IXDP35N60B

IXDP35N60B IGBT with optional Diode VCES = 600 V IC25 = 60 A VCE(sat) typ = 2.1 V Replacement Type IXYP30N65C3 High Speed, Low Saturation Voltage TO-220 AB C G G C E Gate, Emitter, Collector, Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A ● ● ● ● ● IC90 TC = 90°C 35 A TC = 90°C, tp =1 ms 70 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH tSC (SCSOA) VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 10 Ω, non repetitive PC TC = 25°C TJ Tstg ● ● ● A 10 µs Advantages ● IGBT Diode 250 80 W W -55 ... +150 °C -40 ... +150 °C 300 °C 0.4 - 0.6 0.8 - 1.2 Nm Nm ● Mounting torque 6 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC ICES VCE = VCES VCE = 0 V, VGE = ± 20 V VCE(sat) IC 600 ● V 3 TJ = 25°C TJ = 125°C = 35 A, VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved g ● AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 0.7 mA, VCE = VGE IGES ● ● TO-220 TO-247 Space savings High power density Typical Applications ● Weight NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package t u o e s a h p ICM = 110 VCEK < VCES Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md TAB = Collector Features ● ICM C (TAB) E 5 1 V 0.1 mA mA ± 500 nA 2.2 2.7 V 20190131a 1-4 IXDP35N60B Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = 35 A, VGE = 15 V, VCE = 480 V td(on) tr td(off) Inductive load, TJ = 125°C tf IC = 35 A, VGE = ±15 V, VCE = 300 V, RG = 10 Ω Eon Eoff 1600 pF 150 pF 90 pF 120 nC 30 ns 45 ns 320 ns 70 ns 1.6 mJ 0.8 RthJC RthCH RthCH mJ 0.5 K/W TO 247 Package with heatsink compound TO 220 Package with heatsink compound Reverse Diode (FRED) [D1 version only] 0.25 0.5 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 35 A, VGE = 0 V IF = 35 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 15 A, -diF/dt = 400 A/µs, VR = 300 V 13 A trr VGE = 0 V, TJ = 125°C 90 ns trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns RthJC 2.1 1.6 2.4 V V 45 25 A A t u o e s a h p 1.6 K/W A = supplier option A1 H1 Q E ØP D 4 2 L 3x b2 3 L1 1 3x b 2x e Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 C A2 IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved TO-220 AB Outline 20190131a 2-4 IXDP35N60B 80 A 70 IC 80 VGE= 17V 15V 13V 11V 9V IC 60 9V 60 50 50 40 40 30 30 20 20 10 10 TJ = 25°C 0 0 1 2 3 4 0 7 V 5 6 VCE TJ = 125°C 0 1 2 3 4 5 6 Fig. 2 80 80 A 70 70 A 60 IF 60 50 50 40 40 30 30 Typ. output characteristics TJ = 125°C TJ = 25°C t u o e s a h p 20 20 TJ = 125°C 10 TJ = 25°C 10 VCE = 20V 0 3 4 7 V VCE Fig. 1 Typ. output characteristics IC 11V VGE= 17V 15V 13V A 70 5 6 7 8 0 0 9 V 10 1 VGE Fig. 3 Typ. transfer characteristics 2 VF V 3 Fig. 4 Typ. forward characteristics of free wheeling diode 120 30 15 trr V 12 25 A ns 20 80 trr IRM VGE 9 15 6 40 10 VCE = 480V IC = 30A 3 TJ = 125°C VR = 300V IF = 15A IRM 5 IXDx35N60B 0 0 0 20 40 60 80 100 120 nC QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 0 200 400 600 800 A/µs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 20190131a 3-4 IXDP35N60B 4 Eon mJ VCE = 300V VGE = ±15V 3 RG = 10Ω TJ = 125°C td(on) 80 2.0 ns mJ 60 1.5 t ns td(off) 300 t Eoff Eon 2 Eoff 400 1.0 40 200 VCE = 300V VGE = ±15V tr 1 RG = 10Ω TJ = 125°C 0.5 20 tf 0 10 0.0 10 0 20 30 40 60 A 50 0 20 30 40 IC 2.0 mJ ns 45 Eon Eon 1.5 tr 1.0 VCE = 300V VGE = ±15V IC = 35A TJ = 125°C 0 5 800 VCE = 300V VGE = ±15V IC = 35A TJ = 125°C mJ t Eoff 1.5 30 1.0 15 0.5 ICM 80 td(off) t u o e s a h p 10 15 20 25 30 RG 0 35 Ω 40 ns 600 Eoff t 400 200 tf 0.0 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 A 2.0 60 0.0 60 Fig. 8 Typ. turn off energy and switching times versus collector current td(on) 0.5 50 IC Fig. 7 Typ. turn on energy and switching times versus collector current 100 5 10 15 20 25 30 RG 0 35 Ω 40 Fig.10 Typ. turn off energy and switching times versus gate resistor 1 diode K/W ZthJC IGBT 0.1 60 40 0.01 RG = 10 Ω TJ = 125°C 20 0 0 100 200 single pulse 300 400 500 600 700 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 0.001 10-5 IXDH30N60B 10-4 10-3 10-2 10-1 100 s 101 t Fig. 12 Typ. transient thermal impedance 20190131a 4-4