IXBX25N250

IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE(sat) ≤ 3.3V Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms 55 25 180 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 4.7Ω ICM = 80 A (RBSOA) Clamped Inductive Load VCES ≤ 2000 V PC TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 20..120 / 4.5..27 N/lb. 6 g TJ TL TSOLD 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10 seconds FC Mounting Force Weight PLUS247TM G C E G = Gate C = Collector Tab E = Emitter Tab = Collector Features z z z High Blocking Voltage International Standard Package Low Conduction Losses Advantages z z Low Gate Drive Requirement High Power Density Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 2500 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC90, VGE = 15V, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved z V 5.0 V z z 50 μA 3 mA TJ = 125°C TJ = 125°C z Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generator Capacitor Discharge Circuit AC Switches 3.4 ±100 nA 3.3 V V DS100044A(10/10) IXBX25N250 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 25A, VCE = 10V, Note 1 11 Cies Coes Qg Qge IC = 25A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf 18 S 2450 pF 96 pF 35 pF VCE = 25V, VGE = 0V, f = 1MHz Cres Resistive Switching times, TJ = 25°C IC = 25A, VGE = 15V VCE = 1250V, RG = 4.7Ω Resistive Switching times, TJ = 125°C IC = 25A, VGE = 15V VCE = 1250V, RG = 4.7Ω 103 nC 17 nC 43 nC 55 ns 240 ns 145 ns 640 ns 54 ns 640 ns 140 ns 510 ns RthJC 0.42 RthCS PLUS 247TM (IXBX) Outline °C/W ° C/W 0.15 Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 25A, VGE = 0V trr IF = 25A, -diF/dt = 100A/μs IRM VR = 100V, VGE = 0V Characteristic Values Min. Typ. Max. 2.3 V 1.6 μs 37.2 A Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. *Additional provisions for lead to lead voltage isolation are required at VDS > 1200V. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBX25N250 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 50 VGE = 25V 20V 15V 45 40 200 IC - Amperes 35 IC - Amperes VGE = 25V 20V 250 10V 30 25 20 15V 150 100 15 10V 10 50 5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 2 4 6 8 50 14 16 18 20 1.8 VGE = 25V 20V 15V 45 40 VGE = 15V 1.6 VCE(sat) - Normalized 35 IC - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 10V 30 25 20 15 10 1.4 I C = 50A 1.2 I C = 25A 1.0 I 0.8 5 C = 12.5A 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Breakdown & Threshold Voltages vs. Junction Temperature 150 1.15 6.0 TJ = 25ºC 1.10 BVCES & VGE(th) - Normalized 5.5 5.0 VCE - Volts 10 VCE - Volts VCE - Volts 4.5 I 4.0 C = 50A 3.5 25A 3.0 BVCES 1.05 1.00 0.95 0.90 VGE(th) 0.85 2.5 12.5A 2.0 0.80 5 7 9 11 13 15 17 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 19 21 23 25 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXBX25N250 Fig. 7. Input Admittance Fig. 8. Transconductance 30 60 TJ = - 40ºC 50 25 40 20 g f s - Siemens IC - Amperes 25ºC 30 TJ = 125ºC 25ºC - 40ºC 20 10 125ºC 15 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 5 10 15 20 25 VGE - Volts 70 14 60 12 50 10 TJ = 25ºC 45 50 55 60 65 VCE = 1kV I C = 25A I G = 10mA 8 6 TJ = 125ºC 20 4 10 2 0 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 3.0 10 20 30 VF - Volts 40 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 12. Reverse-Bias Safe Operating Area Fig. 11. Capacitance 90 10,000 f = 1 MHz 80 70 Cies 1,000 60 IC - Amperes Capacitance - PicoFarads 40 Fig. 10. Gate Charge 16 VGE - Volts IF - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 35 IC - Amperes 80 40 30 Coes 100 Cres 10 0 5 10 15 20 25 30 35 40 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 50 40 30 20 TJ = 125ºC 10 RG = 4.7Ω dv / dt < 10V / ns 0 250 500 750 1000 1250 1500 VCE - Volts 1750 2000 2250 2500 IXBX25N250 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 800 800 RG = 4.7Ω, VGE = 15V 700 RG = 4.7Ω, VGE = 15V 700 VCE = 1250V VCE = 1250V 600 I 500 C t r - Nanoseconds t r - Nanoseconds 600 = 25A I 400 C = 50A 300 TJ = 125ºC 500 400 300 200 200 TJ = 25ºC 100 0 100 25 35 45 55 65 75 85 95 105 115 10 125 15 20 25 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - 45 50 180 tf 800 TJ = 125ºC, VGE = 15V 700 80 600 60 VCE = 1250V 700 t f - Nanoseconds I C = 25A, 50A 170 160 600 150 500 140 I C = 25A 400 130 300 120 I C = 50A 200 500 8 12 16 20 24 28 32 36 40 44 48 110 100 40 4 25 52 35 45 55 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 75 85 95 105 115 100 125 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 1100 700 200 1000 tf td(off) - - - - RG = 4.7Ω, VGE = 15V 180 td(off) - - - - TJ = 125ºC, VGE = 15V 600 800 VCE = 1250V 500 700 160 500 140 300 120 300 100 200 600 I C = 25A 400 400 I C = 50A 200 TJ = 125ºC, 25ºC 100 10 15 20 25 30 35 40 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 45 50 0 4 8 12 16 20 24 28 32 RG - Ohms 36 40 44 48 52 t d(off) - Nanoseconds t d(off) - Nanoseconds VCE = 1250V t f - Nanoseconds tf t f - Nanoseconds 65 TJ - Degrees Centigrade RG - Ohms 900 t d(off) - Nanoseconds 100 t d(on) - Nanoseconds 800 td(off) - - - - RG = 4.7Ω, VGE = 15V 120 VCE = 1250V t r - Nanoseconds 40 900 140 tr 35 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 1000 900 30 IC - Amperes IXBX25N250 Fig. 19. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_25N250(6P)9-30-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.