IXFA110N15T2-TRL

Preliminary Technical Information IXFA110N15T2 IXFP110N15T2 TrenchT2TM HiperFET Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 150V = 110A   13m TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 150 V VDGR TJ = 25C to 175C, RGS = 1M 150 V VGSS VGSM Continuous Transient  20  30 V V ID25 TC = 25C 110 A IDM TC = 25C, Pulse Width Limited by TJM 300 A IA TC = 25C 50 A EAS TC = 25C 800 mJ dV/dt IS  IDM, VDD  VDSS,TJ  175C 15 V/ns PD TC = 25C 480 W -55 ... +175 TJ  C TO-220 (IXFP) G D S G = Gate S = Source TJM 175  C  -55 ... +175  C  Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g      Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 150 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS =  20V, VDS = 0V             200 nA  IDSS VDS = VDSS, VGS = 0V 5 A  4.5 TJ = 150C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  11 V Easy to mount Space savings High power density Applications  150  A  13 m    © 2018 IXYS CORPORATION, All rights reserved International standard packages 175°C Operating Temperature High current handling capability Fast intrinsic Rectifier Dynamic dV/dt rated Low RDS(on) Advantages  V D = Drain Tab = Drain Features Tstg TL TSOLD D (Tab) DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications DS100093A(11/18) IXFA110N15T2 IXFP110N15T2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 55A, Note 1 75 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3 (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd E 115 S 8600 pF 685 pF 77 pF 33 ns 16 ns 33 ns 18 ns 150 nC 42 nC 46 nC C2 A E1 L1 D1 D 1 2 L2 3 b b2 A1 4 H L3 c e 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.31 C/W RthJC RthCH TO-263 Outline TO-220 0.50  C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse width limited by TJM 440 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 55A, VGS = 0V IRM QRM -di/dt = 100A/s VR = 75V 85 ns 6.8 A 290 TO-220 Outline E A oP A1 H1 Q D2 D D1 nC E1 A2 EJECTOR PIN L1 L Notes: 1. Pulse test, t  300s; duty cycle, d  2%. e 3X b c e1 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. 3X b2 1 - Gate 2,4 - Drain 3 - Source PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA110N15T2 IXFP110N15T2 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 110 VGS = 15V 10V 8V 100 90 8V 250 80 7V 70 I D - Amperes I D - Amperes VGS = 15V 10V 300 60 50 6V 40 200 7V 150 100 30 20 50 10 6V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 2 4 6 10 12 14 16 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 3.4 110 VGS = 15V 10V 9V 8V 90 80 VGS = 10V 3.0 2.6 70 RDS(on) - Normalized 100 I D - Amperes 8 VDS - Volts VDS - Volts 7V 60 50 40 30 I D = 110A 2.2 I D = 55A 1.8 1.4 1.0 20 6V 0.6 10 0 0.2 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 -50 -25 0 VDS - Volts 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current 5.0 25 Fig. 6. Drain Current vs. Case Temperature 120 VGS = 10V 4.5 o TJ = 175 C 100 80 3.5 I D - Amperes RDS(on) - Normalized 4.0 3.0 2.5 o 2.0 TJ = 25 C 60 40 1.5 20 1.0 0 0.5 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 IXFA110N15T2 IXFP110N15T2 Fig. 7. Input Admittance 160 Fig. 8. Transconductance 180 o 120 140 o TJ = 150 C o o 25 C 100 g f s - Siemens I D - Amperes TJ = - 40 C 160 140 o - 40 C 80 60 40 25 C 120 100 o 150 C 80 60 40 20 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 0 20 40 60 VGS - Volts 120 140 160 120 140 160 10 VDS = 75V 9 300 I D = 55A 8 250 I G = 10mA 7 VGS - Volts I S - Amperes 100 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 200 150 6 5 4 3 o TJ = 150 C 100 o 2 TJ = 25 C 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 40 60 80 100 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit 10,000 25μs 100 C iss I D - Amperes Capacitance - PicoFarads 80 I D - Amperes 1,000 Coss 100μs 10 1ms 100 1 o TJ = 175 C C rss 100ms 10ms o TC = 25 C Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 VDS - Volts 1000 IXFA110N15T2 IXFP110N15T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 20 20 RG = 3.3Ω , VGS = 10V RG = 3.3Ω , VGS = 10V 19 19 VDS = 75V VDS = 75V t r - Nanoseconds t r - Nanoseconds 18 17 I D = 110A 16 15 I D = 55A o TJ = 125 C 18 17 16 o TJ = 25 C 14 15 13 14 12 25 35 45 55 65 75 85 95 105 115 55 125 60 65 70 75 TJ - Degrees Centigrade 280 80 o TJ = 125 C, VGS = 10V tf 26 60 120 50 I D = 55A 80 40 40 30 0 10 12 14 16 18 td(off) 24 60 22 50 I D = 55A, 110A 20 40 18 30 25 20 35 45 55 RG - Ohms 23 tf td(off) 70 o TJ = 25 C 40 18 17 75 80 85 90 95 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 100 105 t f - Nanoseconds t f - Nanoseconds 50 o TJ = 125 C 70 115 20 125 td(off) o 210 TJ = 125 C, VGS = 10V 80 170 I D = 55A 60 130 40 90 I D = 110A 30 20 20 110 0 50 10 2 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 60 65 105 250 100 t d(off) - Nanoseconds VDS = 75V 60 95 VDS = 75V 21 55 85 120 tf RG = 3.3Ω, VGS = 10V 19 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 80 20 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 22 70 16 20 8 110 VDS = 75V t f - Nanoseconds t r - Nanoseconds I D = 110A 6 105 t d(off) - Nanoseconds 70 t d(on) - Nanoseconds 200 4 100 RG = 3.3Ω, VGS = 10V VDS = 75V 2 95 80 td(off) 160 90 28 90 240 85 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 80 I D - Amperes IXFA110N15T2 IXFP110N15T2 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_110N15T2(61)12-17-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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