IXDT30N120

IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V = 60 A IC25 VCE(sat) typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C TC = 90°C TC = 90°C; tp = 1 ms RBSOA G C E IXDH 30N120 Symbol TO-247 AD (IXDH) IXDH 30N120 D1 Maximum Ratings 1200 1200 V V ±20 ±30 V V 60 38 76 A A A VGE = ±15 V; TJ = 125°C; RG = 47 Ω Clamped inductive load; L = 30 µH ICM = 50 VCEK < VCES A tSC (SCSOA) VGE = ±15 V; VCE = VCES; TJ = 125°C RG = 47 Ω, non repetitive 10 µs PC TC = 25°C; 300 135 W W -55 ... +150 -40 ... +150 °C °C IGBT Diode TJ Tstg Mounting torque 1.1/10 Nm/lb.in. Weight 6 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC = 1 mA; VCE = VGE ICES VCE = VCES; g G = Gate, C = Collector , E = Emitter TAB = Collector Features • NPT IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy paralleling • MOS input, voltage controlled • optional ultra fast diode • International standard packages Advantages • Space savings • High power density • IXDT: surface mountable high power package Typical Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninteruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C TJ = 125°C IGES VCE = 0 V; VGE = ± 20 V VCE(sat) IC = 30 A; VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved V 6.5 V 1.5 mA mA ± 500 nA 2.9 V 2.5 2.4 0538 Md C (TAB) E 1-4 IXDH 30N120 IXDH 30N120 D1 Conditions Cies Coes Cres VCE = 25 V; VGE = 0 V; f = 1 MHz Qg IC = 30 A; VGE = 15 V; VCE = 0.5 VCES td(on) tr td(off) tf Eon Eoff RthJC RthCK Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1650 250 110 pF pF pF 120 nC 100 70 500 70 4.6 3.4 ns ns ns ns mJ mJ 0.25 0.42 K/W K/W Inductive load, TJ = 125°C IC = 30 A; VGE = ±15 V; VCE = 600 V; RG = 47 Ω Package with heatsink compound TO-247 AD Outline Dim. Reverse Diode (FRED) [D1 version only] Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 30 A; VGE = 0 V IF = 30 A; VGE = 0 V; TJ = 125°C IF TC = 25°C TC = 90°C IRM trr IF = 30 A; -diF/dt = 400 A/µs; VR = 600 V VGE = 0 V; TJ = 125°C trr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V; VGE = 0 V RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 2.5 2.0 2.7 V V 60 35 A A 20 200 A ns 40 ns Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 K/W 0538 Symbol 2-4 IXDH 30N120 IXDH 30N120 D1 60 60 VGE=17V TJ = 25°C A 50 15V 13V IC VGE=17V TJ = 125°C 15V A 50 IC 40 13V 40 11V 11V 30 30 20 20 9V 9V 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 60 IC 3.5 V Fig. 2 Typ. output characteristics 80 VCE = 20V TJ = 125°C A70 TJ = 25°C A 50 2.5 3.0 VCE IF 40 60 TJ = 25°C 50 40 30 30 20 20 10 10 0 0 5 6 7 8 9 10 0 11 V 1 2 Fig. 3 Typ. transfer characteristics V 4 Fig. 4 Typ. forward characteristics of free wheeling diode 300 60 20 V VCE = 600V IC 3 VF VGE = 25A A VGE 15 ns IRM trr trr 200 40 10 20 TJ = 125°C VR = 600V IF = 30A IRM 5 100 IXDH30N120 0 0 20 40 60 80 100 120 140 nC QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0 200 400 600 800 A/µs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 0538 0 3-4 IXDH 30N120 IXDH 30N120 D1 14 140 6 12 mJ ns 120 mJ 5 Eon 10 100 8 tr 4 Eon 2 VCE = 600V VGE = ±15V 60 RG = 47Ω TJ = 125°C 40 0 0 Eoff Eoff td(off) 400 t 4 10 20 30 40 3 VCE = 600V VGE = ±15V 300 2 RG = 47Ω TJ = 125°C 200 20 1 0 0 50 A 0 0 10 20 30 40 mJ 10 Eon 8 50 A IC Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current 5 240 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C 100 tf IC 12 ns 500 80 td(on) 6 t 600 td(on) ns Eon 180 tr t 6 1500 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C mJ 4 Eoff ns td(off) 1200 Eoff t 3 900 2 600 1 300 120 4 60 2 0 0 40 80 120 160 RG 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM tf 0 0 200 Ω 240 40 80 120 0 200 Ω 240 160 RG Fig.10 Typ. turn off energy and switching times versus gate resistor 60 10 A 50 K/W 1 diode ZthJC 40 RG = 47Ω TJ = 125°C VCEK < VCES 30 IGBT 0.1 0.01 20 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved single pulse 0.0001 0.00001 0.0001 IXDH30N120 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 0538 0.001 10 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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