IXFA10N60P

IXFA10N60P IXFP10N60P Polar3 TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 10A  740m  TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 10 A IDM TC = 25C, Pulse Width Limited by TJM 25 A IA TC = 25C 10 A EAS TC = 25C 500 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 200 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 2.5 3.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) TO-220 (IXFP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved  High Power Density Easy to Mount Space Savings V Applications V  100 nA  5.5 25 A 500 μA    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 740 m DS99424G(6/18) IXFA10N60P IXFP10N60P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 6 VDS = 10V, ID = 0.5 • ID25, Note 1 11 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S 1720 pF 160 pF 14 pF 23 ns 27 ns 65 ns 21 ns 32 nC 12 nC 10 nC 1. Gate 2. Drain 3. Source 4. Drain 0.62 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 10 A ISM Repetitive, Pulse Width Limited by TJM 30 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 5A, -di/dt = 200A/μs 120 320 3 VR = 100V 200 ns nC A TO-220 Outline E A A1 oP H1 Q D2 D D1 E1 A2 EJECTOR L1 L e 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA10N60P IXFP10N60P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 24 10 VGS = 10V VGS = 10V 7V 9 20 8 7V 6V I D - Amperes I D - Amperes 7 6 5 4 16 6V 12 8 3 2 4 5V 5V 1 0 0 0 1 2 3 4 5 6 7 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.6 10 2.4 VGS = 10V 9 VGS = 10V 2.2 8 RDS(on) - Normalized 6V 7 I D - Amperes 20 VDS - Volts VDS - Volts 6 5 4 5V 3 2.0 I D = 10A 1.8 I D = 5A 1.6 1.4 1.2 1.0 2 0.8 1 0.6 0.4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 13 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 5A Value vs. Drain Current 3.0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 12 VGS = 10V TJ = 125 C 2.2 I D - Amperes RDS(on) - Normalized 10 o 2.6 1.8 1.4 8 6 4 o TJ = 25 C 1.0 2 0.6 0 0 5 10 15 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 20 25 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA10N60P IXFP10N60P Fig. 8. Transconductance Fig. 7. Input Admittance 16 22 o TJ = - 40 C 20 14 18 12 16 10 g f s - Siemens I D - Amperes o TJ = 125 C o 25 C o - 40 C 8 6 o 25 C 14 o 125 C 12 10 8 6 4 4 2 2 0 0 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 0 6.4 2 4 6 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 12 14 16 Fig. 10. Gate Charge 10 30 9 25 VDS = 300V I D = 5A 8 I G = 10mA 7 20 VGS - Volts I S - Amperes 8 I D - Amperes 15 10 o TJ = 125 C 6 5 4 3 o TJ = 25 C 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 5 VSD - Volts 10 15 20 25 30 35 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 1,000 Ciss 100 Z(th)JC - K / W Capacitance - PicoFarads f = 1 MHz Coss 10 0.1 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_10N60P (4J) 4-18-10-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.