IXBT6N170

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE(sat) ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90 TC = 90°C 6 A ICM TC = 25°C, 1ms 36 A SSOA VGE = 15V, TVJ = 125°C, RG = 24Ω ICM = 16 A (RBSOA) Clamped inductive load VCES ≤ 1350 V PC TC = 25°C 75 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. TJ TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-247) Weight TO-247 TO-268 6 4 g g G C C (TAB) E TO-268 (IXBT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z z z z High blocking voltage Integrated Anti-parallel diode International standard packages Low conduction losses Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 1700 VGE(th) IC = 250μA, VCE = VGE 2.5 I sCES VCE = 0.8 • VCES IGES VCE = 0V, VGE = ±20V VCE(sat) IC VGE = 0V 2.84 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved z V TJ = 125°C = 6A, VGE = 15V, Note 1 z 3.46 Low gate drive requirement High power density Applications: 5.5 V 10 μA 100 μA ±100 nA z 3.40 V z z z z Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) Laser generator Capacitor discharge circuit AC switches V DS99004C(10/08) IXBH6N170 IXBT6N170 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfS 2.0 IC = 6A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge 3.5 S 378 pF 25 pF 9 pF 17.0 nC 2.5 nC Qgc 9.6 nC td(on) 32 ns 59 ns 105 ns 690 ns 35 ns tr td(off) tf td(on) IC = 6A, VGE = 15V, VCE = 0.5 • VCES TO-247 (IXBH) Outline Resistive Switching times, TJ = 25°C IC = 6A, VGE = 15V VCE = 850V, RG = 24Ω tr Resistive Switching times, TJ = 125°C 69 ns td(off) IC = 6A, VGE = 15V 100 ns VCE = 850V, RG = 24Ω 600 ns tf RthJC 1.65 RthCS °C/W ° C/W 0.25 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXBT) Outline Reverse Diode Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VF IF = 6A, VGE = 0V, Note 1 3.0 V trr IF = 6A, VGE = 0V, -diF/dt = 100A/μs 1.08 μs IRM VR = 100V, VGE = 0V 12.0 A Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBH6N170 IXBT6N170 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 45 12 VGE = 15V 13V 11V 11 10 40 35 9 13V 8 9V IC - Amperes IC - Amperes VGE = 15V 7 6 5 4 7V 3 30 25 11V 20 15 9V 10 2 1 5 5V 7V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 2 4 6 8 12 14 16 18 20 1.7 VGE = 15V 13V 11V VGE = 15V 1.6 1.5 VCE(sat) - Normalized 10 IC - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 8 9V 6 7V 4 I 1.4 C = 12A 1.3 1.2 I 1.1 C = 6A 1.0 0.9 I 0.8 2 5V C = 3A 0.7 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 125 150 16 6.0 TJ = 25ºC 5.5 TJ = - 40ºC 25ºC 125ºC 14 12 I 4.5 C IC - Amperes 5.0 VCE - Volts 10 VCE - Volts VCE - Volts = 12A 4.0 3.5 6A 10 8 6 4 3.0 2.5 2 3A 0 2.0 5 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXBH6N170 IXBT6N170 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 5.5 18 TJ = - 40ºC 5.0 16 4.5 3.5 TJ = 25ºC 12 125ºC IF - Amperes g f s - Siemens 14 25ºC 4.0 3.0 2.5 2.0 TJ = 125ºC 10 8 6 1.5 4 1.0 2 0.5 0.0 0 0 2 4 6 8 10 12 14 16 0.6 0.8 1.0 1.2 1.4 Fig. 9. Gate Charge 1.8 2.0 Fig. 10. Capacitance 16 1,000 VCE = 850V 14 I C = 42A Cies Capacitance - PicoFarads 12 VGE - Volts 1.6 VF - Volts IC - Amperes I G = 10mA 10 8 6 4 100 Coes 10 Cres 2 f = 1 MHz 1 0 0 2 4 6 8 10 12 14 16 0 18 5 10 15 20 25 30 35 QG - NanoCoulombs VCE - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 26 40 10.0 24 22 20 Z(th)JC - ºC / W IC - Amperes 18 16 14 12 10 1.0 8 6 TJ = 125ºC 4 RG = 25Ω dV / dt < 10V / ns 2 0 200 400 600 800 1000 1200 1400 1600 1800 VCE - Volts 0.1 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: B_6N170(2N)10-09-08 IXBH6N170 IXBT6N170 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 280 280 RG = 24Ω 240 t r - Nanoseconds I 160 t r - Nanoseconds VCE = 850V 200 RG = 24Ω 240 VGE = 15V = 12A C 120 80 I 40 C = 6A VGE = 15V VCE = 850V 200 160 TJ = 125ºC 120 80 TJ = 25ºC 40 0 0 25 35 45 55 65 75 85 95 105 115 3 125 4 5 6 7 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 90 60 I C = 12A, 6A 50 200 40 100 30 0 30 60 90 120 RG = 10Ω, VGE = 15V 800 150 180 210 240 270 700 I C = 6A 600 100 500 90 400 300 20 300 25 35 45 1000 RG = 10Ω, VGE = 15V td(off) - - - - 140 700 100 600 90 500 80 TJ = 125ºC, 25ºC 105 115 70 125 tf td(off) - - - - 700 TJ = 125ºC, VGE = 15V 900 600 VCE = 850V 800 500 I C = 6A 700 400 600 I C = 12A 300 500 200 400 100 70 300 60 200 50 8 95 t d(off) - Nanoseconds 110 t d(off) - Nanoseconds 120 800 7 85 800 1000 130 VCE = 850V 6 75 1100 t f - Nanoseconds tf t f - Nanoseconds 1100 5 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 150 4 55 TJ - Degrees Centigrade 1200 3 80 I C = 12A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 400 120 110 RG - Ohms 900 td(off) - - - - t d(off) - Nanoseconds 70 400 0 12 VCE = 850V VCE = 850V 300 11 130 tf 80 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 500 10 900 t f - Nanoseconds tr 9 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 700 600 8 IC - Amperes 9 10 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 11 12 300 0 30 60 90 120 150 180 210 240 270 0 300 RG - Ohms IXYS REF: B_6N170(2N)10-09-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.