IXFA102N15T

IXFA102N15T IXFH102N15T IXFP102N15T Trench Gate Power MOSFET HiperFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated = 150V = 102A Ω ≤ 18mΩ ≤ 120ns TO-263 (IXFA) G S (TAB) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ 150 150 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM 102 75 300 A A A IA EAS TC = 25°C TC = 25°C 51 750 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C 20 V/ns PD TC = 25°C 455 W -55 ... +175 175 -55 ... +175 °C °C °C G = Gate S = Source 300 260 °C °C Features (TO-220 & TO-247) 1.13 / 10 (TO-263) 10..65 / 2.2..14.6 Nmlb.in. N/lb. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md FC Mounting Torque Mounting Force Weight TO-263 TO-220 TO-247 G TO-247 (IXFH) G z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V ± 200 nA TJ = 150°C © 2009 IXYS CORPORATION, All Rights Reserved (TAB) S D = Drain TAB = Drain International Standard Packages Avalanche Rated Easy to Mount Space Savings High Power Density Applications V 5.0 D Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) (TAB) D S 5 μA 750 μA 18 mΩ z z z z z z z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100045A(04/09) IXFA102N15T IXFH102N15T IXFP102N15T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS= 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 25A Qgd 80 S 5220 pF 685 pF 95 pF 20 ns 14 ns 25 ns 22 ns 87 nC 23 nC 31 nC Pins: 1 - Gate 2 - Drain 0.33 °C/W RthJC RthCH TO-220 (IXFP) Outline (TO-220) 0.50 °C/W (TO-247) 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 102 A ISM Repetitive, Pulse Width Limited by TJM 400 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IRM QRM IF = 51A, -di/dt = 100A/μs 6.2 236 VR = 75V, VGS = 0V TO-247 (IXFH) Outline 120 ns A nC 1 2 3 ∅P Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXFA) Outline Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA102N15T IXFH102N15T IXFP102N15T Fig. 1. Output Characteristics @ 25ºC 110 Fig. 2. Extended Output Characteristics @ 25ºC 300 VGS = 15V 10V 9V 8V 100 90 VGS = 15V 10V 9V 250 200 7V 70 ID - Amperes ID - Amperes 80 60 50 40 30 8V 150 7V 100 6V 20 50 10 6V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 2 4 6 110 7V RDS(on) - Normalized ID - Amperes 14 16 VGS = 10V 2.6 80 70 60 6V 50 40 30 20 2.2 I D = 102A 1.8 I D = 51A 1.4 1.0 0.6 10 5V 0 0.2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 51A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 80 5.0 VGS = 10V 4.5 External Lead Current Limit 70 TJ = 175ºC 4.0 60 3.5 ID - Amperes RDS(on) - Normalized 12 3.0 VGS = 15V 10V 9V 8V 90 10 Fig. 4. RDS(on) Normalized to ID = 51A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 100 8 VDS - Volts VDS - Volts 3.0 2.5 2.0 TJ = 25ºC 50 40 30 20 1.5 10 1.0 0 0.5 0 40 80 120 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 200 240 280 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFA102N15T IXFH102N15T IXFP102N15T Fig. 7. Input Admittance Fig. 8. Transconductance 120 160 100 90 g f s - Siemens 120 ID - Amperes TJ = - 40ºC 110 140 100 80 TJ = 150ºC 25ºC - 40ºC 60 80 25ºC 70 60 50 150ºC 40 30 40 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 10 275 9 VDS = 75V 8 I G = 10mA 225 120 140 160 80 90 I D = 51A 7 200 VGS - Volts IS - Amperes 100 Fig. 10. Gate Charge 250 175 150 125 TJ = 150ºC 100 6 5 4 3 75 TJ = 25ºC 2 50 1 25 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 30 40 50 60 70 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000.0 RDS(on) Limit Ciss 100.0 1,000 ID - Amperes Capacitance - PicoFarads 80 ID - Amperes Coss 25µs 100µs 10.0 1ms 100 Crss 1.0 10ms 100ms TJ = 175ºC DC TC = 25ºC Single Pulse f = 1 MHz 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_102N15T(6E)9-30-08 IXFA102N15T IXFH102N15T IXFP102N15T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 18 RG = 3.3Ω 18 RG = 3.3Ω 17 VGS = 10V VGS = 10V 17 TJ = 125ºC VDS = 75V VDS = 75V t r - Nanoseconds t r - Nanoseconds 19 16 I 15 D = 102A 14 I 13 D = 51A 16 15 14 12 TJ = 25ºC 13 11 10 12 25 35 45 55 65 75 85 95 105 115 125 50 55 60 65 70 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 80 TJ = 125ºC, VGS = 10V I D = 102A tf 28 28 RG = 3.3Ω, VGS = 10V 36 27 VDS = 75V 34 50 22 40 20 I D = 51A 18 20 10 0 8 10 12 14 16 18 40 26 32 25 30 I D = 51A 24 28 23 26 14 21 12 20 24 I D = 102A 25 20 35 45 55 26 26 21 TJ = 25ºC 20 60 65 70 75 80 85 90 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 95 100 t f - Nanoseconds 30 22 55 95 105 115 20 125 tf td(off) - - - - 140 TJ = 125ºC, VGS = 10V VDS = 75V 200 120 I D = 102A 160 100 120 I D 80 = 51A 80 60 22 40 40 18 105 0 20 2 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 34 td(off) - - - - RG = 3.3Ω, VGS = 10V 50 85 160 240 38 TJ = 125ºC t d(off) - Nanoseconds t f - Nanoseconds 25 VDS = 75V 75 280 42 23 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 22 TJ - Degrees Centigrade RG - Ohms 24 38 td(off) - - - - 22 16 6 105 29 24 4 100 30 60 2 95 30 26 30 90 t d(off) - Nanoseconds VDS = 75V 70 85 32 t f - Nanoseconds td(on) - - - - t d(on) - Nanoseconds t r - Nanoseconds tr 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 100 90 75 ID - Amperes IXFA102N15T IXFH102N15T IXFP102N15T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_102N15T(6E)9-30-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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