IXBT16N170AHV

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA16N170AHV IXBT16N170AHV VCES = 1700V IC25 = 16A VCE(sat)  6.0V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1M 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms 16 10 40 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 33 Clamped Inductive Load ICM = 40 1350 A V tsc (SCSOA) VGE = 15V, VCE = 1200V, TJ = 125°C RG = 33, Non Repetitive 10 μs PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C  10..65 / 22..14.6 N/lb  2.5 4.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force (TO-263) Weight TO-263 TO-268 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC TO-268HV (IXBT) G E C (Tab) G = Gate E = Emitter = 10A, VGE = 15V, Note 1 Features   High Voltage Package High Blocking Voltage Anti-Parallel Diode Low Conduction Losses Advantages   5.0 5.5 V 50 1.5 μA mA Low Gate Drive Requirement High Power Density ±100 nA 6.0 V V Applications:      © 2013 IXYS CORPORATION, All Rights Reserved C = Collector Tab = Collector V TJ = 125°C TJ = 125°C C (Tab) Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100551(8/13) IXBA16N170AHV IXBT16N170AHV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 8.0 IC = 10A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 10A, VGE = 15V, VCE = 0.5 • VCES td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff TO-263HV Outline 12.5 S 1400 90 31 pF pF pF 65 13 22 nC nC nC 15 25 ns ns Inductive load, TJ = 25°C IC = 10A, VGE = 15V 160 50 1.2 VCE = 0.8 • VCES, RG = 10 Note 2 250 100 2.5 15 28 2.0 220 150 2.6 Inductive load, TJ = 125°C IC = 10A, VGE = 15V VCE = 0.8 • VCES, RG = 10 Note 2 RthJC PIN: 1 - Gate 2 - Emitter 3 - Collector ns ns mJ ns ns mJ ns ns mJ 0.83 °C/W TO-268HV Outline Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 10A, VGE = 0V trr IF = 10A, VGE = 0V, -diF/dt = 50A/μs 360 ns IRM VR = 100V, VGE = 0V 10 A Notes: 5.0 V PIN: 1 - Gate 2 - Emitter 3 - Collector 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.