IXBT12N300HV

Not for New Design High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBA12N300HV IXBT12N300HV VCES = 3000V IC110 = 12A VCE(sat)  3.2V TO-263HV (IXBA..HV) G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 30 12 100 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 30 Clamped Inductive Load ICM = 98 1500 A V PC TC = 25°C 160 W -55 ... +150 °C TJ C (Tab) TJM 150 °C Tstg -55 ... +150 °C 260 °C 2.5 4.0 g g TSOLD Plastic Body for 10s Weight TO-263HV TO-268HV TO-268HV (IXBT..HV) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector Features  High Voltage Package  High Blocking Voltage Anti-Parallel Diode Low Conduction Losses   Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250µA, VGE = 0V 3000 VGE(th) IC = 250µA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC 2.8 TJ = 125°C © 2021 Littelfuse, Inc.  V TJ = 125°C = 12A, VGE = 15V, Note 1  3.5 Low Gate Drive Requirement High Power Density Applications: 5.0 V 25 1 µA mA ±100 nA 3.2 V  V     Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100496B(6/21) IXBA12N300HV IXBT12N300HV Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 6.5 IC = 12A, VCE = 10V, Note 1 10.8 S 1290 pF 56 pF Cres 19 pF Qg(on) 62 nC Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Qge IC = 12A, VGE = 15V, VCE = 1000V Qgc td(on) Resistive Switching Times, TJ = 25°C tr IC = 12A, VGE = 15V td(off) VCE = 1250V, RG = 10 tf td(on) Resistive Switching Times, TJ = 125°C tr IC = 12A, VGE = 15V td(off) VCE = 1250V, RG = 10 tf 13 nC 8.5 nC 64 ns 140 ns 180 ns 540 ns 65 ns 395 ns 175 ns 530 ns RthJC 0.78 °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 12A, VGE = 0V trr IF = 6A, VGE = 0V, -diF/dt = 100A/µs 1.4 µs IRM VR = 100V, VGE = 0V 21 A Note 1: 2.1 V Pulse test, t  300µs, duty cycle, d  2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBA12N300HV IXBT12N300HV Not for New Design Fig. 1. Output Characteristics @ TJ = 25ºC 24 VGE = 25V VGE = 25V 20V 15V 20 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 240 200 20V 160 I C - Amperes I C - Amperes 16 10V 12 15V 120 8 80 4 10V 40 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 30 1.8 VGE = 25V 20V 15V VGE = 15V 16 10V 12 I C = 24A 1.6 VCE(sat) - Normalized 20 I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 24 20 VCE - Volts VCE - Volts 8 4 1.4 I C = 12A 1.2 1.0 I C = 6A 0.8 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.6 4.5 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 40 6.0 5.5 36 TJ = 25ºC 32 5.0 4.0 I C - Amperes VCE - Volts 28 4.5 I C = 24A 3.5 24 20 16 TJ = 125ºC 25ºC - 40ºC 12 3.0 12A 8 2.5 4 6A 2.0 0 5 7 9 11 13 15 VGE - Volts © 2021 Littelfuse, Inc. 17 19 21 23 25 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBA12N300HV IXBT12N300HV Not for New Design Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 18 36 TJ = - 40ºC 16 32 14 28 12 24 I F - Amperes g f s - Siemens 25ºC 125ºC 10 8 12 4 8 2 4 0 5 10 15 20 25 30 35 40 0 45 0 0.5 1 1.5 I C - Amperes 2 2.5 3 VF - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 16 10,000 f = 1 MHz 12 Capacitance - PicoFarads VCE = 1kV I C = 12A I G = 10mA 14 VGE - Volts TJ = 125ºC 16 6 0 TJ = 25ºC 20 10 8 6 4 1,000 C ies Coes 100 2 C res 0 10 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 100 Z(th)JC - K / W I C - Amperes 80 60 40 0.1 TJ = 125ºC RG = 30Ω dv / dt < 10V / ns 20 0 500 1000 1500 2000 2500 3000 VCE - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBA12N300HV IXBT12N300HV Not for New Design Fig. 16. Resistive Turn-on Rise Time vs. Collector Current Fig. 15. Resistive Turn-on Rise Time vs. Junction Temperature 600 600 RG = 10Ω , VGE = 15V VCE = 1250V 500 RG = 10Ω , VGE = 15V VCE = 1250V 500 t r - Nanoseconds t r - Nanoseconds TJ = 125ºC 400 I C = 24A 300 I C = 12A 200 100 400 300 200 TJ = 25ºC 100 0 0 25 35 45 55 65 75 85 95 105 115 125 6 8 10 12 14 TJ - Degrees Centigrade Fig. 17. Resistive Turn-on Switching Times vs. Gate Resistance td(on) 140 110 100 I C = 24A, 12A 450 90 400 80 350 70 300 60 250 30 40 50 60 70 80 90 180 I C = 12A 500 160 200 140 25 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 19. Resistive Turn-off Switching Times vs. Collector Current Fig. 20. Resistive Turn-off Switching Times vs. Gate Resistance td(off) 600 180 400 140 TJ = 125ºC, 25ºC 200 100 0 60 12 14 16 I C - Amperes © 2021 Littelfuse, Inc. 18 20 22 24 td(off) 800 700 550 600 I C = 12A 500 500 450 400 400 300 I C = 24A 350 200 300 100 250 0 10 20 30 40 50 60 RG - Ohms 70 80 90 100 t d(off) - Nanoseconds 220 t d(off) - Nanoseconds 800 10 tf TJ = 125ºC, VGE = 15V VCE = 1250V 600 260 8 900 650 300 1000 125 700 t f - Nanoseconds tf RG = 10Ω, VGE = 15V VCE = 1250V 150 I C = 24A RG - Ohms 1200 170 400 100 340 6 600 300 50 20 1400 t f - Nanoseconds t f - Nanoseconds 550 190 t d(off) - Nanoseconds 120 10 24 td(off) RG = 10Ω, VGE = 15V VCE = 1250V 700 130 600 500 22 200 tf t d(on) - Nanoseconds t r - Nanoseconds 650 TJ = 125ºC, VGE = 15V VCE = 1250V 20 800 150 700 18 Fig. 18. Resistive Turn-off Switching Times vs. Junction Temperature 750 tr 16 I C - Amperes IXBA12N300HV IXBT12N300HV Not for New Design Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 10 25µs 1 100µs I D - Amperes I D - Amperes 100 10 25µs 1 100µs 1ms 0.1 TJ = 150ºC TC = 25ºC Single Pulse 0.1 DC 1ms TJ = 150ºC TC = 75ºC Single Pulse 10ms 100ms 10ms DC 0.01 1 10 100 1,000 10,000 VDS - Volts 100ms 0.01 1 10 100 1,000 10,000 VDS - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS REF: B_12N300 (4P) 2-16-21-D Not for New Design IXBA12N300HV IXBT12N300HV TO-263HV Outline 1 = Gate 2 = Emitter 3 = Collector TO-268HV Outline 1 - Gate 2 - Emitter 3 - Collector Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc.