IXFA5N50P3

IXFY5N50P3 IXFA5N50P3 IXFP5N50P3 Polar3 TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 5A  1.65  TO-252 (IXFY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 5 A IDM TC = 25C, Pulse Width Limited by TJM 12 A IA TC = 25C 2.5 A EAS TC = 25C 100 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 114 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 TO-263 (IXFA) G S D (Tab) TO-220 (IXFP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V 5 A 50 μA   V 5.0 V  Applications  TJ = 125C   RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.65    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100454B(6/18) IXFY5N50P3 IXFA5N50P3 IXFP5N50P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 2.5 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 4.2 S 6.0  370 pF 50 pF 3 pF 14 ns 13 ns 28 ns 12 ns 6.9 nC 1.9 nC 2.6 nC 1.10 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 5 A Repetitive, Pulse Width Limited by TJM 20 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 2.5A, -di/dt = 100A/μs 0.33 5.30 VR = 100V 250 ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFY5N50P3 IXFA5N50P3 IXFP5N50P3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 5 9 VGS = 10V 8V 4 7 7V 7V 6 I D - Amperes I D - Amperes VGS = 10V 8V 8 3 6V 2 5 4 3 6V 2 1 5V 1 0 5V 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 5 3.8 VGS = 10V 7V 30 VGS = 10V 3.4 4 RDS(on) - Normalized 3.0 6V I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3 2 5V 2.6 I D = 5A 2.2 1.8 I D = 2.5A 1.4 1.0 1 0.6 4V 0 0.2 0 3.5 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature VGS = 10V 150 5 o 3.0 TJ = 125 C 4 2.5 I D - Amperes RDS(on) - Normalized 20 VDS - Volts VDS - Volts 2.0 o TJ = 25 C 1.5 3 2 1 1.0 0.5 0 0 1 2 3 4 5 6 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 7 8 9 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFY5N50P3 IXFA5N50P3 IXFP5N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 7 8 6 7 o TJ = - 40 C 6 5 4 g f s - Siemens I D - Amperes o o TJ = 125 C o 25 C 3 o - 40 C 2 25 C 5 4 o 125 C 3 2 1 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 5 6 7 8 Fig. 10. Gate Charge 10 16 VDS = 250V 9 14 I D = 2.5A 8 12 I G = 10mA 7 10 VGS - Volts I S - Amperes 4 I D - Amperes 8 6 o TJ = 125 C 6 5 4 3 o TJ = 25 C 4 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 2 VSD - Volts Fig. 11. Capacitance 4 5 6 7 Fig. 12. Forward-Bias Safe Operating Area 100 1,000 RDS(on) Limit C iss 100 10 I D - Amperes Capacitance - PicoFarads 3 QG - NanoCoulombs C oss 25μs 100μs 1 10 o TJ = 150 C o f = 1 MHz TC = 25 C Single Pulse C rss 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFY5N50P3 IXFA5N50P3 IXFP5N50P3 Fig. 13. Maximum Transient Thermal Impedance 10 Fig. 13. Maximum Transient Thermal Impedance aaaaaa 2 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_5N50P3(K2) 3-23-12 IXFY5N50P3 IXFA5N50P3 IXFP5N50P3 TO-252 Outline TO-263 Outline TO-220 Outline A E C2 L1 L2 2 A1 3 A oP D1 D 1 E E1 A1 H1 Q 4 H D2 D D1 b b2 L3 e c 0.43 [11.0] E1 e A2 EJECTOR 0 PIN L1 L 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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