IXFA130N10T2

IXFA130N10T2 IXFP130N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 100V = 130A  10.1m  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS VGSM Continuous Transient 20 30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 130 120 300 A A A IA TC = 25C 65 A EAS TC = 25C 800 mJ dV/dt IS  IDM, VDD  VDSS,TJ  175C 20 V/ns PD TC = 25C 360 W -55 ... +175 TJ  C TJM 175  C Tstg -55 ... +175  C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g TO-220 (IXFP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features       International Standard Packages 175°C Operating Temperature High Current Handling Capability Fast Intrinsic Rectifier Dynamic dV/dt Rated Low RDS(on) Advantages    Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 1mA 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 65A, Notes 1 & 2 © 2018 IXYS CORPORATION, All Rights Reserved   V 4.5 V            200 nA 10 A    500 A   DC-DC Converters Battery Charges Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 10.1 m DS100111B(11/18) IXFA130N10T2 IXFP130N10T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 35 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 65A RG = 3.3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 65A Qgd E 58 S 6600 pF 640 pF 133 pF 16 ns 38 ns 24 ns 25 ns 130 nC 35 nC 42 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.42 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 130 A ISM Repetitive, Pulse Width Limited by TJM 520 A VSD trr IRM QRM IF = 65A, VGS = 0V, Note 1 IF = 65A, VGS = 0V, -di/dt = 100A/s, VR = 50V 1.3 V 100 ns 4.8 A 156 nC TO-220 Outline E A oP A1 H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA130N10T2 IXFP130N10T2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 350 140 VGS = 15V 10V 9V 120 8V 250 100 7V I D - Amperes I D - Amperes VGS = 15V 10V 9V 300 80 60 6V 40 8V 200 150 7V 100 6V 50 20 5V 5V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 0 1.6 2 4 6 VDS - Volts 3.4 140 VGS = 15V 10V 9V 14 2.6 RDS(on) - Normalized I D - Amperes 12 VGS = 10V 3.0 8V 100 7V 80 60 6V 40 I D = 130A 2.2 I D = 65A 1.8 1.4 1.0 20 0.6 5V 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current 4.5 Fig. 6. Drain Current vs. Case Temperature 140 VGS = 10V 15V 4.0 120 o TJ = 175 C 3.5 External Lead Current Limit 100 3.0 I D - Amperes R DS(on) - Normalized 10 Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 120 8 VDS - Volts 2.5 2.0 80 60 40 1.5 1.0 20 o TJ = 25 C 0 0.5 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFA130N10T2 IXFP130N10T2 Fig. 7. Input Admittance Fig. 8. Transconductance 160 100 o TJ = - 40 C 90 140 80 o 25 C 120 g f s - Siemens I D - Amperes 70 100 80 60 o TJ = 150 C 50 40 30 o 25 C 40 o 150 C 60 o - 40 C 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 160 180 10 VDS = 50V 9 300 I D = 65A 8 250 I G = 10mA 7 V GS - Volts I S - Amperes 120 Fig. 10. Gate Charge 350 200 150 o TJ = 150 C 6 5 4 3 100 o 2 TJ = 25 C 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 10 20 30 40 50 60 70 80 90 100 110 120 130 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 10,000 10ms 1,000 Coss 25μs 100μs RDS(on) Limit Ciss f = 1 MHz I D - Amperes Capacitance - PicoFarads 100 I D - Amperes 1ms 100 100ms 10 DC o TJ = 175 C o TC = 25 C Single Pulse Crss 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFA130N10T2 IXFP130N10T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 52 60 RG = 3.3Ω, VGS = 10V 55 45 t r - Nanoseconds t r - Nanoseconds 50 RG = 3.3Ω, VGS = 10V 48 VDS = 50V 40 I D = 130A 35 30 25 VDS = 50V 44 o TJ = 25 C 40 36 o TJ = 125 C 32 I D = 65A 20 28 15 24 10 25 35 45 55 65 75 85 95 105 115 65 125 70 75 80 85 90 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 300 40 tr 250 100 105 110 115 120 125 td(on) tf 45 35 o TJ = 125 C, VGS = 10V Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 100 20 t f - Nanoseconds 25 I D = 130A, 65A td(off) 45 40 35 35 I D = 65A 30 30 25 25 I D = 130A 20 20 t d(off) - Nanoseconds 150 t d(on) - Nanoseconds 30 50 VDS = 50V 40 200 50 15 15 0 10 3 4 5 6 7 8 9 15 10 10 25 35 45 55 RG - Ohms tf td(off) RG = 3.3Ω, VGS = 10V 95 105 115 10 125 35 o TJ = 125 C 30 23 25 22 o TJ = 25 C 21 td(off) 150 o TJ = 125 C, VGS = 10V 45 40 25 tf 110 VDS = 50V 90 120 I D = 65A, 130A 70 90 50 60 30 30 20 15 20 65 70 75 80 85 90 95 10 100 105 110 115 120 125 130 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 10 0 3 4 5 6 7 RG - Ohms 8 9 10 t d(off) - Nanoseconds 26 180 50 t d(off) - Nanoseconds VDS = 50V 24 85 130 55 27 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds 29 28 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f - Nanoseconds 130 RG = 3.3Ω, VGS = 10V VDS = 50V t r - Nanoseconds 95 I D - Amperes IXFA130N10T2 IXFP130N10T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_130N10T2 (V5) 9-30-09-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.