IXFA76N15T2

IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 150V = 76A   22m TO-263 (IXFA) G S D (Tab) TO-220 (IXFP) Symbol Test Conditions VDSS TJ = 25C to 175C Maximum Ratings 150 V VDGR TJ = 25C to 175C, RGS = 1M 150 V VGSS VGSM Continuous Transient  20  30 V V ID25 TC = 25C 76 A IDM TC = 25C, Pulse Width Limited by TJM 200 A IA TC = 25C 38 A EAS TC = 25C 500 mJ dv/dt IS  IDM,, VDD  VDSS,TJ  175C 15 V/ns PD TC = 25C 350 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g G D S TO-247 (IXFH) G BVDSS VGS = 0V, ID = 250A 150 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V       V    22 m     © 2018 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications 5 A VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 D = Drain Tab = Drain International Standard Packages 175°C Operating Temperature High Current Handling Capability Fast Intrinsic Rectifier Dynamic dv/dt Rated Low RDS(on) V 750  A D (Tab) Advantages              200 nA TJ = 150C RDS(on) 4.5 S Features  Characteristic Values Min. Typ. Max. D G = Gate S = Source  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D (Tab) DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100176C(11/18) IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 50 Ciss Coss 80 S 5800 pF 490 pF 85 pF 17 ns 19 ns 25 ns 14 ns 97 nC 29 nC 30 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.43 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 38A, VGS = 0V, Note 1 trr IF = 38A, VGS = 0V IRM -di/dt = 100A/s VR = 75V QRM 76 A 300 A 1.5 V 69 ns 5.7 A 197 nC Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 80 240 VGS = 15V 10V 70 200 8V 60 7V 160 50 40 I D - Amperes I D - Amperes VGS = 15V 10V 6V 30 7V 120 80 6V 20 40 10 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1.8 2 4 6 8 3.4 80 VGS = 15V 10V 7V 14 16 18 20 22 24 VGS = 10V 3.0 60 2.6 6V RDS(on) - Normalized I D - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 38A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 70 10 VDS - Volts VDS - Volts 50 40 30 5V 20 I D = 76A 2.2 I D = 38A 1.8 1.4 1.0 0.6 10 4V 0 0.2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 VDS - Volts 4.2 75 100 125 150 175 150 175 Fig. 6. Drain Current vs. Case Temperature 80 VGS = 10V 70 3.8 o TJ = 175 C 60 3.4 I D - Amperes RDS(on) - Normalized 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 38A Value vs. Drain Current 4.6 25 3.0 2.6 2.2 1.8 50 40 30 o TJ = 25 C 20 1.4 10 1.0 0.6 0 0 20 40 60 80 100 120 140 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Fig. 7. Input Admittance Fig. 8. Transconductance 140 140 o TJ = - 40 C 120 120 o TJ = 150 C 100 o 25 C g f s - Siemens I D - Amperes 100 o - 40 C 80 60 o 25 C 80 o 150 C 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 VGS - Volts 100 120 140 160 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 240 VDS = 75V 9 200 I D = 38A 8 I G = 10mA 7 160 o TJ = 150 C 120 VGS - Volts I S - Amperes 80 I D - Amperes o TJ = 25 C 80 6 5 4 3 2 40 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 10 20 30 40 Fig. 11. Capacitance 60 70 80 90 100 Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 RDS(on) Limit Ciss 25μs 100 1,000 I D - Amperes Capacitance - PicoFarads 50 QG - NanoCoulombs VSD - Volts Coss 100μs 10 100 1ms 1 Crss o 10ms TJ = 175 C o TC = 25 C Single Pulse f = 1 MHz DC 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 22 22 RG = 5Ω , VGS = 10V RG = 5Ω , VGS = 10V VDS = 75V VDS = 75V 21 t r - Nanoseconds t r - Nanoseconds 21 20 19 I D = 152A 18 I D = 76A 20 o TJ = 125 C o TJ = 25 C 19 18 17 16 17 25 35 45 55 65 75 85 95 105 115 30 125 40 50 60 70 80 TJ - Degrees Centigrade 22 tr 20 16.0 19 15.5 16 I D = 76A, 152A 17 16 12 14 16 tf tf 14.5 24 14.0 22 I D = 76A, 152A 15 13.5 14 13.0 20 25 20 35 45 55 65 75 85 95 105 115 td(off) 17 32 16 30 15 28 o TJ = 125 C 14 26 o TJ = 25 C 13 24 12 11 50 60 70 80 90 t d(off) - Nanoseconds 15 34 18 125 30 tf td(off) 29 o TJ = 125 C, VGS = 10V VDS = 75V 28 14 27 I D = 152A 13 26 I D = 76A 12 25 22 11 24 20 100 110 120 130 140 150 160 10 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 23 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds VDS = 75V 40 26 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 5Ω, VGS = 10V 30 15.0 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 16 160 28 TJ - Degrees Centigrade 17 150 td(off) RG - Ohms 18 t f - Nanoseconds 18 t f - Nanoseconds 17 10 140 VDS = 75V t f - Nanoseconds t r - Nanoseconds 19 8 130 t d(off) - Nanoseconds 18 t d(on) - Nanoseconds 20 6 120 RG = 5Ω, VGS = 10V VDS = 75V 4 110 30 td(on) o TJ = 125 C, VGS = 10V 18 100 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 21 90 I D - Amperes IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_76N15T2(4V)7-02-09 IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source © 2018 IXYS CORPORATION, All Rights Reserved Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.