IXFA12N50P

PolarTM Power MOSFET HiperFETTM IXFA12N50P IXFP12N50P VDSS ID25 RDS(on) = 500V = 12A ≤ 500mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 12 A IDM TC = 25°C, pulse width limited by TJM 30 A IA EAS TC = 25°C TC = 25°C 12 600 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 200 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TO-263 (IXFA) TL 1.6mm (0.062) from case for 10s 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 2.5 3.0 g g (TO-220) G S (TAB) TO-220 (IXFP) G (TAB) D S G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z Easy to mount Space savings High power density V 5.5 V ±100 nA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 5 250 μA μA 500 mΩ DS99436F(04/08) IXFA12N50P IXFP12N50P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz 13 S 1830 182 16 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50Ω (External) 22 27 65 20 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 29 11 10 nC nC nC RthJC RthCS (TO-220) 0.50 0.62 °C/W °C/W td(on) tr td(off) tf 7.5 TO-220 (IXFP) Outline Source-Drain Diode Pins: 1 - Gate 2 - Drain Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 6A, -di/dt = 150A/μs, VR = 100V, VGS = 0V 2.8 18.2 300 ns μC A TO-263 (IXFA) Outline Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA12N50P IXFP12N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 12 30 VGS = 10V 8V 24 21 8 7V I D - Amperes I D - Amperes VGS = 10V 27 10 6 4 18 15 7V 12 9 6 2 6V 6V 3 0 0 0 1 2 3 4 5 6 7 0 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Normalized to I D = 6A Value vs. Junction Temperature @ 125ºC 12 2.6 VGS = 10V 2.4 7V 8 6 6V 4 VGS = 10V 2.2 R D S ( o n ) - Normalized 10 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 2.0 1.8 1.6 ID = 12A 1.4 ID = 6A 1.2 1.0 0.8 2 5V 0.6 0 0.4 0 2 4 6 8 10 12 -50 -25 VD S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D = 6A Value vs. Drain Current Fig. 6. Drain Curre nt v s. Case Te mpe rature 14 3.4 12 VGS = 10V 3.0 TJ = 125 ºC 10 2.6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.8 TJ = 25 ºC 1.4 8 6 4 1.0 2 0.6 0 0 3 6 9 12 I D 15 18 - Amperes © 2008 IXYS CORPORATION, All rights reserved 21 24 27 30 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFA12N50P IXFP12N50P Fig. 8. Transconductance 20 27 18 24 16 21 14 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 12 TJ = 125 ºC 10 25ºC - 40ºC 8 18 TJ = - 40ºC 15 25ºC 125ºC 12 9 6 6 4 3 2 0 0 4.5 5.0 5.5 6.0 VG S 6.5 7.0 0 7.5 2 4 8 I Fig. 9. Source Current vs. Source-To-Drain Voltage D 10 12 16 18 20 24 27 30 10 30 VG S - Volts 25 20 15 TJ = 125 ºC 9 VDS = 250V 8 ID = 6A 7 IG = 10m A 6 5 4 3 10 2 TJ = 25ºC 5 1 0 0 0.4 0.5 0.6 0.7 VS D 0.8 0.9 0 1.0 - Volts 3 6 9 12 Q - nanoCoulombs G 15 18 21 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10000 100 f = 1MHz TJ = 150ºC Ciss RDS(on) Limit I D - Amperes Capacitance - picoFarads 14 - Amperes Fig. 10. Gate Charge 35 I S - Amperes 6 - Volts 1000 Coss TC = 25ºC 25µs 10 100 100µs 1m s Crss DC 10 1 0 5 10 15 20 25 30 35 40 VD S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 10ms 1000 IXFA12N50P IXFP12N50P Fig. 13. Maximum Transient Thermal Impedance Z ( t h ) J C - ºC / W 1.00 0.10 0.01 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_12N50P(4J)4-14-08-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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