IXDP20N60B

IXDP20N60B High Voltage IGBT with optional Diode VCES = 600 V IC25 = 32 A VCE(sat) typ = 2.2 V Replacement IXYP20N65B3 High Speed, Low Saturation Voltage C TO-220 AB G G C E C (TAB) E G = Gate, C = Collector , Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 20 A ICM TC = 90°C, tp =1 ms 40 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH ICM = 60 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 Ω, non repetitive 10 µs PC TC = 25°C Features ● ● ● ● ● ● TJ Tstg ● 140 50 W W ● t u Space savings High power density o e s a h p -55 ... +150 °C -40 ... +150 °C 300 °C 0.4 - 0.6 Nm Typical Applications ● ● ● Mounting torque ● ● Weight NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages ● Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md ● ● IGBT Diode E = Emitter TAB = Collector 2 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC ICES VCE = VCES Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 = 0.4 mA, VCE = VGE IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC V 3 TJ = 25°C TJ = 125°C = 20 A, VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved g AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies 5 0.7 V 0.1 mA mA ± 500 nA 2.2 2.8 V 20190131a 1-4 IXDP20N60B Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = 20 A, VGE = 15 V, VCE = 480 V td(on) tr td(off) Inductive load, TJ = 125°C tf IC = 20 A, VGE = ±15 V, VCE = 300 V, RG = 22 Ω Eon Eoff RthJC RthCH Package with heatsink compound RthCK Package with heatsink compound 800 pF 85 pF 50 pF 70 nC 25 ns 30 ns 260 ns 55 ns 0.9 mJ 0.4 mJ 0.9 K/W K/W 0.5 0.25 K/W t u TO-220 AB Outline o e s a h p A ØP E A1 Q H D 1 2 3 L1 A2 L b1 b c e IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved Dim. Millimeters min max Inches min max A A1 A2 b c D E e H L L1 ØP Q 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 20190131a 2-4 IXDP20N60B 40 40 VGE= 17V 15V 13V 11V VGE= 17V 15V 13V 9V 30 11V 9V 30 IC IC 20 20 [A] [A] 10 10 TJ = 125°C TJ = 25°C 0 0 0 1 2 3 V 4 0 5 1 2 3 4 5 VCE [V] VCE [V] Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics 40 40 30 30 IF IC 20 20 [A] [A] 10 TJ = 125°C t u 10 TJ = 125°C TJ = 25°C VCE = 20V 0 3 4 5 6 7 8 9 0 0 10 TJ = 25°C 1 2 3 VF [V] VGE [V] o e s a h p Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 3 Typ. transfer characteristics 120 30 15 IRM trr 25 12 80 20 VGE 9 trr IRM 15 [ns] [A] [V] 6 40 10 VCE = 480V IC = 15A 3 TJ = 125°C VR = 300V IF = 10A 5 IXDP20N06B 0 0 0 20 40 60 80 100 QG [nC] Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 0 200 400 600 800 0 1000 -di/dt [A/µs] Fig. 6 Typ. turn off characteristics of free wheeling diode 20190131a 3-4 IXDP20N60B 1.5 400 ns RG = 22Ω TJ = 125°C 1.0 0.8 75 VCE = 300V VGE = ±15V 0.6 50 Eon [mJ] 0.4 [ns] tr 0.5 t Eoff t td(on) 200 VCE = 300V VGE = ±15V [mJ] 25 0.2 Eon 0.0 20 0 0 30 10 20 IC [A] IC [A] Fig. 7 Typ. turn on energy and switching times versus collector current 1.2 40 1.00 30 0.75 1.0 [ns] VCE = 300V VGE = ±15V IC = 20A TJ = 125°C 0.6 0 10 20 30 40 50 60 td(off) 600 t 0.50 20 Eon 800 VCE = 300V VGE = ±15V IC = 20A TJ = 125°C Eoff t Eon 0.8 30 Fig. 8 Typ. turn off energy and switching times versus collector current td(on) tr [mJ] 400 [mJ] [ns] Eoff 10 0.25 0 0.00 t u tf 0 70 RG [Ω] Fig. 9 Typ. turn on energy and switching times versus gate resistor 10 20 30 40 50 60 o e s a h p RG = 22Ω TJ = 125°C 60 200 0 70 RG [Ω] Fig.10 Typ. turn off energy and switching times versus gate resistor 5 80 100 0.0 0 10 [ns] RG = 22Ω TJ = 125°C tf Eoff 0 300 td(off) diode 1 IGBT ZthJC ICM 0.1 40 [A] [K/W] 0.01 20 single pulse 0 0 100 200 300 400 500 600 700 VCE [V] Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 0.001 10-5 10-4 10-3 10-2 t [s] IXDP20N06B 10-1 100 101 Fig. 6 Typ. turn off characteristics of free wheeling diode 20190131a 4-4