IXFA14N85XHV

Preliminary Technical Information IXFA14N85XHV IXFP14N85X IXFH14N85X X-Class HiPerFETTM Power MOSFET VDSS ID25 = 850V = 14A  550m  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263HV G S TO-220 (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V G D S ID25 TC = 25C 14 A IDM TC = 25C, Pulse Width Limited by TJM 35 A TO-247 (IXFH) IA TC = 25C 7 A EAS TC = 25C 500 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 460 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263HV) Mounting Torque (TO-220 & TO-247) Weight TO-263HV TO-220 TO-247 G D S G = Gate S = Source D (Tab) D (Tab) D (Tab) D = Drain Tab = Drain Features      International Standard Packages High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)   V 5.5 V 100 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1  10 A 1 mA 550 m Applications      © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100761A(06/18) IXFA14N85XHV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 4.6 Ciss Coss IXFP14N85X IXFH14N85X VGS = 0V, VDS = 25V, f = 1MHz 7.7 S 1.0  1043 pF 1110 pF 17 pF 55 177 pF pF 16 ns 30 ns 36 ns 13 ns 30 nC 7 nC 17 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.27 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 14 A ISM Repetitive, pulse Width Limited by TJM 56 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 7A, -di/dt = 100A/μs 116 0.9 15.5 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA14N85XHV IXFP14N85X IXFH14N85X o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 14 VGS = 10V VGS = 10V 24 12 9V 20 9V I D - Amperes I D - Amperes 10 8V 8 6 4 16 12 8V 8 7V 7V 4 2 6V 6V 0 0 0 1 2 3 4 5 6 7 0 8 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 14 4.2 VGS = 10V 9V 12 20 VDS - Volts 3.8 VGS = 10V 3.4 I D - Amperes RDS(on) - Normalized 8V 10 8 7V 6 4 I D = 14A 2.6 2.2 1.8 I D = 7A 1.4 1.0 6V 2 0.6 5V 0.2 0 0 4.0 4 8 12 16 20 -50 24 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 3.5 1.1 BVDSS / VGS(th) - Normalized o TJ = 125 C RDS(on) - Normalized 3.0 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 4 8 12 16 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 20 24 28 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA14N85XHV Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 16 14 14 12 12 10 10 8 6 o TJ = 125 C I D - Amperes I D - Amperes IXFP14N85X IXFH14N85X o 25 C o - 40 C 8 6 4 4 2 2 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 14 45 40 o TJ = - 40 C 12 35 30 o 25 C I S - Amperes g f s - Siemens 10 8 o 125 C 6 25 20 15 o TJ = 125 C 4 10 o TJ = 25 C 2 5 0 0 0 2 4 6 8 10 12 14 0.3 16 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 10,000.0 10 VDS = 425V I D = 7A 1,000.0 I G = 10mA Capacitance - PicoFarads V GS - Volts 8 6 4 2 Ciss 100.0 Coss 10.0 1.0 f = 1 MHz 0 Crss 0.1 0 5 10 15 20 25 30 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA14N85XHV IXFP14N85X IXFH14N85X Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 100 20 18 RDS(on) Limit 25μs 16 I D - Amperes E OSS - MicroJoules 10 100μs 14 12 10 8 1 6 0.1 1ms o 4 TJ = 150 C 2 TC = 25 C Single Pulse o 0 0 100 200 300 400 500 15. 600 Fig.700 0.01 Maximum Transient 10 Thermal Impedance 800 900 100 1,000 VDS - Volts VDS - Volts 1 10ms DC Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.5 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_14N85X(S4-D901) 11-01-16 IXFA14N85XHV TO-263HV Outline 1 = Gate 2 = Source 3 = Drain TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFP14N85X IXFH14N85X Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.