IXBT10N170

High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 20 A IC90 TC = 90°C 10 A ICM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load ICM = 20 V CES = 1350 A V PC TC = 25°C 140 W °C -55 ... +150 TJ TO-268 (IXBT) G E TO-247 AD (IXBH) G G = Gate, E = Emitter, TJM 150 °C Tstg -55 ... +150 °C Features °C z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) (TO-247) Weight TO-247 AD TO-268 300 °C 260 1.13/10Nm/lb.in. z z z 6 4 g g z z Symbol BVCES VGE(th) Test Conditions IC = 250 µA, VGE = 0 V Temperature Coefficent IC = 250 µA, VCE = VGE Temperature Coefficent ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC 1700 0.10 3.0 - 0.24 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V TJ = 125°C © 2003 IXYS All rights reserved 3.4 4.1 V %/K 5.0 V %/K 10 100 µA µA ±100 nA 3.8 V V (TAB) C (TAB) C E C = Collector, TAB = Collector High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications z z z z AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge circuits Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS99048(05/03) IXBH 10N170 IXBT 10N170 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 4.0 6.5 S ∅P 700 pF 40 pF Cres 12 pF Qg 30 nC 6 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 10 nC td(on) 35 ns 28 ns tri Inductive load, TJ = 25°°C td(off) IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 56 Ω 500 ns 1000 ns Eoff 6 mJ td(on) 35 ns tfi tri Eon Inductive load, TJ = 125°°C td(off) IC tfi = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 56 Ω Eoff 28 ns 0.7 mJ 600 ns 1200 ns 8 mJ RthJC RthCK TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.89 K/W (TO-247) Reverse Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF t = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% IRM t rr IF vR = IC90, VGE = 0 V, -diF/dt = 50 A/us = 100 V 3.0 10 360 V A ns Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXBH 10N170 IXBT 10N170 Fig. 2. Extended Output Characteristics @ 25 deg. C Fig. 1. Output Characteristics @ 25 Deg. C 70 20 VG E = 17V 15V 13V 11V 18 16 50 I C - Amperes 14 I C - Amperes VG E = 17V 15V 60 9V 12 10 8 7V 6 13V 40 11V 30 20 9V 4 10 2 7V 0 0 1 2 3 4 5 6 0 4 6 8 10 12 14 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C Fig. 4. Temperature Dependence of V CE(sat) 20 VG E = 15V VC E (sat) - Normalized 16 16 1.8 VGE = 17V 15V 13V 11V 18 14 I C - Amperes 2 V C E - Volts 9V 12 10 8 7V 6 4 1.6 I C = 32A 1.4 1.2 I C = 16A 1 0.8 I C = 8A 2 0.6 0 1 2 3 4 5 6 7 -50 8 -25 0 V C E - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage Fig. 6. Input Admittance 10 20 9 17.5 8 15 I C - Amperes VC E - Volts T J = 25º C 7 6 I C = 20A 5 10A 4 12.5 10 7.5 T J = 125º C 25º C 5 -40º C 3 2.5 5A 2 0 6 7 8 9 10 11 V G E - Volts © 2003 IXYS All rights reserved 12 13 14 15 4 5 6 7 V G E - Volts 8 9 IXBH 10N170 IXBT 10N170 Fig. 8. Forward Voltage Drop of Fig. 7. Transconductance Intrinsic Diode 30 9 T J = -40º C 8 25º C 25 TJ = 25º C 125º C I F - Amperes gf s - Siemens 7 6 5 4 20 TJ = 125º C 15 10 3 2 5 1 0 0 0 2.5 5 7.5 10 12.5 17.5 20 0.5 2.5 Fig. 10. Dependence of Eoff on IC 14 14 I C = 20A E off - milliJoules TJ = 125º C VGE = 15V VC E = 1360V 3 T J = 125º C VG E = 15V VC E = 1360V 13 12 9 12 R G = 100 Ohms 11 R G= 10 Ohms 10 9 I C = 10A 8 8 7 7 0 20 40 60 80 10 100 12 14 16 18 20 I C - Amperes R G - Ohms Fig. 11. Dependence of Eoff on Temperature Fig. 12. Gate Charge 17 15 So lid lines - R G = 100 Ohms Dashed lines - R G = 10 Ohms 15 VC E = 600V I C = 10A I G = 10mA 12 13 VG E - Volts E off - milliJoules 2 Fig. 9. Dependence of Eoff on RG 15 10 1.5 V F - Volts 15 11 1 I C - Amperes 13 E off - milliJoules 15 I C = 20A 11 9 VG E = 15V VC E = 1360V 9 6 3 7 I C = 10A 0 5 0 25 50 75 100 125 150 TJ - Degrees Centigrade 0 5 10 15 20 25 30 Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXBH 10N170 IXBT 10N170 Fig. 13. Maximum Transient Thermal Resistance Fig. 12. Capacitance 1 1000 0.9 f = 1M Hz 0.8 R (th) J C - (ºC/W) Capacitance - pF C i es 100 C oes 0.7 0.6 0.5 0.4 C res 0.3 10 0.2 0 5 10 15 20 25 V C E - Volts © 2003 IXYS All rights reserved 30 35 40 1 10 100 Pulse Width - milliseconds 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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