IXDN55N120D1

IXDN 55N120 D1 VCES = 1200 V IC25 = 100 A VCE(sat) typ = 2.3 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 100 A IC90 TC = 90°C ICM TC = 90°C, tp = 1 ms 62 A 124 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH ICM = 100 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 Ω, non repetitive 10 µs PC TC = 25°C VISOL 50/60 Hz; IISOL ≤ 1 mA E = Emitter ①, G = Gate, ① Either Emitter terminal can be used as Main or Kelvin Emitter Features ● ● ● ● ● ● ● ● ● IGBT Diode 450 220 W W 2500 V~ TJ -40 ... +150 °C Tstg -40 ... +150 °C Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g ● ● ● ● Conditions V(BR)CES VGE = 0 V VGE(th) IC = 2 mA, VCE = VGE ICES VCE = VCES Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 55 A, VGE = 15 V ● 6.5 6 V 3.8 mA mA ± 500 nA 2.3 2.8 V 203 IGES ● AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies V 4.5 TJ = 25°C TJ = 125°C Space savings Easy to mount with 2 screws High power density Typical Applications ● Symbol NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package miniBLOC Advantages ● Md C = Collector E = Emitter ① © 2002 IXYS All rights reserved 1-4 IXDN 55N120 D1 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = 50 A, VGE = 15 V, VCE = 0.5 VCES td(on) tr td(off) tf Inductive load, TJ = 125°C IC = 55 A, VGE = ±15 V, VCE = 600 V, RG = 22 Ω 3300 pF 500 pF 220 pF 240 nC 100 ns 70 ns 500 ns 70 ns Eon 8.4 mJ Eoff 6.2 mJ 0.28 K/W RthJC RthCK Package with heatsink compound Reverse Diode (FRED) 0.1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 55 A, VGE = 0 V IF = 55 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 55 A, -diF/dt = 400 A/µs, VR = 600 V trr VGE = 0 V, TJ = 125°C trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 2.4 1.9 2.6 V V 110 60 A A 40 A 200 ns 40 ns RthJC 0.6 K/W miniBLOC, SOT-227 B M4 screws (4x) supplied © 2002 IXYS All rights reserved Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 203 Dim. 2-4 IXDN 55N120 D1 120 TJ = 25°C A 100 120 A TJ = 125°C 100 VGE=17V 15V 13V IC VGE=17V 15V IC 13V 80 80 11V 11V 60 60 40 40 9V 9V 20 20 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 3.5 V Fig. 2 Typ. output characteristics 180 120 VCE = 20V A TJ = 25°C 100 IC 2.5 3.0 VCE TJ = 125°C A 150 TJ = 25°C IF 80 120 60 90 40 60 20 30 0 0 5 6 7 8 9 10 0 11 V 1 2 3 V 4 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 300 120 20 V VCE = 600V IC = 50A A VGE 15 ns trr IRM trr 200 80 10 40 5 0 TJ = 125°C VR = 600V IF = 50A IRM IXDN55N120 0 0 50 100 150 200 250 nC QG 0 200 400 600 800 A/μs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 203 Fig. 5 Typ. turn on gate charge 100 © 2002 IXYS All rights reserved 3-4 IXDN 55N120 D1 Eon 24 120 mJ ns 18 12 mJ 10 90 td(on) t 12 Eoff RG = 22Ω TJ = 125°C Eon 0 20 40 60 80 4 2 VCE = 600V VGE = ±15V IC = 50A TJ = 125°C Eon 15 0 0 20 40 60 80 100 A IC td(on) Eon 10 Fig. 8 Typ. turn off energy and switching times versus collector current 240 10 ns mJ 180 8 t Eoff 1500 td(off) VCE = 600V VGE = ±15V IC = 50A TJ = 125°C ns 1200 Eoff t 6 900 4 600 2 300 120 tr 5 60 0 0 0 10 20 30 40 50 60 70 80 90 100 Ω RG 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 ICM 100 tf 0 100 A Fig. 7 Typ. turn on energy and switching times versus collector current mJ 200 RG = 22Ω TJ = 125°C IC 20 300 VCE = 600V VGE = ±15V 30 0 0 400 t 6 VCE = 600V VGE = ±15V 6 Eoff ns 500 td(off) 8 60 tr 600 tf 0 10 20 30 40 50 60 70 80 90 100 Ω RG 0 Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 ZthJC 80 60 diode 0.01 RG = 22Ω TJ = 125°C VCEK < VCES IGBT 0.001 40 0.0001 20 0 0 200 400 600 800 1000 1200 V VCE 0.00001 0.00001 0.0001 IXDN55N120 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 203 Fig. 11 Reverse biased safe operating area RBSOA single pulse © 2002 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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