IXFA6N120P-TRL

IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A  2.75  RDS(on) TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 6 A IDM TC = 25C, Pulse Width Limited by TJM 18 A TO-220AB (IXFP) IA TC = 25C 3 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 250 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-247 & TO-220) Weight TO-263 TO-220 TO-247 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g G DS D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features        International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG & RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1200 VGS(th) VDS = VGS, ID = 1mA 2.5 5.0  V Applications V  IGSS VGS = 30V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V 10 A 1 mA RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved 2.75 Easy to Mount Space Savings       DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100202C(0515) IXFA6N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 3.0 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf S 1.8  2830 pF 150 pF 30 pF 24 ns 11 ns 60 ns 14 ns 92 nC 15 nC 50 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS RthCS TO-220 Outline 5.0 Crss IXFP6N120P IXFH6N120P Pins: 1 - Gate 3 - Source 2 - Drain 0.50 °C/W TO-220 TO-247 0.50 0.21 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 6 A Repetitive, Pulse Width Limited by TJM 24 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr IF = 3A, VGS = 0V 300 ns IRM -di/dt = 100A/s VR = 100V QRM Note 7.8 A 1.1 μC TO-247 Outline 1: Pulse test, t  300s, duty cycle, d 2%. 1 - Gate 2,4 - Drain 3 - Source TO-263 Outline 1. Gate 2,4. Drain 3. Source Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA6N120P IXFP6N120P IXFH6N120P Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 12 6 VGS = 10V 7V VGS = 10V 5 10 7V 8 6V I D - Amperes I D - Amperes 4 3 2 6 6V 4 1 2 5V 5V 4V 0 0 0 2 4 6 8 10 12 14 16 0 5 10 VDS - Volts 15 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 3A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.0 6 VGS = 10V RDS(on) - Normalized 6V I D - Amperes VGS = 10V 2.6 5 4 3 5V 2 2.2 I D = 6A 1.8 I D = 3A 1.4 1.0 1 0.6 4V 0 0.2 0 4 8 12 16 20 24 28 32 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 3A Value vs. Drain Current 2.6 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 7 VGS = 10V 2.4 25 TJ - Degrees Centigrade VDS - Volts 6 TJ = 125ºC 5 2.0 I D - Amperes RDS(on) - Normalized 2.2 1.8 1.6 4 3 1.4 2 TJ = 25ºC 1.2 1 1.0 0.8 0 0 1 2 3 4 5 6 7 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 8 9 10 11 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA6N120P Fig. 7. Input Admittance Fig. 8. Transconductance 10 11 9 10 8 9 g f s - Siemens I D - Amperes TJ = - 40ºC 8 7 6 TJ = 125ºC 25ºC - 40ºC 5 4 25ºC 7 125ºC 6 5 4 3 3 2 2 1 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 1 2 3 4 5 6 7 8 9 10 70 80 90 100 I D - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 18 10 16 9 VDS = 600V I D = 3A 8 14 I G = 10mA 7 12 6 VGS - Volts I S - Amperes IXFP6N120P IXFH6N120P 10 8 5 4 6 3 TJ = 125ºC 4 TJ = 25ºC 2 2 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 10 20 30 40 50 60 QG - NanoCoulombs VSD - Volts Fig.12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit 10 C iss 1,000 ID - Amperes Capacitance - PicoFarads f = 1 MHz C oss 100µs 1ms 1 10ms 100 0.1 100ms TJ = 150ºC DC TC = 25ºC Single Pulse C rss 10 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXFA6N120P IXFP6N120P IXFH6N120P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: F_6N120P(6C) 5-06-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.