IXFB132N50P3
Polar3TM HiPerFETTM
Power MOSFET
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
=
=
500V
132A
39m
250ns
PLUS264TM
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
500
V
VDGR
TJ = 25C to 150C, RGS = 1M
500
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
132
A
IDM
TC = 25C, Pulse Width Limited by TJM
330
A
IA
EAS
TC = 25C
TC = 25C
66
2
A
J
dv/dt
IS IDM, VDD VDSS, TJ 150C
35
V/ns
PD
TC = 25C
1890
W
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
30..120/6.7..27
N/lb
10
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
FC
Mounting Force
Weight
G
D
S
G = Gate
S = Source
Tab
D
= Drain
Tab = Drain
Features
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
500
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • IDSS, Note 1
V
5.0
V
200 nA
TJ = 125C
© 2015 IXYS CORPORATION, All Rights Reserved
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
50 A
3 mA
39 m
DS100315C(2/15)
IXFB132N50P3
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
68
VDS = 10V, ID = 60A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
110
S
18.6
nF
1710
pF
12
pF
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
1.16
Qgs
42
ns
18
ns
90
ns
15
ns
267
nC
95
nC
63
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 1 (External)
Qg(on)
PLUS264TM (IXFB) Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgd
RthJC
0.066C/W
RthCS
0.13
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
132
A
ISM
Repetitive, Pulse Width Limited by TJM
530
A
VSD
IF = 100A, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
Note
IF = 66A, -di/dt = 100A/s
1.9
16.4
VR = 100V, VGS = 0V
250 ns
C
A
1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFB132N50P3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
250
140
VGS = 10V
8V
120
VGS = 10V
8V
200
7V
I D - Amperes
I D - Amperes
100
80
60
40
150
7V
100
6V
50
6V
20
5V
5V
0
0
0
1
2
3
4
5
0
6
5
10
15
20
25
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 66A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
140
3.2
VGS = 10V
VGS = 10V
120
2.8
7V
R DS(on) - Normalized
I D - Amperes
100
80
6V
60
40
20
I D = 132A
2.0
I D = 66A
1.6
1.2
0.8
5V
0
0.4
0
3.0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 66A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
140
VGS = 10V
125
150
125
150
120
TJ = 125ºC
2.6
100
2.2
I D - Amperes
RDS(on) - Normalized
2.4
1.8
80
60
TJ = 25ºC
1.4
40
1.0
20
0
0.6
0
50
100
150
I D - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
200
250
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFB132N50P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
160
TJ = - 40ºC
180
140
160
TJ = 125ºC
25ºC
- 40ºC
100
25ºC
140
g f s - Siemens
I D - Amperes
120
80
60
120
125ºC
100
80
60
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
7.5
20
40
60
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
100
120
140
160
Fig. 10. Gate Charge
300
10
VDS = 250V
9
250
I D = 66A
8
I G = 10mA
7
VGS - Volts
200
I S - Amperes
80
I D - Amperes
150
TJ = 125ºC
100
6
5
4
3
TJ = 25ºC
2
50
1
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
40
VSD - Volts
120
160
200
240
280
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1000
100,000
C iss
RDS(on) Limit
10,000
25µs
100
1,000
I D - Amperes
Capacitance - PicoFarads
80
C oss
100
100µs
10
TJ = 150ºC
10
TC = 25ºC
Single Pulse
C rss
f = 1 MHz
1
1ms
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFB132N50P3
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
28
30
RG = 1Ω , VGS = 10V
26
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
RG = 1Ω , VGS = 10V
28
VDS = 250V
VDS = 250V
26
t r - Nanoseconds
t r - Nanoseconds
24
22
I D = 66A
20
18
I D = 100A
24
TJ = 125ºC
22
20
18
TJ = 25ºC
16
16
14
14
12
12
10
25
35
45
55
65
75
85
95
105
115
125
30
40
50
60
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
300
tr
120
24
100
22
td(on) - - - -
TJ = 125ºC, VGS = 10V
250
tf
100
40
50
20
0
5
6
7
8
9
110
VDS = 250V
105
18
100
I D = 100A
16
95
14
90
I D = 66A
85
10
10
25
35
45
55
65
75
85
95
105
115
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
130
300
td(off) - - - -
tf
120
RG = 1Ω, VGS = 10V
110
TJ = 125ºC
20
15
100
90
5
40
50
60
70
80
I D - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
90
400
I D = 100A
VDS = 250V
200
320
150
240
I D = 66A
100
160
80
50
80
70
100
0
TJ = 25ºC
10
480
td(off) - - - -
0
1
2
3
4
5
6
RG - Ohms
7
8
9
10
t d ( o f f ) - Nanoseconds
25
80
125
TJ = 125ºC, VGS = 10V
250
t d ( o f f ) - Nanoseconds
VDS = 250V
30
td(off) - - - -
RG - Ohms
tf
30
4
115
12
0
35
t f - Nanoseconds
t f - Nanoseconds
60
I D = 66A
3
100
RG = 1Ω, VGS = 10V
20
t f - Nanoseconds
t r - Nanoseconds
I D = 100A
2
90
t d ( o f f ) - Nanoseconds
80
t d ( o n ) - Nanoseconds
200
1
80
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
VDS = 250V
150
70
I D - Amperes
IXFB132N50P3
Fig. 19. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Fig. 20. Cauer Thermal Network
i Ri (CW) Ci (J/C)
1
2
3
4
0.0011707
0.0252980
0.0280620
0.0091690
0.0031990
0.0449880
0.7284100
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_132N50P3(K9-W38) 6-02-14-A
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