IXFB170N30P

IXFB170N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = =   300V 170A  18m 200ns PLUS264TM Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Maximum Ratings 300 300 V V VGSS VGSM Continuous Transient 20 30 V V ID25 ILRMS IDM TC = 25C Leads Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 170 160 500 A A A IA TC = 25C 85 A EAS TC = 25C 5 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 1250 W -55 ... +150 C 150 C -55 ... +150 C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force 300 260 °C °C 30..120 / 6.7..27 N/lb 10 g Weight G D S G = Gate S = Source Tab D = Drain Tab = Drain Features • Fast Intrinsic Diode • Avalanche Rated • Very Low Rth Results High Power Dissipation • Low RDS(ON) • Low Package Inductance Advantages • Low Gate Charge Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved Applications V 4.5 V 200 nA 25A 1.5 mA 18 m • DC-DC Coverters • Battery Chargers • Switched-Mode and Resonant-Mode Power Supplies • DC Choppers • AC and DC Motor Control • Uninterrupted Power Supplies • High Speed Power Switching Applications DS100000A(9/15) IXFB170N30P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 57 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID =0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd PLUS264TM (IXFB) Outline 95 S 20 nF 2450 pF 27 pF 41 ns 29 ns 79 ns 16 ns 258 nC 82 nC 78 nC 0.10C/W RthJC RthCS 0.13 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 170 A ISM Repetitive, Pulse Width Limited by TJM 500 A VSD IF = 85A, VGS = 0V, Note 1 1.3 V trr QRM IRM Note IF = 85A, -di/dt = 150A/μs 1.85 21 VR = 100V 200 ns C A 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB170N30P Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 300 180 VGS = 10V 8V 160 VGS = 10V 8V 250 7V 7V 120 I D - Amperes I D - Amperes 140 100 6V 80 60 200 150 6V 100 40 50 5V 5V 20 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 5 10 VDS - Volts 180 3.2 VGS = 10V 8V 140 VGS = 10V 2.8 7V RDS(on) - Normalized I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 160 15 VDS - Volts 120 6V 100 80 60 2.4 I D = 170A 2.0 I D = 85A 1.6 1.2 40 5V 0.8 20 0 0.4 0 1 2 3 4 5 6 -50 7 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 180 2.8 External Lead Current Limit VGS = 10V 160 TJ = 125ºC 140 I D - Amperes RDS(on) - Normalized 2.4 2.0 1.6 120 100 80 60 TJ = 25ºC 40 1.2 20 0.8 0 0 50 100 150 200 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFB170N30P Fig. 7. Input Admittance Fig. 8. Transconductance 180 200 160 180 160 140 25ºC g f s - Siemens 140 120 I D - Amperes TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 100 80 60 120 125ºC 100 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 80 VGS - Volts 100 120 140 160 180 200 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 350 VDS = 150V 9 300 I D = 85A 8 I G = 10mA 7 VGS - Volts I S - Amperes 250 200 150 5 4 3 TJ = 125ºC 100 6 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 80 VSD - Volts Fig. 11. Capacitance 160 200 240 280 Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 Ciss RDS(on) Limit 25µs 100 100µs 10,000 I D - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs Coss 1,000 10 1ms 1 10ms 100 Crss 100ms TJ = 150ºC 0.1 DC TC = 25ºC Single Pulse f = 1 MHz 10 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFB170N30P Fig. 12. Maximum Transient Thermal Impedance 1.000 Fig.13. Maximium Transient Thermal Impedance aaaa 0.200 Z(th)JC - ºC / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: F_170N30P(9S) 9-24-15-_A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.