF IF = 64A, VGE = 0V, Note 1 trr IF = 64A, VGE = 0V, -diF/dt = 650A/μs 160 ns IRM VR = 600V, VGE = 0V 480 A Notes: + ns 0.15 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) 4 1 2 54 RthJC RthCS S 3.0 e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 3.81 BSC L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 11.43 BSC 19.81 20.83 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 V 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Part must be heatsunk for high-temp Ices measurement. Additional provisions for lead-to-lead isolation are required at VCE >1200V. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBL64N250 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Output Characteristics @ TJ = 125oC 270 VGE = 25V 20V 15V 300 210 250 180 10V 200 I C - Amperes I C - Amperes VGE = 25V 20V 15V 240 150 10V 150 120 90 100 60 50 5V 30 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 0.5 1 1.5 2 2.5 VCE - Volts 3.5 4 4.5 5 5.5 23 25 Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 3. Dependence of VCE(sat) on Junction Temperature 2.0 3 VCE - Volts 6.5 VGE = 15V 6.0 1.8 o TJ = 25 C I C = 256A 1.4 I C = 128A 1.2 I C = 256A 128A 64A 5.0 VCE - Volts VCE(sat) - Normalized 5.5 1.6 4.5 4.0 3.5 1.0 3.0 I C = 64A 0.8 2.5 2.0 0.6 -50 -25 0 25 50 75 100 125 5 150 7 9 11 Fig. 5. Breakdown & Threshold Voltages vs. Junction Temperature 15 17 19 21 Fig. 6. Input Admittance 1.15 120 1.10 100 BVCES 1.05 o I C - Amperes BVCES & VGE(th) - Normalized 13 VGE - Volts TJ - Degrees Centigrade 1.00 0.95 TJ = 125 C 80 o 25 C o - 40 C 60 40 0.90 VGE(th) 20 0.85 0.80 0 -55 -35 -15 5 25 45 65 TJ - Degrees Centigrade © 2018 IXYS CORPORATION, All Rights Reserved 85 105 125 3.5 4.0 4.5 5.0 5.5 VGE - Volts 6.0 6.5 7.0 IXBL64N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 200 100 o TJ = - 40 C 90 180 160 o 25 C 70 60 140 I F - Amperes g f s - Siemens 80 o 125 C 50 40 TJ = 25 C o TJ = 125 C 100 80 30 60 20 40 10 20 0 o 120 0 0 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 I C - Amperes Fig. 9. Gate Charge 2.6 2.8 Fig. 10. Capacitance 16 100,000 f = 1 MHz VCE = 600V 14 Capacitance - PicoFarads I C = 64A I G = 10mA 12 V GE - Volts 2.4 VF - Volts 10 8 6 4 Cies 10,000 1,000 Coes 100 Cres 2 0 10 0 50 100 150 200 250 300 350 400 0 450 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 180 160 0.1 120 Z(th)JC - K / W I C - Amperes 140 100 80 0.01 60 0.001 o 40 TJ = 125 C 20 RG = 1Ω dv / dt < 10V / ns 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.0001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBL64N250 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 650 650 RG = 1Ω , VGE = 15V 600 600 VCE = 1250V 550 t r - Nanoseconds t r - Nanoseconds 550 500 I C = 256A, 128A, 64A 450 400 350 o TJ = 125 C 500 450 RG = 1Ω VGE = 15V 400 VCE = 1250V 350 o 300 300 TJ = 25 C 250 200 250 25 35 45 55 65 75 85 95 105 115 60 125 80 100 120 140 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 65 I C = 128A 60 I C = 64A 550 55 500 t f - Nanoseconds I C = 256A 50 450 45 1 2 3 4 5 6 7 8 9 tf 230 tf 220 210 225 200 210 I C = 128A, 256A 190 195 180 180 170 165 160 10 25 35 45 55 65 75 85 95 105 115 150 125 td(off) Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 290 400 270 350 700 600 I C = 64A, 128A, 256A 260 230 230 210 o 190 TJ = 125 C, 25 C t f - Nanoseconds 250 300 500 250 400 200 300 150 tf 200 td(off) o 170 140 60 80 100 120 140 160 180 200 I C - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 220 240 170 100 150 260 50 TJ = 125 C, VGE = 15V t d ( o f f ) - Nanoseconds VCE = 1250V t d ( o f f ) - Nanoseconds t f - Nanoseconds 240 VCE = 1250V RG = 1Ω, VGE = 15V o 255 TJ - Degrees Centigrade 350 200 270 RG = 1Ω, VGE = 15V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 290 285 td(off) RG - Ohms 320 260 t d ( o f f ) - Nanoseconds 70 600 240 I C = 64A 240 VCE = 1250V 650 220 300 250 75 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) o TJ = 125 C, VGE = 15V 700 200 260 80 tr 180 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 800 750 160 I C - Amperes 100 VCE = 1250V 0 1 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: B_64N250(9P) 4-05-10-A