IXDH35N60BD1

IXDH35N60BD1 VCES = 600 V IC25 = 60 A VCE(sat) typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage TO-247 AD Replacements: IXXH30N60B3D1 / IXYP30N65B3D1 IXXH30N65B4D1 / IXXH30N65B4D1 C G G C E C (TAB) E Gate, Emitter, Collector, Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ 600 V VGES Continuous ±20 VGEM Transient ±30 IC25 TC = 25°C IC90 TC = 90°C ICM TC = 90°C, tp =1 ms RBSOA VGE = ±15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH tSC (SCSOA) VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 10 Ω, non repetitive PC TC = 25°C Features ● ● ● V 60 A 35 A 70 A ICM = 110 VCEK < VCES A 10 µs 250 80 W W ● ● -55 ... +150 °C -40 ... +150 °C 300 °C 0.4 - 0.6 0.8 - 1.2 Nm Nm ● ● ● IGBT Diode A Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC ICES VCE = VCES VCE = 0 V, VGE = ± 20 V VCE(sat) IC g 600 ● ● ● AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies V 3 TJ = 25°C TJ = 125°C = 35 A, VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved Typical Applications ● 6 Space savings High power density Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 0.7 mA, VCE = VGE IGES ● ● TO-220 TO-247 PH Weight Advantages ● SE Tstg NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package -O U V ● TJ TAB = Collector T Symbol 5 1 V 0.1 mA mA ± 500 nA 2.2 2.7 V 20190131a 1-4 IXDH35N60BD1 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = 35 A, VGE = 15 V, VCE = 480 V td(on) tr td(off) Inductive load, TJ = 125°C tf IC = 35 A, VGE = ±15 V, VCE = 300 V, RG = 10 Ω Eon Eoff 1600 pF 150 pF 90 pF 120 nC 30 ns 45 ns 320 ns 70 ns 1.6 mJ 0.8 mJ RthJC 0.5 K/W TO 247 Package with heatsink compound TO 220 Package with heatsink compound Reverse Diode (FRED) [D1 version only] 0.25 0.5 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. T RthCH RthCH Symbol Conditions VF IF = 35 A, VGE = 0 V IF = 35 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 15 A, -diF/dt = 400 A/µs, VR = 300 V 13 A trr VGE = 0 V, TJ = 125°C 90 ns trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns 2.4 45 25 SE RthJC A E V V -O U 2.1 1.6 A2 ØP A A 1.6 K/W Ø P1 D2 S A Q D1 D PH 2x E2 1 2 4 3 L1 E1 L 2x b2 3x b b4 C A1 TO-247 AD Outline Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 2x e IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 20190131a 2-4 IXDH35N60BD1 80 80 VGE= 17V 15V 13V A 70 11V 9V IC 60 IC 9V 60 50 50 40 40 30 30 20 20 10 10 TJ = 25°C 0 0 1 2 3 4 0 7 V 5 6 VCE TJ = 125°C 0 1 2 3 4 5 6 7 V VCE Fig. 1 Typ. output characteristics Fig. 2 80 A 70 70 A 60 IF 60 T 80 Typ. output characteristics -O U IC 11V VGE= 17V 15V 13V A 70 50 50 40 40 30 30 TJ = 125°C TJ = 25°C 20 20 TJ = 125°C TJ = 25°C 10 10 VCE = 20V 0 4 5 6 7 8 0 0 9 V 10 SE 3 1 VGE Fig. 3 Typ. transfer characteristics A 15 V 12 PH VGE 2 VF V 3 Fig. 4 Typ. forward characteristics of free wheeling diode 120 30 trr 25 A ns 20 80 trr IRM 9 15 6 3 40 10 VCE = 480V IC = 30A TJ = 125°C VR = 300V IF = 15A IRM 5 IXDx35N60B 0 0 0 20 40 60 80 100 120 nC QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 0 200 400 600 800 A/µs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 20190131a 3-4 IXDH35N60BD1 4 Eon mJ VCE = 300V VGE = ±15V 3 RG = 10Ω TJ = 125°C td(on) 80 2.0 ns mJ 60 1.5 t ns td(off) 300 t Eoff Eon 2 Eoff 400 1.0 40 200 VCE = 300V VGE = ±15V tr 1 RG = 10Ω TJ = 125°C 0.5 20 tf 0 10 0.0 10 0 20 30 40 60 A 50 0 20 30 40 50 IC 2.0 60 td(on) mJ ns 45 Eon Eon 1.5 1.0 VCE = 300V VGE = ±15V IC = 35A TJ = 125°C 0.0 10 15 20 25 30 RG mJ t Eoff 1.5 30 1.0 15 0.5 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 80 5 10 15 ns 600 Eoff t 400 200 tf 20 25 30 RG 0 35 Ω 40 Fig.10 Typ. turn off energy and switching times versus gate resistor 1 diode K/W ZthJC IGBT 0.1 PH ICM A 120 A 100 td(off) 0.0 0 35 Ω 40 SE 5 800 VCE = 300V VGE = ±15V IC = 35A TJ = 125°C -O U tr 0 A Fig. 8 Typ. turn off energy and switching times versus collector current T 2.0 0.5 60 IC Fig. 7 Typ. turn on energy and switching times versus collector current 100 60 40 0.01 RG = 10 Ω TJ = 125°C 20 single pulse 0 0 100 200 300 400 500 600 700 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 0.001 10-5 IXDH30N60B 10-4 10-3 10-2 10-1 100 s 101 t Fig. 12 Typ. transient thermal impedance 20190131a 4-4