IXFA20N85XHV

IXFA20N85XHV X-Class HiPerFETTM Power MOSFET VDSS ID25 = 850V = 20A  330m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263HV Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 850 V G VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 20 A IDM TC = 25C, Pulse Width Limited by TJM 50 A S D (Tab) G = Gate S = Source IA TC = 25C 10 A EAS TC = 25C 800 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 540 W -55 ... +150 C TJM 150 C  Tstg -55 ... +150 C  300 50 260 °C °C/min °C 10..65 / 2.2..14.6 N/lb 2.5 g TJ Features  TL dT/dt TSOLD Maximum Lead Temperature for Soldering Heating / Cooling rate, 175C - 210C 1.6 mm (0.062in.) from Case for 10s FC Mounting Force Weight     Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 2.5mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 5.5 V  V   © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications 100 nA TJ = 125C International Standard Package High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D = Drain Tab = Drain 25 A 1.5 mA   Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 330 m DS100897A(4/18) IXFA20N85XHV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 6 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 10 S 0.8  1660 pF 1730 pF 24 pF 67 270 pF pF 20 ns 28 ns 44 ns 20 ns 63 nC 12 nC 26 nC Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.23 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 20 A ISM Repetitive, pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 20A, -di/dt = 100A/μs 190 1.6 16.5 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA20N85XHV o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 20 45 VGS = 10V VGS = 15V 18 40 11V 16 35 12 10 8 10V 30 9V I D - Amperes I D - Amperes 14 8V 25 9V 20 15 6 8V 10 4 7V 2 5 7V 6V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 20 3.4 VGS = 10V 18 VGS = 10V 3.0 9V 16 2.6 12 RDS(on) - Normalized 14 I D - Amperes 20 VDS - Volts 8V 10 8 7V 6 I D = 20A 2.2 I D = 10A 1.8 1.4 1.0 4 0.6 6V 2 0.2 0 0 3.4 2 4 6 8 10 12 14 16 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 BVDSS / VGS(th) - Normalized VGS = 10V 3.0 o RDS(on) - Normalized -50 18 TJ = 125 C 2.6 2.2 1.8 o TJ = 25 C 1.4 1.1 BVDSS 1.0 0.9 VGS(th) 0.8 1.0 0.6 0.7 0 5 10 15 20 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 25 30 35 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA20N85XHV Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 20 20 18 16 16 14 I D - Amperes I D - Amperes o 12 8 TJ = 125 C 12 o 25 C o - 40 C 10 8 6 4 4 2 0 0 -50 -25 0 25 50 75 100 125 4.0 150 4.5 5.0 5.5 6.0 TC - Degrees Centigrade 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 18 50 o TJ = - 40 C 16 45 40 14 o 12 35 o 125 C I S - Amperes g f s - Siemens 25 C 10 8 6 30 25 20 o TJ = 125 C 15 4 o TJ = 25 C 10 2 5 0 0 0 2 4 6 8 10 12 14 16 18 20 0.3 0.4 0.5 0.6 I D - Amperes 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 16 10,000 VDS = 425V 14 Ciss I D = 10A Capacitance - PicoFarads I G = 10mA 12 VGS - Volts 0.7 10 8 6 4 1,000 Coss 100 10 2 Crss f = 1 MHz 1 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA20N85XHV Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 25 RDS(on) Limit 25μs 20 100μs 15 I D - Amperes EOSS - MicroJoules 10 10 1 1ms o TJ = 150 C 0.1 5 o TC = 25 C Single Pulse 0 10ms DC 0.01 0 100 200 300 400 500 VDS - Volts 600 700 800 900 10 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_20N85X(S5-D901) 2-09-16 IXFA20N85XHV TO-263HV Outline 1 = Gate 2 = Source 3 = Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.