IXFA18N60X

Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X X-Class HiPerFETTM Power MOSFET VDSS ID25 = 600V = 18A  230m  RDS(on) TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 18 A IDM TC = 25C, Pulse Width Limited by TJM 36 A IA TC = 25C 5 A EAS TC = 25C 500 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 320 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C T LT L TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-247 & TO-220) Weight TO-263 TO-220 TO-247 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved DS D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings V 4.5 V 100 nA TJ = 125C G 10 A 500 A 230 m Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100660A(5/15) IXFA18N60X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 6 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 10 S 3.3  1440 pF 1110 pF 14 pF 84 255 pF pF 20 ns 30 ns 63 ns 24 ns 35 nC 8 nC 18 nC Crss IXFP18N60X IXFH18N60X Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.39 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 18 A ISM Repetitive, pulse Width Limited by TJM 72 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 9A, -di/dt = 100A/μs 127 705 11 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA18N60X Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 18 45 VGS = 10V 9V 16 VGS = 10V 40 14 35 8V 9V 12 30 10 I D - Amperes I D - Amperes IXFP18N60X IXFH18N60X 7V 8 6 25 8V 20 15 6V 4 7V 10 2 6V 5 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.8 18 VGS = 10V 8V 16 VGS = 10V 3.4 3.0 RDS(on) - Normalized 14 7V 12 I D - Amperes 20 VDS - Volts 10 8 6V 6 2.6 I D = 18A 2.2 1.8 I D = 9A 1.4 1.0 4 0.6 2 5V 0.2 0 0 1 2 3 4 5 6 7 8 9 10 -50 11 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 4.5 VGS = 10V 4.0 1.2 BVDSS / VGS(th) - Normalized TJ = 125ºC 3.5 R DS(on) - Normalized -25 VDS - Volts 3.0 2.5 TJ = 25ºC 2.0 1.5 1.0 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 5 10 15 20 25 30 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 35 40 45 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA18N60X Fig. 8. Input Admittance 20 25 16 20 I D - Amperes I D - Amperes Fig. 7. Maximum Drain Current vs. Case Temperature 12 8 15 TJ = 125ºC 25ºC - 40ºC 10 5 4 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 20 60 TJ = - 40ºC 18 50 16 14 25ºC 40 I S - Amperes g f s - Siemens IXFP18N60X IXFH18N60X 12 125ºC 10 8 30 TJ = 125ºC 20 6 TJ = 25ºC 4 10 2 0 0 0 4 8 12 16 20 24 28 32 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 10,000 VDS = 300V Capacitance - PicoFarads 8 V GS - Volts Ciss I D = 9A I G = 10mA 6 4 1,000 Coss 100 10 2 Crss f = 1 MHz 1 0 0 5 10 15 20 25 30 35 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA18N60X IXFP18N60X IXFH18N60X Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 100 14 RDS(on) Limit 12 25µs I D - Amperes EOSS - MicroJoules 10 100µs 10 8 6 4 1 1ms 0.1 TJ = 150ºC 10ms DC TC = 25ºC Single Pulse 2 0 0.01 0 100 200 300 400 500 600 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: F_18N60X(J4-R4T45) 5-20-15-A IXFA18N60X TO-220 Outline TO-263 Outline IXFP18N60X IXFH18N60X TO-247 Outline Pins: 1 - Gate 2 - Drain 3 - Source 1. Gate 2,4. Drain 3. Source 1 - Gate 2,4 - Drain 3 - Source Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.