IXFB40N110Q3

IXFB40N110Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 = =  D RDS(on) S PLUS264TM 1100V 40A 260m G N-Channel Enhancement Mode Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25C to 150C 1100 V VDGR TJ = 25C to 150C, RGS = 1M 1100 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA G D S Maximum Ratings 40 A 100 A TC = 25C 40 A EAS TC = 25C 4 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 1560 W G = Gate S = Source TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 30..120/6.7..27 N/lb. 10 g    Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages  Weight D = Drain Tab = Drain Features  TJ TJM Tstg Tab   High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 6.5 V   DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 200 nA TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved 50 A 3 mA 260 m DS100580B(1/20) IXFB40N110Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 14 VDS = 20V, ID = 0.5 • ID25, Note 1 24 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf RG = 0.5 (External) Qg(on) Qgs 14 nF 984 pF 120 pF 0.18 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S   47 ns 68 ns 74 ns 26 ns 300 nC 95 nC 143 nC RthJC 0.08C/W RthCS 0.13 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 40 A Repetitive, Pulse Width Limited by TJM 160 A IF = IS, VGS = 0V, Note 1 1.4 V 434 4.1 18.8 IF = 20A, -di/dt = 100A/s VR = 100V, VGS = 0V ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB40N110Q3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 40 80 VGS = 10V 36 9V 70 32 8V 60 I D - Amperes 28 I D - Amperes VGS = 10V 24 20 7V 16 8V 50 40 7V 30 12 20 6V 8 6V 10 4 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 40 3.2 V GS = 10V 8V 36 20 VDS - Volts VDS - Volts VGS = 10V 2.8 32 I D - Amperes RDS(on) - Normalized 7V 28 24 20 16 6V 12 8 5V 2.4 2.0 I D = 40A 1.6 I D = 20A 1.2 0.8 4 4V 0 0.4 0 2.8 5 10 15 25 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 45 VGS = 10V 2.6 125 150 125 150 40 2.4 o TJ = 125 C 35 2.2 30 I D - Amperes RDS(on) - Normalized 20 2.0 1.8 1.6 25 20 15 1.4 o TJ = 25 C 1.2 10 5 1.0 0.8 0 0 10 20 30 40 50 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 60 70 80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFB40N110Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 40 50 o 45 TJ = - 40 C 35 40 30 o 30 o TJ = 125 C 25 o 25 C o - 40 C 20 25 C g f s - Siemens I D - Amperes 35 25 20 o 125 C 15 15 10 10 5 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 5 10 15 20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 35 40 45 50 360 400 440 Fig. 10. Gate Charge 140 16 120 14 VDS = 500V I D = 20A I G = 10mA 12 V GS - Volts 100 I S - Amperes 25 I D - Amperes 80 60 o TJ = 125 C 40 10 8 6 4 o TJ = 25 C 20 2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 80 120 VSD - Volts 160 200 240 280 320 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 f = 1 MHz RDS(on) Limit 1ms 100µs 25µs 100 10,000 I D - Amperes Capacitance - PicoFarads Ciss Coss 1,000 10 1 100 o TJ = 150 C C rss o TC = 25 C Single Pulse 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFB40N110Q3 Fig. 13. Maximum Transient Thermal Impedance Z (th )JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: IXF_40N110Q3(Q9) 02-25-14 IXFB40N110Q3 PLUS264TM (IXFB) Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFB40N110Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved