IXBT2N250

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM IXBH2N250 IXBT2N250 VCES = 2500V IC110 = 2A VCE(sat)  3.80V Monolithic Bipolar MOS Transistor TO-268 (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1M 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 5 A IC110 TC = 110°C 2 A ICM TC = 25°C, 1ms 13 A SSOA VGE = 15V, TVJ = 125°C, RG = 47 ICM = 6 A (RBSOA) Clamped Inductive Load VCE  2000 V PC TC = 25°C 32 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in 6 4 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-247 TO-268 TO-247 (IXBH) G C E G = Gate S = Source G = Gate E = Emitter C (Tab) D = Drain Tab = Drain C = Collector Tab = Collector Features     High Blocking Voltage Integrated Anti-parallel Diode International Standard Packages Low Conduction Losses Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V V 5.5 V 10 A 100 μA 100 nA TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 2A, VGE = 15V, Note 1 3.15 TJ = 125C  4.08 3.80 V V  Applications      © 2017 IXYS CORPORATION, All Rights Reserved Low Gate Drive Requirement High Power Density Switched-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generator Capacitor Discharge Circuit AC Switches DS100160A(8/17) IXBH2N250 IXBT2N250 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 2A, VCE = 10V, Note 1 0.85 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 2A, VGE = 15V, VCE = 1kV Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching times, TJ = 25°C IC = 2A, VGE = 15V VCE = 2kV, RG = 47 Resistive Switching times, TJ = 125°C IC = 2A, VGE = 15V VCE = 2kV, RG = 47 TO-268 Outline 1.40 S 145 pF 8.7 pF 3.2 pF 10.6 nC 0.8 nC 6.2 nC 30 ns 180 ns 70 ns 182 ns 30 ns 280 ns 74 ns 178 ns RthJC Pins: 1 - Gate 2,4 - Collector 3 - Emitter 3.90 °C/W RthCS ° C/W 0.21 TO-247 Outline Reverse Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VF Characteristic Values Min. Typ. Max. IF = 2A, VGE = 0V, Note 1 trr IRM QRM 2.4 IF = 2A, VGE = 0V, -diF/dt = 100A/μs VR = 100V, VGE = 0V V 0.92 μs 9.80 A 4.50 μC Pins: 1 - Gate 2,4 - Collector 3 - Emitter Note 1. Pulse test, t  300μs, duty cycle, d  2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBH2N250 IXBT2N250 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 4.0 28 VGE = 25V VGE = 25V 20V 15V 3.5 24 20V 20 2.5 I C - Amperes I C - Amperes 3.0 10V 2.0 1.5 16 15V 12 8 1.0 10V 4 0.5 5V 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 4 8 12 20 24 28 32 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 2.0 4.0 VGE = 25V 20V 15V 3.5 VCE(sat) - Normalized 2.5 2.0 VGE = 15V 1.8 3.0 I C - Amperes 16 VCE - Volts VCE - Volts 10V 1.5 1.0 I C = 4A 1.6 1.4 I C = 2A 1.2 1.0 I C = 1A 0.8 0.5 5V 0.0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 25 50 75 VCE - Volts 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 6.5 9 o 6.0 TJ = 25 C 8 5.5 7 o TJ = - 40 C o 25 C o 125 C 6 4.5 I C - Amperes VCE - Volts 5.0 I C = 4A 4.0 3.5 2A 5 4 3 2 3.0 2.5 1 1A 0 2.0 5 7 9 11 13 15 17 19 21 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved 23 25 3 4 5 6 7 VGE - Volts 8 9 10 11 IXBH2N250 IXBT2N250 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 6 2.4 o TJ = - 40 C 5 2 4 I F - Amperes g f s - Siemens o 25 C 1.6 o 125 C 1.2 0.8 o TJ = 25 C 3 o TJ = 125 C 2 0.4 1 0 0 0 1 2 3 4 5 6 7 8 9 0 0.4 0.8 1.2 Fig. 9. Gate Charge 2 2.4 2.8 Fig. 10. Capacitance 16 1,000 f = 1 MHz VCE = 1kV 14 Capacitance - PicoFarads I C = 2A I G = 1mA 12 V GE - Volts 1.6 VF - Volts I C - Amperes 10 8 6 4 100 Cies Coes 10 2 Cres 0 1 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 7 10 6 5 Z(th)JC - K / W I C - Amperes 1 4 3 0.1 2 o TJ = 125 C RG = 47Ω dv / dt < 10V / ns 1 0 500 750 1000 1250 1500 1750 2000 2250 2500 0.01 0.00001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXBH2N250 IXBT2N250 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Collector Current 400 450 RG = 47Ω, VGE = 15V 350 RG = 47Ω, VGE = 15V 400 VCE = 2KV VCE = 2KV o t r - Nanoseconds t r - Nanoseconds 350 300 I C = 2A 250 200 I C = 4A TJ = 125 C 300 250 200 o TJ = 25 C 150 150 100 100 50 50 0 25 35 45 55 65 75 85 95 105 115 125 1.0 1.5 2.0 2.5 TJ - Degrees Centigrade tr 550 td(on) 65 320 TJ = 125 C, VGE = 15V 60 280 tf I C = 4A, 2A 40 30 200 25 40 20 280 0 120 160 200 240 70 80 60 I C = 4A 50 25 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 320 280 tf td(off) RG = 47Ω, VGE = 15V 240 120 360 110 320 160 80 120 70 80 o 60 o TJ = 25 C, 125 C 40 0 1.5 2.0 2.5 3.0 3.5 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 4.0 tf 270 td(off) o TJ = 125 C, VGE = 15V 240 VCE = 2KV 240 210 I C = 2A 200 180 160 150 120 120 I C = 4A 80 90 50 40 60 40 0 40 80 120 160 200 240 t d(off) - Nanoseconds 90 t d(off) - Nanoseconds 200 40 125 300 280 100 VCE = 2KV 1.0 80 I C = 2A 120 250 80 90 160 35 40 100 VCE = 2KV 200 300 150 t f - Nanoseconds t f - Nanoseconds 45 240 t f - Nanoseconds t r - Nanoseconds 400 110 t d(off) - Nanoseconds 50 t d(on) - Nanoseconds 450 td(off) RG = 47Ω, VGE = 15V 55 VCE = 2KV 350 4.0 120 o 500 3.5 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 600 3.0 I C - Amperes 30 280 RG - Ohms IXYS REF: B_2N250 (2P) 6-16-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.