IXFB40N110P

PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1100 1100 V V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 40 A IDM TC = 25°C, pulse width limited by TJM 100 A IAR TC = 25°C 20 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 1250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 30..120/6.7..27 N/lb. 10 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s FC Mounting force Weight G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Plus 264TM package for clip or spring mounting Space savings High power density Applications: z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z V 6.5 V ±200 nA 50 3 μA mA 260 mΩ z z TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99849B(03/08) IXFB40N110P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID =0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 32 S 19 nF 1070 pF 46 pF 1.65 Ω 53 ns 55 ns 110 ns 54 ns 310 nC 95 nC 142 nC RthJC 0.10 RthCS Symbol Test Conditions IS VGS = 0V ISM °C/W °C/W 0.13 Source-Drain Diode PLUS264TM (IXFB) Outline Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 40 A Repetitive, pulse width limited by TJM 160 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM 300 IF = 20A, -di/dt = 100A/μs VR = 100V, VGS = 0V ns μC A 2.2 16 Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB40N110P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 90 VGS = 10V 8V 35 70 ID - Amperes 30 ID - Amperes VGS = 10V 8V 80 7V 25 20 15 60 50 7V 40 30 6V 10 5 20 6V 10 5V 5V 0 0 0 1 2 3 4 5 6 7 8 0 9 5 10 40 25 30 3.0 VGS = 10V 7V 35 2.8 VGS = 10V 2.6 2.4 RDS(on) - Normalized 30 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 25 6V 20 15 10 2.2 2.0 I D = 40A 1.8 I D = 20A 1.6 1.4 1.2 1.0 0.8 5 5V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 45 2.8 VGS = 10V 2.6 40 TJ = 125ºC 2.4 35 2.2 ID - Amperes RDS(on) - Normalized 15 VDS - Volts VDS - Volts 2.0 1.8 1.6 30 25 20 15 1.4 10 1.2 TJ = 25ºC 5 1.0 0 0.8 0 10 20 30 40 50 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 60 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFB40N110P Fig. 7. Input Admittance 50 45 45 40 40 g f s - Siemens 55 50 35 ID - Amperes Fig. 8. Transconductance 55 TJ = 125ºC 25ºC - 40ºC 30 25 20 TJ = - 40ºC 25ºC 35 30 125ºC 25 20 15 15 10 10 5 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 5 10 VGS - Volts 20 25 30 35 40 45 50 55 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 120 110 VDS = 550V 14 I D = 20A 100 I G = 10mA 12 90 80 VGS - Volts IS - Amperes 15 70 60 50 40 10 8 6 TJ = 125ºC 30 4 TJ = 25ºC 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_40N110P(97) 03-28-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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