IXFA90N20X3

IXFA90N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 200V = 90A  12.8m  N-Channel Enhancement Mode Avalanche Rated TO-263 G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 90 A IDM TC = 25C, Pulse Width Limited by TJM 220 A IA TC = 25C 45 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 390 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 50 260 °C °C/min °C 10..65 / 2.2..14.6 N/lb 2.5 g TJ TL dT/dt TSOLD Maximum Lead Temperature for Soldering Heating / Cooling rate, 175C - 210C 1.6 mm (0.062in.) from Case for 10s FC Mounting Force Weight D (Tab) G = Gate S = Source Features          BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 High Power Density Easy to Mount Space Savings Applications  Characteristic Values Min. Typ. Max. International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D = Drain Tab = Drain  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls V 4.5 V 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved 5 300 A A 12.8 m DS100900A(4/18) IXFA90N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 40 RGi Gate Input Resistance Ciss Coss TO-263 (IXFA) Outline 67 S 1.4  5420 pF 930 pF 4 pF VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS 420 1300 pF pF 22 ns 26 ns 62 ns 13 ns 78 nC 23 nC 22 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 1 = Gate 2 = Drain 3 = Source 4 = Drain 0.32 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 90 A Repetitive, pulse Width Limited by TJM 360 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 45A, -di/dt = 100A/μs 95 360 7.6 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA90N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 400 90 VGS = 10V VGS = 10V 8V 80 350 70 7V I D - Amperes 60 I D - Amperes 9V 300 50 6V 40 30 250 8V 200 150 7V 100 20 6V 5V 10 50 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.8 90 VGS = 10V 8V 80 15 VDS - Volts VGS = 10V 7V 2.4 RDS(on) - Normalized 70 I D - Amperes 60 50 6V 40 30 I D = 90A 2.0 I D = 45A 1.6 1.2 5V 20 0.8 10 4V 0.4 0 0 4.5 0.5 1 1.5 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 300 350 400 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA90N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 100 240 200 80 I D - Amperes I D - Amperes 160 60 40 120 80 o TJ = 125 C o 20 25 C 40 o - 40 C 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 180 400 o TJ = - 40 C 160 350 300 o 120 25 C I S - Amperes g f s - Siemens 140 100 o 125 C 80 60 250 200 150 o TJ = 125 C 100 40 o TJ = 25 C 50 20 0 0 0 40 80 120 160 200 0.2 240 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 10 100000 VDS = 100V I D = 45A I G = 10mA Capacitance - PicoFarads VGS - Volts 8 6 4 2 10000 C iss 1000 Coss 100 Crss 10 f = 1 MHz 0 1 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA90N20X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 8 RDS(on) Limit 7 25μs 100 5 I D - Amperes EOSS - MicroJoules 6 4 3 2 100μs 10 1 o TJ = 150 C 1ms o TC = 25 C Single Pulse 1 0 DC 0.1 0 20 40 60 80 100 120 140 160 180 200 1 10 100 10ms 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_90N20X3(25-S202) 5-31-17-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.