IXBX75N170A

BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE(sat) tfi(typ) = =  = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1M 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms 110 65 300 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 1 ICM = 100 A (RBSOA) Clamped Inductive Load PC TC = 25°C G C PLUS247TM (IXBX) VCE < 0.8 • VCES G 1040 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque (TO-264 ) Mounting Force (PLUS247 ) Weight TO-264 PLUS247 Tab E C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features      International Standard Packages High Blocking Voltage Fast Switching High Current Handling Capability Anti-Parallel Diode Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 1.5mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V VCE = 0V, VGE = ± 20V VCE(sat) IC  V 5.5 = 42A, VGE = 15V, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved 3 mA ±100 nA 4.95 5.15 6.00 High Power Density Low Gate Drive Requirement Intergrated Diode Can Be Used for Protection V 50 μA TJ = 125C IGES  V V Applications     Switch-Mode and Resonant-Mode Power Supplies UPS AC Motor Drives Substitutes for High Voltage MOSFET DS100166A(8/16) IXBK75N170A IXBX75N170A Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 42A, VCE = 10V, Note 1 28 TO-264 AA ( IXBK) Outline 48 S 7200 pF 450 pF Cres 150 pF Qg 358 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 42A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri td(off) tfi Eoff Inductive load, TJ = 25°C IC = 42A, VGE = 15V VCE = 0.8 • VCES, RG = 1 Note 2 46 nC 148 nC 26 40 418 60 3.80 ns ns ns ns mJ 110 7.00 27 38 420 175 6.35 Inductive load, TJ = 125°C IC = 42A, VGE = 15V VCE = 0.8 • VCES, RG = 1 Note 2 RthJC ns ns ns ns mJ 0.12 °C/W RthCS 0.15 °C/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Characteristic Values Min. Typ. Max VF IF = 42A, VGE = 0V, Note 1 trr IRM QRM IF = 42A, VGE = 0V, -diF/dt = 100A/μs 5.5 360 19 3.5 VR = 100V, VGE = 0V V ns A μC Terminals: 1. Pulse test, t  300μs; duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Additional provisions for lead-to-lead isolation are required at VCE >1200V. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Dim. 6,404,065 B1 6,534,343 6,583,505 1 - Gate 2 - Collector 3 - Emitter Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 b2 1.14 1.91 2.92 1.40 2.13 3.12 .045 .075 .115 .055 .084 .123 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 Inches Min. Max. PLUS 247TM (IXBX) Outline Reverse Diode Notes: PINS: 1 - Gate 2,4 - Collector 3 - Emitter 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBK75N170A IXBX75N170A Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 90 240 VGE = 25V 15V 11V 80 200 70 11V 9V 60 9V 160 I C - Amperes I C - Amperes VGE = 25V 15V 50 7V 40 30 120 80 7V 20 40 10 5V 5V 0 0 0 1 2 3 4 5 6 7 8 0 2 4 6 8 90 1.6 VGE = 25V 15V 11V 9V 1.4 60 I C - Amperes 14 16 18 50 7V 40 125 150 VGE = 15V 1.5 VCE(sat) - Normalized 70 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 80 10 VCE - Volts VCE - Volts 30 20 I C = 84A 1.3 1.2 1.1 1.0 I C = 42A 0.9 0.8 10 I C = 21A 0.7 5V 0.6 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 10.0 50 75 100 TJ - Degrees Centigrade Fig. 6. Input Admittance 180 160 TJ = 25ºC 9.0 140 I C - Amperes VCE - Volts 8.0 I C = 84A 7.0 6.0 42A 120 100 80 TJ = 125ºC 25ºC - 40ºC 60 5.0 40 4.0 20 21A 3.0 0 6 7 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 IXBK75N170A IXBX75N170A Fig. 7. Transconductance Fig. 8. Gate Charge 100 16 TJ = - 40ºC 90 VCE = 850V 14 80 25ºC I C = 42A I G = 10mA 12 125ºC 60 VGE - Volts g f s - Siemens 70 50 40 10 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 220 0 40 80 I C - Amperes 120 160 200 240 280 320 360 QG - NanoCoulombs Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Capacitance 100,000 140 f = 1 MHz 100 Capacitance - PicoFarads 120 TJ = 25ºC I F - Amperes J TJ = 125ºC 80 60 40 Cies 10,000 1,000 Coes 100 Cres 20 0 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 5 10 15 20 25 30 35 40 VCE - Volts VF - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 120 100 0.1 Z(th)JC - K / W I C - Amperes 80 60 40 0.01 TJ = 125ºC 20 RG = 1Ω dV / dt < 10V / ns 0 200 400 600 800 1000 1200 1400 1600 1800 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBK75N170A IXBX75N170A Fig. 13. Inductive Turn-off Switching Energy Loss vs. Gate Resistance 15 14 RG = 1ΩVGE = 15V 12 VCE = 1360V VCE = 1360V 10 12 E off - MilliJoules E off - MilliJoules 14 TJ = 125ºC , VGE = 15V 13 Fig. 14. Inductive Turn-off Switching Energy Loss vs. Collector Current I C = 84A 11 10 9 8 TJ = 125ºC 8 6 TJ = 25ºC 4 I C = 42A 7 2 6 0 5 1 2 3 4 5 6 7 8 9 20 10 30 40 50 Fig. 15. Inductive Turn-off Switching Energy Loss vs. Junction Temperature RG = 1ΩVGE = 15V 200 t f i - Nanoseconds I C = 84A 8 6 I C = 42A 4 2 t d(off) 25 650 VCE = 1360V 180 600 160 550 I C = 42A 140 500 120 450 I C = 84A 100 400 80 350 35 45 55 65 75 85 95 105 115 300 1 125 2 3 4 560 RG = 1Ω, VGE = 15V TJ = 125ºC VCE = 1360V 440 TJ = 25ºC 400 380 0 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved I C = 84A 80 280 90 420 120 40 80 VCE = 1360V 400 320 70 440 I C = 42A 40 60 10 160 360 0 t d(off) RG = 1Ω, VGE = 15V 200 80 50 9 360 340 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 320 125 t d(off) - Nanoseconds 160 t d(off) - Nanoseconds 480 40 8 460 tfi 240 520 200 30 7 280 600 t d(off) t f i - Nanoseconds 280 6 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 5 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 700 60 0 20 750 TJ = 125ºC, VGE = 15V 10 120 90 t d(off) - Nanoseconds E off - MilliJoules tfi 220 VCE = 1360V 12 240 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 240 16 320 70 I C - Amperes RG - Ohms 14 60 IXBK75N170A IXBX75N170A Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri 140 120 60 t d(on) tri 55 100 TJ = 125ºC, VGE = 15V 80 40 60 35 I C = 42A 40 30 20 25 0 20 1 2 3 4 5 6 7 8 9 t r i - Nanoseconds t r i - Nanoseconds 45 32 80 30 60 28 TJ = 125ºC, 25ºC 40 26 20 24 0 10 t d(on) - Nanoseconds 100 t d(on) RG = 1Ω, VGE = 15V 50 I C = 84A 34 VCE = 1360V t d(on) - Nanoseconds VCE = 1360V 120 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 22 20 30 40 50 60 70 80 90 I C - Amperes RG - Ohms Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 140 34 tri 120 t d(on) 32 RG = 1Ω, VGE = 15V t r i - Nanoseconds 100 30 I C = 84A 80 28 60 26 I C = 42A 40 t d(on) - Nanoseconds VCE = 1360V 24 20 25 35 45 55 65 75 85 95 105 115 22 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: B_75N170A(8T)6-30-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.