IXFB150N65X2

IXFB150N65X2 X2-Class HiPerFETTM Power MOSFET VDSS ID25 = = RDS(on)  650V 150A  17m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 150 300 A A IA EAS TC = 25C TC = 25C 20 4 A J PD TC = 25C 1560 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 30..120 / 6.7..27 N/lb 10 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force Weight G D S G = Gate S = Source Tab D = Drain Tab = Drain Features    Low QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 650 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  V 5.0 V 200 nA 50 A 5 mA 17 m DS100688B(03/16) IXFB150N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 56 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz PLUS264TM (IXFB) Outline 88 S 0.57  21.0 nF 12.5 nF 42 pF 600 2800 pF pF 55 ns Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 30 ns 100 ns 13 ns 355 nC 130 nC 110 nC 0.08 C/W RthJC RthCS C/W 0.13 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 150 A ISM Repetitive, Pulse Width Limited by TJM 600 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM 190 IF = 75A, -di/dt = 300A/s 4.6 VR = 100V, VGS = 0V 48.4 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB150N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 300 150 VGS = 10V 9V VGS = 10V 9V 8V 250 200 I D - Amperes I D - Amperes 100 7V 8V 150 7V 100 50 6V 50 6V 5V 5V 0 0 0 0.5 1 1.5 2 2.5 0 3 5 10 VDS - Volts 15 20 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.0 150 VGS = 10V 8V VGS = 10V 2.6 I D - Amperes R DS(on) - Normalized 7V 100 6V 50 5V 2.2 I D = 150A 1.8 I D = 75A 1.4 1.0 0.6 4V 0.2 0 0 3.4 1 2 3 4 5 -50 6 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 1.1 2.6 BVDSS / VGS(th) - Normalized RDS(on) - Normalized 3.0 TJ = 125ºC 2.2 1.8 1.4 TJ = 25ºC 1.0 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.6 0.5 0 50 100 150 200 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 250 300 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFB150N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature 160 Fig. 8. Input Admittance 200 180 140 160 120 I D - Amperes I D - Amperes 140 100 80 60 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 40 40 20 20 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 180 300 TJ = - 40ºC 160 250 25ºC 120 200 I S - Amperes g f s - Siemens 140 125ºC 100 80 60 150 100 TJ = 125ºC 40 TJ = 25ºC 50 20 0 0 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 I D - Amperes 0.8 1.0 1.2 1.4 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 1,000,000 VDS = 325V I G = 10mA Capacitance - PicoFarads VGS - Volts 100,000 I D = 75A 8 6 4 2 Ciss 10,000 C oss 1,000 100 10 Crss f = 1 MHz 0 1 0 50 100 150 200 250 300 350 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFB150N65X2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 120 RDS(on) Limit 100 25μs 100μs I D - Amperes EOSS - MicroJoules 100 80 60 10 40 1ms 1 TJ = 150ºC 20 TC = 25ºC Single Pulse 10ms 0.1 0 0 100 200 300 400 500 10 600 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_150N65X2(G9-S602) 11-17-15 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.