IXFA230N075T2

IXFA230N075T2 IXFP230N075T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 75V = 230A Ω ≤ 4.2mΩ TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient ± 20 V ID25 TC = 25°C (Chip Capability) 230 A ILRMS Lead Current Limit, RMS 120 A IDM TC = 25°C, Pulse Width Limited by TJM 700 A IA TC = 25°C 115 A EAS TC = 25°C 850 mJ PD TC = 25°C 480 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 TO-220AB (IXFP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) z Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 75 VGS(th) VDS = VGS, ID = 1mA 2.0 IGSS VGS = ± 20V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 25 μA TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved 4.0 Easy to Mount Space Savings High Power Density V Applications V z 250 μA 4.2 mΩ z z z Automotive - Motor Drives - 12V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary- Side Switch High Current Switching Applications DS100074A(03/10) IXFA230N075T2 IXFP230N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 85 S 10.5 nF 1165 pF 125 pF 23 ns 18 ns 33 ns 15 ns 178 nC 53 nC 41 nC Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.31 °C/W RthJC RthCH TO-263 (IXFA) Outline TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, Pulse Width Limited by TJM 900 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 115A, VGS = 0V IRM QRM Note -di/dt = 100A/μs VR = 37V 59 ns 3.6 A 106 nC TO-220 (IXFP) Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA230N075T2 IXFP230N075T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 240 320 VGS = 15V 10V 9V 200 280 ID - Amperes 7V 120 8V 240 8V 160 ID - Amperes VGS = 15V 10V 9V 80 200 7V 160 120 6V 6V 80 40 40 5V 0 5V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 0.5 1.0 1.5 2.5 3.0 3.5 4.0 4.5 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 240 2.6 VGS = 15V 10V 9V 8V 2.4 VGS = 10V 2.2 R DS(on) - Normalized 200 160 ID - Amperes 2.0 VDS - Volts VDS - Volts 7V 120 6V 80 2.0 1.8 I D = 230A 1.6 I D = 115A 1.4 1.2 1.0 0.8 40 5V 0.6 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 115A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 140 External Lead Current Limit 2.4 120 TJ = 175ºC 2.0 100 ID - Amperes R DS(on) - Normalized 2.2 1.8 VGS = 10V 1.6 15V - - - - 1.4 1.2 80 60 40 1.0 20 TJ = 25ºC 0.8 0 0.6 0 50 100 150 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXFA230N075T2 IXFP230N075T2 Fig. 8. Transconductance Fig. 7. Input Admittance 160 140 140 120 TJ = - 40ºC TJ = 150ºC 25ºC - 40ºC 100 100 25ºC 80 150ºC g f s - Siemens ID - Amperes 120 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 VGS - Volts 270 9 240 8 210 7 180 6 VGS - Volts IS - Amperes 10 150 120 TJ = 150ºC 120 140 160 VDS = 38V I D = 115A I G = 10mA 5 4 3 60 2 TJ = 25ºC 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 VSD - Volts 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 RDS(on) Limit f = 1 MHz Ciss 25µs 10,000 100 ID - Amperes Capacitance - PicoFarads 100 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 90 80 ID - Amperes Coss 1,000 100µs External Lead Current Limit 1ms 10 10ms Crss DC 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100ms 100 IXFA230N075T2 IXFP230N075T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 22 26 RG = 2Ω , VGS = 10V RG = 2Ω , VGS = 10V 24 VDS = 38V 20 VDS = 38V 20 I t r - Nanoseconds t r - Nanoseconds 22 = 230A D 18 16 I D = 115A 18 TJ = 25ºC 16 14 14 TJ = 125ºC 12 12 10 110 10 25 35 45 55 65 75 85 95 105 115 125 120 130 140 150 TJ - Degrees Centigrade 50 28 tf 26 RG = 2Ω, VGS = 10V 40 25 30 20 25 15 20 10 15 12 10 10 5 6 8 10 12 14 45 20 40 18 35 16 30 20 25 35 45 55 RG = 2Ω, VGS = 10V VDS = 38V 60 280 55 240 40 16 35 14 30 TJ = 25ºC 12 140 150 160 170 180 190 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 210 220 25 20 230 t f - Nanoseconds 45 18 130 85 95 105 115 15 125 280 tf td(off) - - - - 240 TJ = 125ºC, VGS = 10V VDS = 38V 200 200 I D = 115A 160 160 120 120 80 80 40 I D 40 = 230A 0 0 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds 50 TJ = 125ºC 120 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 20 10 110 65 TJ - Degrees Centigrade 26 22 25 I D = 230A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 50 I D = 115A 14 16 55 VDS = 38V RG - Ohms tf 230 60 td(off) - - - - 22 35 4 220 65 24 30 2 210 t d(off) - Nanoseconds 35 200 50 45 I D = 230A, 115A VDS = 38V 190 30 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 40 180 55 t f - Nanoseconds tr 170 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 45 160 ID - Amperes IXFA230N075T2 IXFP230N075T2 Fig. 19. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_230N075T2(V6)2-26-10-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.