IXFB120N50P2

IXFB120N50P2 Polar2TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 500V = 120A ≤ 43mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 120 A IDM TC = 25°C, Pulse Width Limited by TJM 300 A IA TC = 25°C 120 A EAS TC = 25°C 4 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1890 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C FC Mounting Force 30..120/6.7..27 N/lb. 10 g G D S G = Gate S = Source D = Drain Tab = Drain Features z z z z z Fast Intrinsic Diode Dynamic dv/dt Rating Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z Weight Tab z z High Power Density Easy to Mount Space Savings Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z V z z TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 5.0 V ± 200 nA z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC and DC Motor Drives High Speed Power Switching Application 25 μA 2.5 mA 43 mΩ DS100247B(9/11) IXFB120N50P2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 10V, ID = 0.5 • ID25, Note 1 105 S 19 nF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 1860 pF 40 pF 0.83 Ω 43 ns 13 ns 80 ns 12 ns 300 nC 96 nC 94 nC Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs PLUS264TM (IXFB) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.066 °C/W RthJC RthCS 0.130 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 480 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr IF = 0.5 • ID25, VGS = 0V 300 ns QRM -di/dt = 100A/μs VR = 70V IRM 2.0 μC 16.4 A Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB120N50P2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 120 240 VGS = 10V 8V VGS = 10V 100 200 7V 7V 160 ID - Amperes ID - Amperes 80 60 6V 120 40 80 20 40 6V 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 120 3.2 VGS = 10V 7V VGS = 10V 2.8 R DS(on) - Normalized 100 6V 80 ID - Amperes 20 VDS - Volts VDS - Volts 60 40 2.4 I D = 120A 2.0 I D = 60A 1.6 1.2 5V 20 0.8 4V 0 0.4 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 140 2.8 VGS = 10V 2.6 120 TJ = 125ºC 2.4 100 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.0 1.8 1.6 1.4 80 60 40 TJ = 25ºC 1.2 20 1.0 0 0.8 0 20 40 60 80 100 120 140 160 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 180 200 220 240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFB120N50P2 Fig. 7. Input Admittance Fig. 8. Transconductance 120 160 TJ = - 40ºC 140 100 25ºC g f s - Siemens ID - Amperes 120 TJ = 125ºC 25ºC - 40ºC 80 100 60 40 125ºC 80 60 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40 VGS - Volts 60 70 80 90 100 110 120 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 350 10 9 VDS = 250V 8 I G = 10mA 300 I D = 60A 250 7 VGS - Volts IS - Amperes 50 200 150 TJ = 125ºC 100 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 50 VSD - Volts 100 150 200 250 300 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 RDS(on) Limit f = 1 MHz 10,000 100 1,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 100 25µs 100µs 10 1 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFB120N50P2 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_120N50P2(9S)7-02-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.