IXFA22N60P3

IXFA22N60P3 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) VDSS ID25 = 600V = 22A   390m RDS(on) TO-3P (IXFQ) TO-220 (IXFP) G S G D S D (Tab) G D D (Tab) D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C 22 A IDM TC = 25C, Pulse Width Limited by TJM 55 A IA TC = 25C 11 A EAS TC = 25C 400 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns PD TC = 25C 500 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-247, TO-220 & TO-3P) 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 1.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TO-247 (IXFH) G © 2018 IXYS CORPORATION, All Rights Reserved D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications  V  TJ = 125C S 5.0 V           100 nA 25 A 1.25 mA    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 390 m DS100321D(6/18) IXFA22N60P3 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 14 Ciss Coss 24 S 2600 pF 265 pF 3.4 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 2.1 ns ns ns 19 ns 38 nC 10 nC 11 nC 0.50 0.25 0.25 C/W C/W C/W RG = 1 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 (TO-220) (TO-247 & TO-3P) 28 17 Qgd RthJC RthCS  54 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qg(on) Qgs  Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 22 A ISM Repetitive, Pulse Width Limited by TJM 88 A VSD IF = IS, VGS = 0V, Note 1 1.4 V 250 ns trr IRM QRM Note IF = 11A, -di/dt = 100A/s VR = 100V, VGS = 0V 8.0 A 0.8 μC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA22N60P3 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 22 45 VGS = 10V 7V 20 40 18 VGS = 10V 35 7V 6V 14 30 I D - Amperes I D - Amperes 16 12 10 8 25 20 6V 15 6 10 4 5 5V 2 5V 0 0 0 1 2 3 4 5 6 7 8 0 9 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 22 3.4 VGS = 10V 7V 20 20 VDS - Volts VDS - Volts VGS = 10V 3.0 18 6V RDS(on) - Normalized I D - Amperes 16 14 12 10 8 5V 6 2.6 2.2 I D = 22A 1.8 I D = 11A 1.4 1.0 4 0.6 2 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 11A Value vs. Drain Current 3.4 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 24 VGS = 10V 3.0 20 o 2.6 16 I D - Amperes RDS(on) - Normalized TJ = 125 C 2.2 o TJ = 25 C 1.8 12 8 1.4 4 1.0 0.6 0 0 5 10 15 20 25 30 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 35 40 45 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA22N60P3 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Fig. 8. Transconductance Fig. 7. Input Admittance 35 45 o TJ = - 40 C 40 30 35 o TJ = 125 C o 25 C o - 40 C 20 g f s - Siemens I D - Amperes 25 15 o 25 C 30 o 25 125 C 20 15 10 10 5 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 5 10 15 VGS - Volts 20 25 30 35 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 40 VDS = 300V 9 35 I D = 11A 8 I G = 10mA 30 V GS - Volts I S - Amperes 7 25 20 15 5 4 3 o TJ = 125 C 10 6 o TJ = 25 C 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 VSD - Volts Fig. 11. Capacitance 10,000 f = 1 MHz 20 25 30 35 40 Fig. 12. Forward-Bias Safe Operating Area 100 RDS(on) Limit Ciss 25μs 100μs 1,000 10 I D - Amperes Capacitance - PicoFarads 15 QG - NanoCoulombs Coss 100 1 10 o TJ = 150 C Crss o TC = 25 C Single Pulse 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA22N60P3 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K/ W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved 0.1 1 10 IXFA22N60P3 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 TO-263 Outline TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_22N60P3(W6)03-26-12-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.