IXFA16N60P3

IXFA16N60P3 IXFP16N60P3 IXFH16N60P3 Polar3 TM HiPerFETTM Power MOSFET VDSS ID25 = 600V = 16A  470m  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 16 A IDM TC = 25C, Pulse Width Limited by TJM 40 A TO-220 (IXFP) IA TC = 25C 8 A EAS TC = 25C 800 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 347 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 1.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V   V 5.0 V 100 nA  Applications  TJ = 125C 25 A 1.5 mA   RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 470 m   © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100419C(6/18) IXFA16N60P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 10 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs 17 S 2.3  1830 pF 217 pF 8.6 pF 20 ns 13 ns 42 ns 8 ns 36 nC 9 nC 13 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.36 C/W RthJC RthCS IXFP16N60P3 IXFH16N60P3 TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 16 A ISM Repetitive, pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM 0.7 7.6 250 ns C A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 IF = 8A, -di/dt = 100A/μs VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA16N60P3 Fig. 1. Output Characteristics @ TJ = 25oC IXFP16N60P3 IXFH16N60P3 Fig. 2. Extended Output Characteristics @ TJ = 25oC 40 16 VGS = 10V 7V 14 VGS = 10V 8V 35 12 30 7V 10 I D - Amperes I D - Amperes 6V 8 6 4 25 20 6V 15 10 2 5 5V 5V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 16 3.0 VGS = 10V 7V 14 20 VDS - Volts VDS - Volts VGS = 10V 2.6 6V RDS(on) - Normalized I D - Amperes 12 10 8 5V 6 4 2.2 I D = 16A I D = 8A 1.8 1.4 1.0 0.6 2 4V 0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Drain Current 3.4 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 18 VGS = 10V 3.0 25 TJ - Degrees Centigrade 16 o TJ = 125 C 12 I D - Amperes R DS(on) - Normalized 14 2.6 2.2 o TJ = 25 C 1.8 10 8 6 1.4 4 1.0 2 0.6 0 0 5 10 15 20 25 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 30 35 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA16N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 30 20 IXFP16N60P3 IXFH16N60P3 o TJ = - 40 C 18 25 16 o g f s - Siemens I D - Amperes 14 12 10 o 8 TJ = 125 C o 25 C o 125 C 15 10 o 6 25 C 20 - 40 C 4 5 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 2 4 6 8 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 12 14 16 18 20 22 Fig. 10. Gate Charge 50 10 45 9 40 8 35 7 30 6 VGS - Volts I S - Amperes 10 I D - Amperes 25 20 VDS = 300V I D = 8A I G = 10mA 5 4 o TJ = 125 C 15 3 o TJ = 25 C 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 4 8 VSD - Volts 12 16 20 24 28 32 36 QG - NanoCoulombs Fig. 11. Capacitance 1 10,000 Fig. 12. Maximum Transient Thermal Impedance f = 1 MHz 1,000 Z (th)JC - K / W Capacitance - PicoFarads Ciss Coss 100 0.1 0.01 10 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_16N60P3(W5)11-29-11 IXFA16N60P3 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source © 2018 IXYS CORPORATION, All Rights Reserved IXFP16N60P3 IXFH16N60P3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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