IXDN75N120

IXDN 75N120 High Voltage IGBT VCES = 1200 V = 150 A IC25 VCE(sat) typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Maximum Ratings E = Emitter ①, G = Gate, Symbol Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 150 A IC90 TC = 90°C 95 A Features ICM TC = 90°C, tp = 1 ms 190 A ● ICM = 150 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 15 W, non repetitive 10 µs PC TC = 25°C VISOL 50/60 Hz; IISOL £ 1 mA IGBT 2500 V~ TJ -40 ... +150 °C Tstg -40 ... +150 °C Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 Conditions ● ● W Symbol ● ● 660 Md ① Either Emitter terminal can be used as Main or Kelvin Emitter ● VGE = ±15 V, TJ = 125°C, RG = 15 W Clamped inductive load, L = 30 µH RBSOA g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ● ● VGE = 0 V VGE(th) IC = 3 mA, VCE = VGE ICES VCE = VCES 1200 V 4.5 TJ = 25°C TJ = 125°C ● ● ● VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 75 A, VGE = 15 V 6 V Space savings Easy to mount with 2 screws High power density Typical Applications ● ● ● ● AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies 4 mA mA ± 500 nA 2.2 2.7 V 031 IGES 6.5 NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled International standard package miniBLOC Advantages ● V(BR)CES C = Collector E = Emitter ① © 2000 IXYS All rights reserved 1-4 IXDN 75N120 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = 75 A, VGE = 15 V, VCE = 0.5 VCES td(on) tr td(off) tf Inductive load, TJ = 125°C IC = 75 A, VGE = ±15 V, VCE = 600 V, RG = 15 W 5500 pF 750 pF 330 pF 360 nC 100 ns 50 ns 650 ns 50 ns Eon 12.1 mJ Eoff 10.5 mJ RthJC RthCK 0.19 K/W Package with heatsink compound © 2000 IXYS All rights reserved 0.1 K/W miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 2-4 IXDN 75N120 175 175 VGE=17V 15V TJ = 25°C A 150 13V IC 125 VGE=17V 15V TJ = 125°C A 150 13V IC 125 11V 100 100 75 75 50 11V 9V 50 9V 25 25 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 300 A 250 VCE = 20V IC 3.5 V Fig. 2 Typ. output characteristics 150 TJ = 25°C 125 A 2.5 3.0 VCE IF 100 TJ = 125°C TJ = 25°C 200 75 150 50 100 25 50 0 0 5 6 7 8 9 10 0 11 V 1 2 3 V 4 VF VGE Fig. 3 Typ. transfer characteristics 300 120 20 V VCE = 600V IC = 75A A ns VGE 15 trr trr IRM 200 80 10 TJ = 125°C VR = 600V IF = 75A 40 IRM 5 IXDN75N120 0 0 100 200 300 400 QG nC 0 0 200 400 600 800 A/ms -di/dt 100 0 1000 Fig. 4 Typ. turn on gate charge © 2000 IXYS All rights reserved 3-4 IXDN 75N120 40 mJ Eon Eon 30 RG = 15W TJ = 125°C 0 50 100 mJ ns td(off) 10 400 VCE = 600V VGE = ±15V 40 5 0 0 RG = 15W 200 TJ = 125°C tf 0 150 A 50 100 25 td(on) VCE = 600V VGE = ±15V IC = 75A TJ = 125°C Eon Eon tr 10 5 0 8 Fig. 6 Typ. turn off energy and switching times versus collector current ns 25 mJ 160 20 200 t 15 0 16 24 32 40 0 150 A IC Fig. 5 Typ. turn on energy and switching times versus collector current 20 600 t IC mJ 800 Eoff Eoff 15 80 VCE = 600V VGE = ±15V 0 ns t tr 10 20 120 td(on) 20 160 48 W 2000 VCE = 600V VGE = ±15V IC = 75A TJ = 125°C Eoff ns td(off) 1600 t 120 15 80 10 800 40 5 400 tf 0 0 56 1200 Eoff 0 8 16 24 RG 32 40 48 0 W 56 RG Fig. 7 Typ. turn on energy and switching times versus gate resistor Fig.8 200 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 A ICM 150 ZthJC 0.01 RG = 15W TJ = 125°C VCEK < VCES 100 0.001 50 0.0001 0 0 200 400 600 800 1000 1200 V VCE Fig. 9 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved single pulse 0.00001 0.00001 0.0001 IXDN75N120 0.001 0.01 0.1 s 1 t Fig. 10 Typ. transient thermal impedance 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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