IXFB300N10P

IXFB300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = =   100V 300A  5.5m 200ns PLUS264TM Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Maximum Ratings 100 100 V V VGSS Continuous 20 V VGSM Transient 30 V ID25 ILRMS IDM TC = 25C Leads Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 300 160 900 A A A IA EAS TC = 25C TC = 25C 100 3 A J dv/dt IS  IDM, VDD  VDSS, TJ  175C 20 V/ns PD TC = 25C 1500 W -55 ... +175 C 175 C -55 ... +175 C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force 300 260 °C °C 30..120/6.7..27 N/lb 10 g Weight G D S G = Gate S = Source Tab D = Drain Tab = Drain Features     Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Diode Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 100 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 50A, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved V 5.0 V 200 nA • DC-DC Coverters • Battery Chargers • Switch-Mode and Resonant-Mode Power Supplies • DC Choppers • AC and DC Motor Drives • Uninterrupted Power Supplies • High Speed Power Switching Applications 25A 1.5 mA 5.5 m DS100015A(02/14) IXFB300N10P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd PLUS264TM (IXFB) Outline 92 S 23 nF 6100 pF 417 pF 36 ns 35 ns 56 ns 25 ns 279 nC 84 nC 107 nC RthJC 1 - Gate 2,4 - Drain 3 - Source 0.10C/W RthCS 0.13 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr QRM IRM IF = 150A, -di/dt = 100A/μs Note 0.71 10 VR = 50V 300 A 1000 A 1.3 V 200 ns C A 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB300N10P Fig. 2. Output Characteristics @ TJ = 150ºC Fig. 1. Extended Output Characteristics @ TJ = 25ºC 350 300 VGS = 15V 10V 9V 300 VGS = 15V 10V 9V 250 8V I D - Amperes I D - Amperes 250 200 150 7V 200 8V 150 7V 100 6V 100 50 50 6V 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0.0 4.0 0.4 0.8 1.2 1.6 2.4 2.8 3.2 3.6 2.4 VGS = 10V 2.2 2.2 2.0 RDS(on) - Normalized 2.0 1.8 I D = 300A 1.6 I D = 150A 1.4 1.2 TJ = 175ºC 1.8 VGS = 10V 1.6 15V - - - - - 1.4 1.2 1.0 TJ = 25ºC 1.0 0.8 0.8 0.6 -50 -25 0 25 50 75 100 125 150 0 175 50 100 150 200 250 300 350 I D - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 200 180 180 160 External Lead Current Limit TJ = 150ºC 25ºC - 40ºC 160 140 140 120 I D - Amperes I D - Amperes 2.4 Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Drain Current Fig. 3. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature RDS(on) - Normalized 2.0 VDS - Volts VDS - Volts 100 80 60 120 100 80 60 40 40 20 20 0 0 -50 -25 0 25 50 75 100 TC - Degrees Centigrade © 2014 IXYS CORPORATION, All Rights Reserved 125 150 175 3.5 4.0 4.5 5.0 5.5 VGS - Volts 6.0 6.5 7.0 7.5 IXFB300N10P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. . Transconductance 180 350 TJ = - 40ºC 160 300 250 25ºC 120 100 I S - Amperes g f s - Siemens 140 150ºC 80 200 150 TJ = 150ºC 60 100 40 TJ = 25ºC 50 20 0 0 0 20 40 60 80 100 120 140 160 180 0.3 200 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 10. Capacitance Fig. 9. Gate Charge 100,000 10 f = 1 MHz VDS = 50V 9 Ciss I D = 150A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 10,000 6 5 4 3 2 Coss 1,000 1 C rss 0 100 0 40 80 120 160 200 240 280 0 5 10 QG - NanoCoulombs 15 20 25 30 35 40 VDS - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1,000 RDS(on) Limit 100 External Lead Limit Z(th)JC - ºC / W I D - Amperes 100µs 1ms 0.1 0.01 10 TJ = 175ºC 10ms TC = 25ºC Single Pulse DC 100ms 1 1 10 100 1000 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_300N10P(9S) 7-22-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.