IXFB44N100Q3

Advance Technical Information IXFB44N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 44A Ω 220mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA 44 A 110 A TC = 25°C 44 A EAS TC = 25°C 4 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 1560 W G D S G = Gate S = Source -55 ... +150 150 -55 ... +150 °C °C °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C FC Mounting Force 30..120/6.7..27 N/lb. Weight 10 g D = Drain Tab = Drain Features z z TJ TJM Tstg Tab z z Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z High Power Density Easy to Mount Space Savings Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z V 6.5 V z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls ±200 nA TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 50 μA 3 mA 220 mΩ DS100307(03/11) IXFB44N100Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 26 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 43 S 13.6 nF 1046 pF 86 pF 0.12 Ω 48 ns 30 ns 66 ns 28 ns 264 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 0.5Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd PLUS264TM (IXFB) Outline 76 nC 110 nC 0.08 °C/W RthJC RthCS 0.13 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 22A, -di/dt = 100A/μs 2.1 16.2 VR = 100V, VGS = 0V 300 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB44N100Q3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 45 90 VGS = 10V 40 35 70 30 8V 60 ID - Amperes ID - Amperes VGS = 10V 9V 80 25 20 15 50 40 8V 30 10 20 7V 5 10 6V 0 0 1 2 3 4 5 6 7 7V 0 8 9 10 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 45 3.2 VGS = 10V 8V 40 VGS = 10V 2.8 R DS(on) - Normalized 35 ID - Amperes 30 25 7V 20 15 2.4 I D = 44A 2.0 I D = 22A 1.6 1.2 10 6V 5 0.8 5V 0 0 5 10 15 0.4 20 25 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 50 2.8 VGS = 10V 2.6 45 TJ = 125ºC 2.4 40 35 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.0 1.8 1.6 1.4 30 25 20 15 TJ = 25ºC 1.2 10 1.0 5 0 0.8 0 10 20 30 40 50 60 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFB44N100Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 70 80 60 70 60 50 25ºC g f s - Siemens ID - Amperes TJ = - 40ºC 40 TJ = 125ºC 25ºC 30 - 40ºC 20 50 40 125ºC 30 20 10 10 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 10 20 VGS - Volts 40 50 60 70 200 240 280 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 140 9 VDS = 500V 8 I G = 10mA I D = 22A 120 100 7 VGS - Volts IS - Amperes 30 80 60 TJ = 125ºC 6 5 4 3 40 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 VSD - Volts 80 120 160 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz RDS(on) Limit 1ms 100µs 25µs 100 ID - Amperes Capacitance - PicoFarads Ciss 10,000 Coss 1,000 100 10 1 TJ = 150ºC Crss TC = 25ºC Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFB44N100Q3 Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N100Q3(Q9)03-04-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.