IXBN75N170

Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170 VCES IC90 VCE(sat) = 1700V = 75A ≤ 3.1V SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms 145 75 680 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 150 A (RBSOA) Clamped Inductive Load PC TC = 25°C E c G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VCE < 0.8 • VCES 625 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. z 30 g z TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 VISOL 50/60Hz IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque (M4) t = 1min t = 1s Weight Features z z z z z Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 1.5mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V 5.5 IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC90, VGE = 15V, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.6 3.1 V z V z z 2 mA z ±100 nA z 3.1 High Power Density Low Gate Drive Requirement Easy to Mount with 2 Screws Intergrated Diode Can Be Used for Protection Applications 25 μA TJ = 125°C International Standard Package High Blocking Voltage Isolation Voltage 3000 V~ High Current Handling Capability Anti-Parallel Diode Capacitor Discharge AC Switches Switch-Mode and Resonant-Mode Power Supplies UPS AC Motor Drives V V DS100168A(10/09) IXBN75N170 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 34 IC = IC90, VCE = 10V, Note 1 SOT-227B miniBLOC (IXBN) 56 S 6930 pF 400 pF Cres 150 pF Qg 350 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = IC90, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive load, TJ = 25°C IC = IC90, VGE = 15V RG = 1Ω, VCE = 0.5 • VCES Resistive load, TJ = 125°C IC = IC90, VGE = 15V RG = 1Ω, VCE = 0.5 • VCES 50 nC 160 nC 46 160 260 440 ns ns ns ns 47 230 260 580 ns ns ns ns 0.20 °C/W RthJC RthCS 0.05 °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF Characteristic Values Min. Typ. Max IF = IC90, VGE = 0V, Note 1 trr IRM QRM Note 3.0 1.5 50 38.2 IF = 37V, VGE = 0V, -diF/dt = 100A/μs VR = 100V, VGE = 0V V μs A μC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBN75N170 Fig. 1. Output Characteristics @ 25ºC 160 320 VGE = 25V 19V 15V 13V 11V 140 120 240 9V 100 80 60 40 0 0 1.0 1.5 2.0 2.5 3.0 9V 120 40 3.5 4.0 7V 4.5 0 2 4 6 8 10 12 14 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 160 18 125 150 VGE = 15V 1.6 1.5 VCE(sat) - Normalized 120 16 1.7 VGE = 25V 19V 15V 13V 11V 140 IC - Amperes 160 20 0.5 11V 200 80 7V 0.0 VGE = 25V 17V 15V 13V 280 IC - Amperes IC - Amperes Fig. 2. Extended Output Characteristics @ 25ºC 100 9V 80 60 7V 40 I 1.4 C = 150A 1.3 1.2 I 1.1 C = 75A 1.0 0.9 20 I 0.8 5V 0 C = 37.5A 0.7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 25 VCE - Volts 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 5.5 180 TJ = 25ºC 5.0 160 140 4.0 I C IC - Amperes VCE - Volts 4.5 = 150A 3.5 75A 3.0 120 100 TJ = 125ºC 25ºC - 40ºC 80 60 2.5 40 37.5A 2.0 20 0 1.5 5 7 9 11 13 15 17 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 19 21 23 25 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGE - Volts IXYS REF: B_75N170(8T)7-01-09 IXBN75N170 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 90 300 TJ = - 40ºC 80 125ºC 250 70 TJ = 25ºC 200 IF - Amperes g f s - Siemens 25ºC 60 50 40 30 TJ = 125ºC 150 100 20 50 10 0 0 0 20 40 60 80 100 120 140 160 180 200 220 0.4 0.6 0.8 1.0 1.2 1.6 1.8 2.0 2.2 2.4 Fig. 10. Capacitance Fig. 9. Gate Charge 16 100,000 f = 1 MHz VCE = 850V 14 I C = 75A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts 1.4 VF - Volts IC - Amperes Cies 10,000 10 8 6 4 1,000 Coes 100 Cres 2 10 0 0 40 80 120 160 200 240 280 320 0 360 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1.000 160 140 Z(th)JC - ºC / W IC - Amperes 120 100 80 60 40 20 0 200 0.100 0.010 TJ = 125ºC RG = 1Ω dV / dt < 10V / ns 400 600 800 1000 1200 1400 1600 1800 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBN75N170 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 450 400 RG = 1Ω , VGE = 15V RG = 1Ω , VGE = 15V 400 VCE = 850V VCE = 850V I 320 C 350 = 150A t r - Nanoseconds t r - Nanoseconds 360 280 240 TJ = 125ºC 300 250 200 TJ = 25ºC 150 200 100 I C = 75A 160 50 120 0 25 35 45 55 65 75 85 95 105 115 30 125 40 50 60 70 80 TJ - Degrees Centigrade I C = 150A 500 700 70 600 65 400 60 I C = 75A 300 55 200 100 1 2 3 4 5 6 7 8 9 t d(off) - - - - 150 VCE = 850V 280 I C = 75A 500 260 400 240 300 220 I C = 150A 50 200 45 100 200 25 10 35 45 55 65 75 85 95 105 115 180 125 TJ - Degrees Centigrade Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 1000 t d(off) - - - - 900 320 800 280 tf t d(off) - - - - 480 TJ = 125ºC, VGE = 15V 440 VCE = 850V 600 400 I C = 75A 600 260 500 240 400 220 300 200 200 240 180 100 200 160 150 0 200 TJ = 125ºC, 25ºC 100 30 40 50 60 70 80 90 100 110 120 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 130 140 500 360 400 320 300 I C 280 = 150A t d(off) - Nanoseconds 700 520 700 300 VCE = 850V t f i - Nanoseconds tf RG = 1Ω, VGE = 15V 340 t d(off) - Nanoseconds t f - Nanoseconds 140 300 RG = 1Ω, VGE = 15V Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 800 130 320 tf RG - Ohms 900 120 t d(off) - Nanoseconds VCE = 850V 75 t d(on) - Nanoseconds t r - Nanoseconds t d(on) - - - - TJ = 125ºC, VGE = 15V 600 110 800 80 t f - Nanoseconds 800 tr 100 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 700 90 IC - Amperes 160 1 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: B_75N170(8T)7-01-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.