IXBX64N250

High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE(sat) Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ±25 V VGEM Transient ±35 V IC25 TC = 25°C (Chip Capability) 156 A ILRMS IC100 ICM Lead Current Limit, RMS TC = 110°C TC = 25°C, 1ms 120 64 600 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 160 A (RBSOA) Clamped Inductive Load TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 5Ω, VCE = 1250V, Non-Repetitive PC TC = 25°C C E Tab PLUS247TM (IXBX) G G = Gate E = Emitter VCE < 0.8 • VCES 10 μs 735 W -55 ... +150 °C Features TJM 150 °C z Tstg -55 ... +150 °C z 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque (TO-264 ) Mounting Force (PLUS247 ) Weight TO-264 PLUS247 z z Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 2500 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 25V VCE(sat) IC V 50 μA TJ = 125°C = IC110, VGE = 15V, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 6 mA ±200 nA 2.5 3.1 3.0 Tab C = Collector Tab = Collector High Blocking Voltage Low Switching Losses High Current Handling Capability Anti-Parallel Diode z High Power Density Low Gate Drive Requirement Applications V 5.0 E Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C z Switch-Mode and Resonant-Mode Power Supplies z Uninterrupted Power Supplies (UPS) z Capacitor Discharge Circuits z Laser Generators V V DS99832B(08/11) IXBK64N250 IXBX64N250 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = IC110, VCE = 10V, Note 1 40 TO-264 Outline 72 S 8900 pF 345 pF Cres 118 pF Qg 400 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = IC110, VGE = 15V, VCE = 600V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 128A, VGE = 15V, tp = 1μs VCE = 1250V, RG = 1Ω Resistive Switching Times, TJ = 125°C IC = 128A, VGE = 15V, tp = 1μs VCE = 1250V, RG = 1Ω 46 nC 155 nC 49 ns 318 ns 232 ns 170 ns 54 ns 578 ns 222 ns 175 ns RthJC 0.17 °C/W RthCS 0.15 °C/W Terminals: 1 - Gate 2 - Collector 3 - Emitter 4 - Collector Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. Inches Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = IC110, VGE = 0V, Note 1 3.0 V trr IF = IC110, VGE = 0V, -diF/dt = 650A/μs 160 ns IRM VR = 600V, VGE = 0V 480 A Terminals: 1 - Gate 2 - Collector 3 - Emitter Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. Additional provisions for lead-to-lead isolation are required at VCE >1200V. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBK64N250 IXBX64N250 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Output Characteristics @ T J = 125ºC 270 VGE = 25V 20V 15V 300 210 250 180 10V 200 IC - Amperes IC - Amperes VGE = 25V 20V 15V 240 150 150 10V 120 90 100 60 50 30 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 23 25 VCE - Volts VCE - Volts Fig. 3. Dependence of VCE(sat) on Junction Temperature Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 2.0 6.5 VGE = 15V 1.8 6.0 TJ = 25ºC I C = 256A 1.4 I 1.2 C I 5.0 VCE - Volts VCE(sat) - Normalized 5.5 1.6 = 128A C 4.5 = 256A 128A 64A 4.0 3.5 1.0 3.0 I 0.8 C = 64A 2.5 2.0 0.6 -50 -25 0 25 50 75 100 125 5 150 7 9 11 Fig. 5. Breakdown & Threshold Voltages vs. Junction Temperature 15 17 19 21 Fig. 6. Input Admittance 120 1.15 1.10 100 BVCES 1.05 IC - Amperes BVCES & VGE(th) - Normalized 13 VGE - Volts TJ - Degrees Centigrade 1.00 0.95 TJ = 125ºC 25ºC - 40ºC 80 60 40 0.90 VGE(th) 20 0.85 0.80 0 -55 -35 -15 5 25 45 65 TJ - Degrees Centigrade © 2011 IXYS CORPORATION, All Rights Reserved 85 105 125 3.5 4.0 4.5 5.0 VGE - Volts 5.5 6.0 6.5 7.0 IXBK64N250 IXBX64N250 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 200 100 TJ = - 40ºC 90 180 160 25ºC 70 60 140 IF - Amperes g f s - Siemens 80 125ºC 50 40 100 TJ = 125ºC 80 30 60 20 40 10 20 0 TJ = 25ºC 120 0 0 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 1.8 2.0 2.2 2.4 2.6 2.8 Fig. 10. Capacitance Fig. 9. Gate Charge 16 100,000 14 VCE = 600V 12 I G = 10mA f = 1 MHz I C = 64A Capacitance - PicoFarads VGE - Volts 1.6 VF - Volts IC - Amperes 10 8 6 4 Cies 10,000 1,000 Coes 100 Cres 2 10 0 0 50 100 150 200 250 300 350 400 0 450 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Reverse-Bias Safe Operating Area 1000 180 VCE(sat) Limit 160 140 100 IC - Amperes IC - Amperes 120 100 80 10 60 40 TJ = 125ºC 20 RG = 1Ω dv / dt < 10V / ns 0 250 25µs 100µs TJ = 150ºC TC = 25ºC Single Pulse 1ms 1 500 750 1000 1250 1500 1750 2000 2250 2500 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VCE - Volts 1,000 10,000 IXBK64N250 IXBX64N250 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 650 650 RG = 1Ω , VGE = 15V 600 600 VCE = 1250V 550 t r - Nanoseconds t r - Nanoseconds 550 500 I C = 256A, 128A, 64A 450 400 350 TJ = 125ºC 500 450 RG = 1Ω , VGE = 15V 400 VCE = 1250V 350 300 300 TJ = 25ºC 250 200 250 25 35 45 55 65 75 85 95 105 115 60 125 80 100 120 140 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - I C = 128A 60 I C = 64A 550 55 500 t f - Nanoseconds t r - Nanoseconds 65 t d ( o n ) - Nanoseconds I C = 256A 50 450 45 1 2 3 4 5 6 7 8 9 tf 230 220 225 200 190 195 180 180 170 165 160 25 290 400 270 350 35 45 t f - Nanoseconds 230 230 210 190 TJ = 125ºC, 25ºC 170 140 120 140 160 55 65 75 85 95 105 115 150 125 180 200 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 220 240 700 600 I C = 64A, 128A, 256A 300 500 250 400 200 300 150 170 100 150 260 50 tf 200 td(off) - - - - TJ = 125ºC, VGE = 15V 100 VCE = 1250V 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d ( o f f ) - Nanoseconds 260 t d ( o f f ) - Nanoseconds 250 VCE = 1250V 100 210 I C = 128A, 256A Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 1Ω, VGE = 15V 80 240 VCE = 1250V 210 10 t f - Nanoseconds td(off) - - - - tf 60 255 TJ - Degrees Centigrade 350 200 270 RG = 1Ω, VGE = 15V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 290 285 td(off) - - - - RG - Ohms 320 260 300 240 70 600 240 t d ( o f f ) - Nanoseconds TJ = 125ºC, VGE = 15V 650 220 I C = 64A 250 75 VCE = 1250V 700 200 260 80 tr 180 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 800 750 160 IC - Amperes IXBK64N250 IXBX64N250 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: B_64N250(9P)8-12-11B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.