IXDP20N60BD1

IXDP 20N60B D1 VCES = 600 V IC25 = 32 A VCE(sat) typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C TO-220 AB G Replacements: IXYP15N65C3D1 / IXXP12N65B4D1 G C E G = Gate, C = Collector , Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 IC25 TC = 25°C IC90 TC = 90°C ICM TC = 90°C, tp =1 ms RBSOA VGE = ±15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH tSC (SCSOA) VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 Ω, non repetitive PC TC = 25°C ● ● ● ● Tstg -O U 20 A 40 A ICM = 60 VCEK < VCES A 10 µs PH Weight Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC ICES VCE = VCES IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC Advantages 140 50 W W -55 ... +150 °C -40 ... +150 °C 300 °C 0.4 - 0.6 Nm ● Typical Applications ● ● ● ● ● 2 g Space savings High power density AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 = 0.4 mA, VCE = VGE V 3 TJ = 25°C TJ = 125°C = 20 A, VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved ● ● A Mounting torque ● ● Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md A SE TJ NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package T V ● IGBT Diode E = Emitter TAB = Collector Features ● 32 C (TAB) E 5 0.7 V 0.1 mA mA ± 500 nA 2.2 2.8 V 20190131a 1-4 IXDP 20N60B D1 Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = 20 A, VGE = 15 V, VCE = 480 V td(on) tr td(off) Inductive load, TJ = 125°C tf IC = 20 A, VGE = ±15 V, VCE = 300 V, RG = 22 Ω Eon Eoff RthJC RthCH Package with heatsink compound RthCK Package with heatsink compound Reverse Diode (FRED) [D1 version only] 800 pF 85 pF 50 pF 70 nC 25 ns 30 ns 260 ns 55 ns 0.9 mJ 0.4 mJ 0.9 K/W K/W 0.5 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. T Symbol Symbol Conditions VF IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 10 A, -diF/dt = 400 A/µs, VR = 300 V 11 A trr VGE = 0 V, TJ = 125°C 80 ns trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns 2.4 V V -O U 2.1 1.6 25 15 RthJC A A SE 2.5 K/W TO-220 AB Outline A ØP E A1 Q A H PH D 1 2 3 L1 A2 L b1 b c e IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved Dim. Millimeters min max Inches min max A A1 A2 b c D E e H L L1 ØP Q 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 20190131a 2-4 IXDP 20N60B D1 40 40 VGE= 17V 15V 13V 11V VGE= 17V 15V 13V 9V 30 11V 9V 30 IC IC 20 20 [A] [A] 10 10 TJ = 125°C TJ = 25°C 0 0 0 1 2 3 V 4 0 5 1 2 3 4 5 VCE [V] VCE [V] 40 30 30 -O U 40 T Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics IF IC 20 20 [A] [A] 10 TJ = 125°C TJ = 25°C 10 TJ = 125°C TJ = 25°C VCE = 20V 0 4 5 6 7 8 9 0 0 10 SE 3 1 Fig. 3 Typ. transfer characteristics PH 12 Fig. 4 Typ. forward characteristics of free wheeling diode 120 IRM trr 25 80 20 VGE 9 trr IRM 15 [ns] [A] [V] 6 3 3 30 A 15 2 VF [V] VGE [V] 40 10 VCE = 480V IC = 15A TJ = 125°C VR = 300V IF = 10A 5 IXDP20N06B 0 0 0 20 40 60 80 100 QG [nC] Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 0 200 400 600 800 0 1000 -di/dt [A/µs] Fig. 6 Typ. turn off characteristics of free wheeling diode 20190131a 3-4 IXDP 20N60B D1 1.5 400 ns RG = 22Ω TJ = 125°C 1.0 0.8 75 VCE = 300V VGE = ±15V 0.6 50 Eon [mJ] 0.4 [ns] tr 0.5 t Eoff t td(on) 200 VCE = 300V VGE = ±15V [mJ] 25 0.2 Eon 0.0 20 0 0 30 10 20 IC [A] IC [A] Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current 40 1.00 30 0.75 1.0 600 [ns] 0.8 0.6 10 20 30 [mJ] 40 50 60 10 0.25 0 0.00 0 70 RG = 22Ω TJ = 125°C A RG [Ω] Fig. 9 Typ. turn on energy and switching times versus gate resistor 80 400 [ns] Eoff SE VCE = 300V VGE = ±15V IC = 20A TJ = 125°C t 0.50 20 Eon 10 20 200 tf 30 40 50 60 0 70 RG [Ω] Fig.10 Typ. turn off energy and switching times versus gate resistor 5 diode 1 PH 60 td(off) Eoff t Eon 0 800 VCE = 300V VGE = ±15V IC = 20A TJ = 125°C -O U td(on) tr [mJ] 30 T 1.2 100 0.0 0 10 [ns] RG = 22Ω TJ = 125°C tf Eoff 0 300 td(off) IGBT ZthJC ICM 0.1 40 [A] [K/W] 0.01 20 single pulse 0 0 100 200 300 400 500 600 700 VCE [V] Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 0.001 10-5 IXDP20N06B 10 -4 10 -3 -2 10 t [s] 10 -1 10 0 101 Fig. 6 Typ. turn off characteristics of free wheeling diode 20190131a 4-4