IXBX55N300

IXBK55N300 IXBX55N300 High Voltage, High Gain BiMOSFETTM VCES IC110 = 3000V = 55A  3.2V VCE(sat) Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ±25 V VGEM Transient ±35 V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 130 55 600 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 2 ICM = 110 A (RBSOA) Clamped Inductive Load 1500 V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 10, VCE = 1250V, Non-Repetitive 10 µs PC TC = 25°C 625 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque (TO-264) Mounting Force (PLUS247) Weight TO-264 PLUS247 300 °C 1.13/10 20..120/4.5..27 Nm/lb.in N/lb 10 6 g g G C E PLUS247 (IXBX) G     IC = 1mA, VGE = 0V 3000 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V 5.0 VCE = 0V, VGE = ± 25V VCE(sat) IC = 55A, VGE = 15V, Note 1 TJ = 125C © 2021 Littelfuse, Inc. V 50 µA TJ = 125C IGES  V 3 mA ±200 nA 3.2 V V E = Emitter Tab = Collector High Blocking Voltage International Standard Packages Low Conduction Losses High Current Handling Capability MOS Gate Turn-On - Drive Simplicity Easy to Mount Space Savings High Power Density Applications     2.7 3.3 Tab E Advantages  BVCES C Features  Characteristic Values Min. Typ. Max. G G = Gate C = Collector  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Tab Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits Laser Generators DS100158B(7/21) IXBK55N300 IXBX55N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 55A, VCE = 10V, Note 1 32 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 55A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 110A, VGE = 15V VCE = 1250V, RG = 2 Resistive Switching Times, TJ = 125°C IC = 110A, VGE = 15V VCE = 1250V, RG = 2 50 S 7300 pF 275 pF 83 pF 335 nC 47 nC 130 nC 54 ns 307 ns 230 ns 268 ns 52 ns 585 ns 215 ns 260 ns RthJC 0.20 °C/W RthCS 0.15 °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 55A, VGE = 0V, Note 1 trr IF = 28A, VGE = 0V, -diF/dt = 100A/µs 1.9 µs IRM VR = 100V, VGE = 0V 54 A Note 2.5 V 1: Pulse Test, t  300µs, Duty Cycle, d  2%. Additional provisions for lead-to-lead isolation are required at V CE > 1250V. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXBK55N300 IXBX55N300 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 120 300 VGE = 25V 20V 15V 100 V GE = 25V 20V 15V 80 I C - Amperes I C - Amperes 250 10V 60 40 200 10V 150 100 20 50 5V 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0 2 3 4 5 6 VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 120 7 8 125 150 1.8 V GE = 25V 20V 15V VGE = 15V 1.6 VCE(sat) - Normalized 100 80 I C - Amperes 1 VCE - Volts 10V 60 40 I C = 110A 1.4 1.2 I C = 55A 1.0 I C = 27.5A 20 0.8 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.6 5 -50 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 5.5 TJ = 25ºC 5.0 160 140 120 4.0 I C - Amperes VCE - Volts 4.5 I C = 110A 3.5 100 80 TJ = 125ºC 25ºC - 40ºC 60 55A 3.0 40 2.5 20 27.5A 0 2.0 5 6 7 8 9 10 VGE - Volts © 2021 Littelfuse, Inc. 11 12 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBK55N300 IXBX55N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 180 100 TJ = - 40ºC 90 160 80 140 25ºC 60 120 I F - Amperes g f s - Siemens 70 125ºC 50 40 TJ = 25ºC 100 TJ = 125ºC 80 60 30 40 20 20 10 0 0 0 20 40 60 80 100 120 140 160 180 0.4 200 0.6 0.8 1.0 1.2 1.4 1.6 I C - Amperes 2.4 2.6 2.8 3.0 f = 1 MHz VCE = 1000V I C = 55A I G = 10mA Capacitance - PicoFarads VGE - Volts 2.2 100,000 16 12 2.0 Fig. 10. Capacitance Fig. 9. Gate Charge 14 1.8 VF - Volts 10 8 6 4 10,000 Cies 1,000 C oes 100 Cres 2 10 0 0 50 100 150 200 250 300 0 350 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 120 100 0.1 Z(th)JC - K / W I C - Amperes 80 60 40 0.01 TJ = 125ºC RG = 2Ω dv / dt < 10V / ns 20 0 250 750 1250 1750 2250 2750 VCE - Volts Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBK55N300 IXBX55N300 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 700 700 RG = 2Ω , VGE = 15V VCE = 1250V 600 600 500 t r - Nanoseconds t r - Nanoseconds TJ = 125ºC I C = 220A 400 I C = 110A 300 500 RG = 2Ω , VGE = 15V VCE = 1250V 400 TJ = 25ºC 300 200 200 25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 120 720 80 620 70 I C = 110A 60 580 560 3 4 5 6 7 8 9 10 11 12 13 14 280 260 240 280 220 I C = 110A 270 200 260 180 I C = 220A 250 160 50 240 140 40 230 120 25 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 360 320 tf 340 RG = 2Ω, VGE = 15V VCE = 1250V td(off) 300 240 280 220 260 200 240 180 160 TJ = 125ºC, 25ºC 200 140 60 80 100 120 140 I C - Amperes © 2021 Littelfuse, Inc. 160 180 200 220 680 td(off) 600 320 520 I C = 110A 300 440 280 360 I C = 220A 260 280 240 200 220 120 2 3 4 5 6 7 8 9 RG - Ohms 10 11 12 13 14 15 t d(off) - Nanoseconds 300 t d(off) - Nanoseconds 260 125 TJ = 125ºC, VGE = 15V VCE = 1250V 280 320 220 tf 340 t f - Nanoseconds 360 40 td(off) 290 15 380 t f - Nanoseconds t f - Nanoseconds I C = 220A 2 tf t d(off) - Nanoseconds 90 600 220 RG = 2Ω, VGE = 15V VCE = 1250V 300 100 660 640 200 300 310 110 t d(on) - Nanoseconds t r - Nanoseconds td(on) TJ = 125ºC, VGE = 15V VCE = 1250V 680 180 320 120 tr 160 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 700 140 I C - Amperes TJ - Degrees Centigrade IXBK55N300 IXBX55N300 Fig. 19. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 20. Forward-Bias Safe Operating Area @ TC = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 25µs 25µs 10 I D - Amperes I D - Amperes 100µs 1ms 1 100µs 10 1ms 1 10ms TJ = 150ºC TC = 25ºC Single Pulse 0.1 100ms DC 0.01 10ms TJ = 150ºC TC = 75ºC Single Pulse 0.1 100ms DC 0.01 1 10 100 1,000 10,000 VDS - Volts 1 10 100 1,000 10,000 VDS - Volts Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: B_55N300 (8T) 6-23-21 IXBK55N300 IXBX55N300 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C AM b b2 c e = Gate 2,4 = Collector 3 = Emitter 1 0P1 BACK SIDE A K M D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 b e b2 3 PLCS C b4 1 = Gate 2,4 = Collector 3 = Emitter © 2021 Littelfuse, Inc. 2 PLCS 2 PLCS IXBK55N300 IXBX55N300 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions, and dimensions.