IXBT12N300

Not for New Design High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = 3000V IC110 = 12A VCE(sat)  3.2V TO-268 (IXBT) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 30 12 100 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 30 Clamped Inductive Load ICM = 98 1500 A V PC TC = 25°C 160 W TJ C (Tab) -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 4 6 g g TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXBH) G Characteristic Values Min. Typ. Max. BVCES IC = 250µA, VGE = 0V 3000 VGE(th) IC = 250µA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 12A, VGE = 15V, Note 1 2.8 TJ = 125°C V 25 µA 1 mA TJ = 125°C 3.5 C = Collector Tab = Collector Features    ±100 nA 3.2 V V   High Blocking Voltage International Standard Packages Anti-Parallel Diode Low Conduction Losses Low Gate Drive Requirement High Power Density Applications:      © 2021 Littelfuse, Inc. C (Tab) Advantages V 5.0 E G = Gate E = Emitter  Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C Switched-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100120B(6/21) IXBT12N300 IXBH12N300 Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 6.5 IC = 12A, VCE = 10V, Note 1 10.8 S 1290 pF 56 pF Cres 19 pF Qg 62 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 12A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 12A, VGE = 15V VCE = 1250V, RG = 10 Resistive Switching Times, TJ = 125°C IC = 12A, VGE = 15V VCE = 1250V, RG = 10 13 nC 8.5 nC 64 ns 140 ns 180 ns 540 ns 65 ns 395 ns 175 ns 530 ns RthJC RthCS 0.78 TO-247 0.21 °C/W °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 12A, VGE = 0V trr IF = 6A, VGE = 0V, -diF/dt = 100A/µs 1.4 µs IRM VR = 100V, VGE = 0V 21 A Note 2.1 V 1: Pulse test, t  300µs, duty cycle, d  2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBT12N300 IXBH12N300 Not for New Design Fig. 1. Output Characteristics @ TJ = 25ºC 24 VGE = 25V VGE = 25V 20V 15V 20 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 240 200 20V 160 I C - Amperes I C - Amperes 16 10V 12 15V 120 8 4 80 10V 40 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 30 1.8 VGE = 25V 20V 15V VGE = 15V 16 10V 12 I C = 24A 1.6 VCE(sat) - Normalized 20 IC - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 24 20 VCE - Volts VCE - Volts 8 4 1.4 I C = 12A 1.2 1.0 I C = 6A 0.8 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.6 4.5 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 40 6.0 5.5 36 TJ = 25ºC 32 5.0 4.0 IC - Amperes VCE - Volts 28 4.5 I C = 24A 3.5 24 20 16 TJ = 125ºC 25ºC - 40ºC 12 3.0 12A 8 2.5 4 6A 2.0 0 5 7 9 11 13 15 VGE - Volts © 2021 Littelfuse, Inc. 17 19 21 23 25 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBT12N300 IXBH12N300 Not for New Design Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 18 36 TJ = - 40ºC 16 32 14 28 12 24 I F - Amperes g f s - Siemens 25ºC 125ºC 10 8 12 4 8 2 4 0 5 10 15 20 25 30 35 40 0 45 0 0.5 1 1.5 I C - Amperes 2 2.5 3 VF - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 16 10,000 f = 1 MHz 12 Capacitance - PicoFarads VCE = 1kV I C = 12A I G = 10mA 14 VGE - Volts TJ = 125ºC 16 6 0 TJ = 25ºC 20 10 8 6 4 1,000 C ies Coes 100 2 C res 0 10 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 100 Z(th)JC - K / W I C - Amperes 80 60 40 0.1 TJ = 125ºC RG = 30Ω dv / dt < 10V / ns 20 0 500 1000 1500 2000 2500 3000 0.01 0.00001 VCE - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 Not for New Design Fig. 16. Resistive Turn-on Rise Time vs. Collector Current Fig. 15. Resistive Turn-on Rise Time vs. Junction Temperature 600 600 RG = 10Ω , VGE = 15V VCE = 1250V 500 RG = 10Ω , VGE = 15V VCE = 1250V 500 t r - Nanoseconds t r - Nanoseconds TJ = 125ºC 400 I C = 24A 300 I C = 12A 200 100 400 300 200 TJ = 25ºC 100 0 0 25 35 45 55 65 75 85 95 105 115 125 6 8 10 12 14 TJ - Degrees Centigrade Fig. 17. Resistive Turn-on Switching Times vs. Gate Resistance td(on) 130 120 550 110 100 I C = 24A, 12A 450 90 400 80 350 70 300 60 250 20 30 40 50 60 70 80 90 180 I C = 12A 500 160 200 140 25 35 45 55 65 75 85 95 105 115 Fig. 19. Resistive Turn-off Switching Times vs. Collector Current Fig. 20. Resistive Turn-off Switching Times vs. Gate Resistance 340 td(off) 600 180 400 140 TJ = 125ºC, 25ºC 200 100 0 60 12 14 16 I C - Amperes © 2021 Littelfuse, Inc. 18 20 22 24 t f - Nanoseconds 220 td(off) 800 TJ = 125ºC, VGE = 15V VCE = 1250V 700 550 600 I C = 12A 500 500 450 400 400 300 I C = 24A 350 200 300 100 250 t d(off) - Nanoseconds 800 10 tf 650 t d(off) - Nanoseconds 260 8 900 600 1000 125 700 300 RG = 10Ω, VGE = 15V VCE = 1250V 150 I C = 24A TJ - Degrees Centigrade tf 170 400 RG - Ohms 1200 t f - Nanoseconds 190 600 100 1400 6 td(off) 300 50 10 24 t d(off) - Nanoseconds 600 500 tf RG = 10Ω, VGE = 15V VCE = 1250V 700 t f - Nanoseconds 650 22 200 140 t d(on) - Nanoseconds t r - Nanoseconds tr 20 800 150 TJ = 125ºC, VGE = 15V VCE = 1250V 18 Fig. 18. Resistive Turn-off Switching Times vs. Junction Temperature 750 700 16 I C - Amperes 0 10 20 30 40 50 60 70 80 90 100 RG - Ohms IXYS REF: B_12N300(4P)06-05-12 Not for New Design IXBT12N300 IXBH12N300 TO-268 Outline 1 - Gate 2,4 - Collector 3 - Emitter TO-247 Outline 1 - Gate 2,4 - Collector 3 - Emitter Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions and dimensions.