IXFA220N06T3

Advance Technical Information IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 TrenchT3TM HiperFETTM Power MOSFET VDSS ID25 = 60V = 220A   4m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 60 V VDGR TJ = 25C to 175C, RGS = 1M 60 V VGSM Transient  20 V ID25 ILRMS TC = 25C Lead Current Limit, RMS 220 160 A A IDM TC = 25C, Pulse Width Limited by TJM 500 A IA TC = 25C 110 A EAS TC = 25C 900 mJ PD TC = 25C 440 W TO-220AB (IXFP) -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ SOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TL 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb m/lb.in 2.5 3.0 6.0 g g g G G VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V             200 nA 10 A TJ = 150C RDS(on) V 4.0 VGS = 10V, ID = 100A, Notes 1, 2 © 2016 IXYS CORPORATION, All Rights Reserved D (Tab) D = Drain Tab = Drain Features      60 S International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Characteristic Values Min. Typ. Max. VGS = 0V, ID = 250A D G = Gate S = Source  BVDSS D (Tab) TO-247 (IXFH)  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) DS 1 mA 4 m   Easy to Mount Space Savings High Power Density Applications    DC-DC Converters & Off-Line UPS Primary-Side Switch High Current Switching Applications DS100730(5/16) IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 87 Ciss Coss 145 S 8500 pF 970 pF 50 pF 1.7  24 ns 20 ns 46 ns 17 ns 136 nC 44 nC 30 nC VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.34 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 220 A ISM Repetitive, Pulse Width Limited by TJM 880 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr IF = 110A, VGS = 0V IRM -di/dt = 100A/s VR = 40V QRM 38 ns 1.9 A 37 nC Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 Fig. 1. Output Characteristics @ TJ = 25ºC VGS = 15V 10V 8V 200 Fig. 2. Extended Output Characteristics @ TJ = 25ºC VGS = 10V 350 7V 7V 300 250 6V I D - Amperes I D - Amperes 160 120 80 200 6V 150 100 5V 40 5V 50 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 2 3 5 6 7 8 9 Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Normalized RDS(on) to ID = 110A Value vs. Junction Temperature VGS = 15V 10V 8V 7V 2.0 6V 160 120 80 10 VGS = 10V 2.2 RDS(on) - Normalized 200 5V 1.8 ID = 220A 1.6 ID = 110A 1.4 1.2 1.0 40 4V 0.8 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 VDS - Volts 2.6 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 180 VGS = 10V 15V 2.4 25 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) to ID = 110A vs. Drain Current 2.8 160 External Lead Current Limit 140 2.2 120 TJ = 175ºC 2.0 I D - Amperes RDS(on) - Normalized 4 VDS - Volts 2.4 I D - Amperes 1 VDS - Volts 1.8 1.6 100 80 60 1.4 1.2 40 TJ = 25ºC 20 1.0 0 0.8 0 50 100 150 200 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 Fig. 8. Transconductance Fig. 7. Input Admittance 300 200 180 VDS = 10V 160 g f s - Siemens 140 I D - Amperes TJ = - 40ºC VDS = 10V 250 120 100 80 TJ = 150ºC 60 200 25ºC 150 150ºC 100 25ºC - 40ºC 40 50 20 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 40 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 160 200 240 Fig. 10. Gate Charge 300 10 VDS = 30V 9 250 I D = 110A 8 I G = 10mA 7 200 6 VGS - Volts I S - Amperes 120 I D - Amperes 150 TJ = 150ºC 5 4 100 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 20 60 80 100 120 140 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit f = 1 MHz 100µs Ciss 10,000 100 I D - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs VSD - Volts Coss 1,000 100 External Lead Current Limit 10 1ms 1 Crss TJ = 175ºC 10ms TC = 25ºC Single Pulse DC 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 30 28 RG = 5Ω , VGS = 10V RG = 5Ω , VGS = 10V 26 VDS = 30V 26 VDS = 30V 24 t r - Nanoseconds t r - Nanoseconds Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 22 18 I D = 110A TJ = 25ºC 22 20 18 16 TJ = 150ºC 14 I D = 220A 14 12 10 10 25 50 75 100 125 150 110 120 130 140 150 TJ - Degrees Centigrade tr 300 VDS = 30V 40 180 35 I D = 220A, 110A 120 150 90 5 0 0 20 25 30 35 40 45 VDS = 30V tf td(off) 80 I D = 110A 40 50 tf 500 14 40 TJ = 25ºC 12 30 10 170 180 190 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 200 210 20 220 t f - Nanoseconds t f - Nanoseconds 50 160 30 150 125 600 td(off) 500 TJ = 150ºC, VGS = 10V 400 400 I D = 220A 300 300 I D = 110A 200 200 100 100 0 0 5 10 15 20 25 30 RG - Ohms 35 40 45 50 t d(off) - Nanoseconds 60 16 150 100 VDS = 30V t d(off) - Nanoseconds TJ = 150ºC 18 140 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 600 100 70 130 50 I D = 220A 80 20 120 70 60 25 50 90 VDS = 30V 110 90 I D = 220A 10 RG = 5Ω, VGS = 10V 22 100 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 220 110 td(off) RG - Ohms 26 210 15 30 0 tf 20 50 15 200 25 60 10 190 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 30 100 5 180 t d(off) - Nanoseconds 150 200 170 RG = 5Ω, VGS = 10V t d(on) - Nanoseconds 250 t r - Nanoseconds td(on) TJ = 150ºC, VGS = 10V 210 t f - Nanoseconds Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 350 160 I D - Amperes IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-263 Outline TO-220 Outline TO-247 Outline D A A2 A2 Q S + R A + 0K M D B M 0P O B E D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L 1 = Gate 2 = Drain 3 = Source 4 = Drain A1 c b b2 b4 e + J M C AM O Pins: 1 - Gate 3 - Source PINS: 1 - Gate 2, 4 - Drain 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_220N06T3(U5-M05) 5-27-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.