IXFA36N60X3

IXFA36N60X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated = 600V = 36A  90m G TO-263 (IXFA) S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 36 A IDM TC = 25C, Pulse Width Limited by TJM 48 A IA TC = 25C 8 A EAS TC = 25C 750 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 446 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 260 °C 10..65 / 2.2..14.6 N/lb 2.5 g TJ TSOLD Plastic Body for 10s FC Mounting Force Weight G = Gate S = Source D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 2.5mA 3.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 ©2021 Littelfuse, Inc.   V 5.0  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls V 100 nA TJ = 125C 25 A 1 mA 90 m DS101028B(04/21) IXFA36N60X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 16 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 26 S 2.1  2030 pF 3050 pF 3.6 pF 110 510 pF pF Effective Output Capacitance Co(er) Co(tr) Energy related td(on) tr Resistive Switching Times 23 8 ns ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 45 ns 4 ns 29 nC 10 nC 10 nC td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.28 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 36 A Repetitive, Pulse Width Limited by TJM 144 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 18A, -di/dt = 100A/µs 180 1.6 18.0 VR = 100V ns µC A Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 7,157,338B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 IXFA36N60X3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 40 90 V GS = 10V 9V 35 VGS = 10V 9V 80 8V 70 60 25 I D - Amperes I D - Amperes 30 7V 20 15 8V 50 40 7V 30 6V 10 20 6V 5 10 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 0 10 15 20 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 18A Value vs. Junction Temperature 3.8 VGS = 10V 3.4 35 8V RDS(on) - Normalized 7V 25 20 6V 15 VGS = 10V 3.0 30 I D - Amperes 5 VDS - Volts 40 10 2.6 I D = 36A 2.2 1.8 I D = 18A 1.4 1.0 5V 5 0.6 4V 0 0 1 2 3 4 5 6 7 0.2 8 9 -50 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 VGS = 10V 4.5 -25 VDS - Volts 5.0 1.2 BVDSS / VGS(th) - Normalized TJ = 125oC 4.0 RDS(on) - Normalized 5V 0 0 3.5 3.0 2.5 2.0 TJ = 25oC 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 10 20 30 40 50 I D - Amperes ©2021 Littelfuse, Inc. 60 70 80 90 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA36N60X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 40 50 45 35 VDS = 10V 40 30 I D - Amperes I D - Amperes 35 25 20 15 TJ = 125oC 25oC - 40oC 30 25 20 15 10 10 5 5 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 6.0 6.5 7.0 7.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 120 50 45 V DS = 10V TJ = - 40oC 40 100 35 80 I S - Amperes g f s - Siemens 5.5 VGS - Volts TC - Degrees Centigrade 25oC 30 25 20 125oC 60 TJ = 125oC 40 15 TJ = 25oC 10 20 5 0 0 0 5 10 15 20 25 30 35 40 0.3 45 0.4 0.5 0.6 0.7 Fig. 11. Gate Charge 0.9 1 1.1 1.2 1.3 1.4 Fig. 12. Capacitance 10 100000 VDS = 300V I D = 18A I G = 10mA 9 10000 Capacitance - PicoFarads 8 7 VGS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 1000 Coss 100 10 1 0 0 5 10 15 20 25 30 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. C rss f = 1 MHz 1 0.1 1 10 100 VDS - Volts 1000 IXFA36N60X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 20 RDS(on) Limit 10 I D - Amperes EOSS - MicroJoules 16 12 8 100µs 1 TJ = 150oC TC = 25oC Single Pulse 4 0 1ms 0.1 0 100 200 300 400 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 0.5 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second ©2021 Littelfuse, Inc. IXYS REF: F_36N60X3 (735) 10-26-20 IXFA36N60X3 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source Littelfuse reserves the right to change limits, test conditions and dimensions. IXFA36N60X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021 Littelfuse, Inc.